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    SEMICONDUCTOR DEVICE
    1.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20100096613A1

    公开(公告)日：2010-04-22

    申请号：US12522744

    申请日：2007-01-11

    申请人： Takahiro Morikawa ,  Motoyasu Terao ,  Norikatsu Takaura ,  Kenzo Kurotsuchi ,  Nozomu Matsuzaki ,  Yoshihisa Fujisaki ,  Masaharu Kinoshita ,  Yuichi Matsui

    发明人： Takahiro Morikawa ,  Motoyasu Terao ,  Norikatsu Takaura ,  Kenzo Kurotsuchi ,  Nozomu Matsuzaki ,  Yoshihisa Fujisaki ,  Masaharu Kinoshita ,  Yuichi Matsui

    IPC分类号： H01L45/00 ,  H01L21/02

    CPC分类号： H01L45/144 ,  H01L27/2436 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/1675

    摘要： A phase change memory is formed of a plug buried within a through-hole in an insulating film formed on a semiconductor substrate, an interface layer formed on the insulating film in which the plug is buried, a recording layer formed of a chalcogenide layer formed on the interface layer, and an upper contact electrode formed on the recording layer. The recording layer storing information according to resistance value change is made of chalcogenide material containing indium in an amount range from 20 atomic % to 38 atomic %, germanium in a range from 9 atomic % to 28 atomic %, antimony in a range from 3 atomic % to 18 atomic %, and tellurium in a range from 42 atomic % to 63 atomic %, where the content of germanium larger than or equal to the content of antimony.

    摘要翻译： 相变存储器由形成在半导体衬底上的绝缘膜中的埋入通孔内的插塞形成，形成在绝缘膜上的界面层，其中埋入插塞，由硫化物层形成的记录层形成在 界面层和形成在记录层上的上接触电极。 根据电阻值变化存储信息的记录层由含有20原子％至38原子％的量的铟的含量为9原子％至28原子％的锗的硫属化物材料制成，3原子级的锑 ％〜18原子％，碲为42原子％〜63原子％，锗的含量大于或等于锑的含量。

    Semiconductor device
    3.
    发明授权
    Semiconductor device 失效
    半导体器件

    公开(公告)号：US08618523B2

    公开(公告)日：2013-12-31

    申请号：US12302740

    申请日：2006-05-31

    申请人： Norikatsu Takaura ,  Yuichi Matsui ,  Motoyasu Terao ,  Yoshihisa Fujisaki ,  Nozomu Matsuzaki ,  Kenzo Kurotsuchi ,  Takahiro Morikawa

    发明人： Norikatsu Takaura ,  Yuichi Matsui ,  Motoyasu Terao ,  Yoshihisa Fujisaki ,  Nozomu Matsuzaki ,  Kenzo Kurotsuchi ,  Takahiro Morikawa

    IPC分类号： H01L47/00

    CPC分类号： G11C13/0004 ,  G11C8/08 ,  G11C13/0028 ,  G11C2213/79 ,  H01L27/2436 ,  H01L45/06 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/144 ,  H01L45/1625 ,  H01L45/1675

    摘要： On an insulating film (41) in which a plug (43) as a lower electrode is embedded, a laminated layer pattern of an insulating film (51) made of tantalum oxide, a recording layer (52) made of Ge—Sb—Te based chalcogenide to which indium is introduced and an upper electrode film (53) made of tungsten or tungsten alloy is formed, thereby forming a phase change memory. By interposing the insulating film (51) between the recording layer (52) and the plug (43), an effect of reducing programming current of a phase change memory and an effect of preventing peeling of the recording layer (52) can be achieved. Further, by using the Ge—Sb—Te based chalcogenide to which indium is introduced as the recording layer (52), the difference in work function between the insulating film (51) and the recording layer (52) is increased, and the programming voltage of the phase change memory can be reduced.

    摘要翻译： 在嵌入作为下电极的插头（43）的绝缘膜（41）上，由氧化钽构成的绝缘膜（51）的叠层图案，由Ge-Sb-Te制成的记录层（52） 引入铟的硫属化合物和由钨或钨合金制成的上电极膜（53），从而形成相变存储器。 通过将绝缘膜（51）插入在记录层（52）和插塞（43）之间，可以实现降低相变存储器的编程电流的效果和防止记录层（52）的剥离的效果。 此外，通过使用引入了铟的Ge-Sb-Te类硫族化物作为记录层（52），绝缘膜（51）和记录层（52）之间的功函数差增大，编程 可以减小相变存储器的电压。

    SEMICONDUCTOR DEVIC
    5.
    发明申请
    SEMICONDUCTOR DEVIC 失效
    半导体器件

    公开(公告)号：US20100012917A1

    公开(公告)日：2010-01-21

    申请号：US12302740

    申请日：2006-05-31

    申请人： Norikatsu Takaura ,  Yuichi Matsui ,  Motoyasu Terao ,  Yoshihisa Fujisaki ,  Nozomu Matsuzaki ,  Kenzo Kurotsuchi ,  Takahiro Morikawa

    发明人： Norikatsu Takaura ,  Yuichi Matsui ,  Motoyasu Terao ,  Yoshihisa Fujisaki ,  Nozomu Matsuzaki ,  Kenzo Kurotsuchi ,  Takahiro Morikawa

    IPC分类号： H01L47/00

    CPC分类号： G11C13/0004 ,  G11C8/08 ,  G11C13/0028 ,  G11C2213/79 ,  H01L27/2436 ,  H01L45/06 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/144 ,  H01L45/1625 ,  H01L45/1675

    摘要： On an insulating film (41) in which a plug (43) as a lower electrode is embedded, a laminated layer pattern of an insulating film (51) made of tantalum oxide, a recording layer (52) made of Ge—Sb—Te based chalcogenide to which indium is introduced and an upper electrode film (53) made of tungsten or tungsten alloy is formed, thereby forming a phase change memory. By interposing the insulating film (51) between the recording layer (52) and the plug (43), an effect of reducing programming current of a phase change memory and an effect of preventing peeling of the recording layer (52) can be achieved. Further, by using the Ge—Sb—Te based chalcogenide to which indium is introduced as the recording layer (52), the difference in work function between the insulating film (51) and the recording layer (52) is increased, and the programming voltage of the phase change memory can be reduced.

    摘要翻译： 在嵌入作为下电极的插头（43）的绝缘膜（41）上，由氧化钽构成的绝缘膜（51）的叠层图案，由Ge-Sb-Te制成的记录层（52） 引入铟的硫属化合物和由钨或钨合金制成的上电极膜（53），从而形成相变存储器。 通过将绝缘膜（51）插入在记录层（52）和插塞（43）之间，可以实现降低相变存储器的编程电流的效果和防止记录层（52）的剥离的效果。 此外，通过使用引入了铟的Ge-Sb-Te类硫族化物作为记录层（52），绝缘膜（51）和记录层（52）之间的功函数差增大，编程 可以减小相变存储器的电压。

    SEMICONDUCTOR DEVICE
    6.
    发明申请
    SEMICONDUCTOR DEVICE 失效
    半导体器件

    公开(公告)号：US20100072451A1

    公开(公告)日：2010-03-25

    申请号：US12373185

    申请日：2006-07-21

    申请人： Motoyasu Terao ,  Satoru Hanzawa ,  Takahiro Morikawa ,  Kenzo Kurotsuchi ,  Riichiro Takemura ,  Norikatsu Takaura ,  Nozomu Matsuzaki

    发明人： Motoyasu Terao ,  Satoru Hanzawa ,  Takahiro Morikawa ,  Kenzo Kurotsuchi ,  Riichiro Takemura ,  Norikatsu Takaura ,  Nozomu Matsuzaki

    IPC分类号： H01L45/00 ,  H01L27/04

    CPC分类号： G11C13/0004 ,  G11C2213/79 ,  H01L27/2436 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/144 ,  H01L45/1625 ,  H01L45/1675

    摘要： A recording layer 52 made of a chalcogenide material which stores a high-resistance state of a high electrical resistance value and a low-resistance state of a low electrical resistance value is used as a memory element RM in a memory cell region, and it is formed so that a concentration of Ga or In of a first layer 52a positioned on a lower electrode TP side of the recording layer 52 is higher than the corresponding concentration of a second layer 52b positioned on an upper electrode 53 side. For example, the recording layer is formed so that a content of Ga or In of the second layer is 5 atomic % or more smaller than that of the first layer. Also, a circuit which can reverse the voltage polarity between the upper electrode and the lower electrode in a set operation and a reset operation is provided.

    摘要翻译： 作为存储单元区域中的存储元件RM，使用由存储高电阻值的高电阻状态和低电阻值的低电阻状态的硫族化物材料制成的记录层52， 使得位于记录层52的下电极TP侧的第一层52a中的Ga或In的浓度高于位于上电极53侧的第二层52b的相应浓度。 例如，记录层形成为使得第二层中的Ga或In的含量比第一层的含量低5原子％以上。 此外，提供了在设定操作和复位操作中可以反转上电极和下电极之间的电压极性的电路。

    Semiconductor device
    7.
    发明授权
    Semiconductor device 失效
    半导体器件

    公开(公告)号：US08319204B2

    公开(公告)日：2012-11-27

    申请号：US12373185

    申请日：2006-07-21

    申请人： Motoyasu Terao ,  Satoru Hanzawa ,  Takahiro Morikawa ,  Kenzo Kurotsuchi ,  Riichiro Takemura ,  Norikatsu Takaura ,  Nozomu Matsuzaki

    发明人： Motoyasu Terao ,  Satoru Hanzawa ,  Takahiro Morikawa ,  Kenzo Kurotsuchi ,  Riichiro Takemura ,  Norikatsu Takaura ,  Nozomu Matsuzaki

    IPC分类号： H01L45/00 ,  H01L27/04

    CPC分类号： G11C13/0004 ,  G11C2213/79 ,  H01L27/2436 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/144 ,  H01L45/1625 ,  H01L45/1675

    摘要： A recording layer 52 made of a chalcogenide material which stores a high-resistance state of a high electrical resistance value and a low-resistance state of a low electrical resistance value is used as a memory element RM in a memory cell region, and it is formed so that a concentration of Ga or In of a first layer 52a positioned on a lower electrode TP side of the recording layer 52 is higher than the corresponding concentration of a second layer 52b positioned on an upper electrode 53 side. For example, the recording layer is formed so that a content of Ga or In of the second layer is 5 atomic % or more smaller than that of the first layer. Also, a circuit which can reverse the voltage polarity between the upper electrode and the lower electrode in a set operation and a reset operation is provided.

    摘要翻译： 作为存储单元区域中的存储元件RM，使用由存储高电阻值的高电阻状态和低电阻值的低电阻状态的硫族化物材料制成的记录层52， 使得位于记录层52的下电极TP侧的第一层52a中的Ga或In的浓度高于位于上电极53侧的第二层52b的相应浓度。 例如，记录层形成为使得第二层中的Ga或In的含量比第一层的含量低5原子％以上。 此外，提供了在设定操作和复位操作中可以反转上电极和下电极之间的电压极性的电路。

    Semiconductor integrated circuit device and method of manufacturing the same
    9.
    发明申请
    Semiconductor integrated circuit device and method of manufacturing the same 有权
    半导体集成电路器件及其制造方法

    公开(公告)号：US20060113520A1

    公开(公告)日：2006-06-01

    申请号：US11289410

    申请日：2005-11-30

    申请人： Naoki Yamamoto ,  Norikatsu Takaura ,  Yuichi Matsui ,  Nozomu Matsuzaki ,  Kenzo Kurotsuchi ,  Motoyasu Terao

    发明人： Naoki Yamamoto ,  Norikatsu Takaura ,  Yuichi Matsui ,  Nozomu Matsuzaki ,  Kenzo Kurotsuchi ,  Motoyasu Terao

    IPC分类号： H01L29/04

    CPC分类号： H01L45/06 ,  H01L27/2436 ,  H01L45/122 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/144 ,  H01L45/1625 ,  H01L45/1641 ,  H01L45/165

    摘要： Disclosed herein is a phase change memory semiconductor integrated circuit device using a chalcogenide film that solves a problem that the operation temperature capable of ensuring long time memory retention is low due to low phase change temperature is and, at the same time, a problem that power consumption of the device is high since a large current requires to rewrite memory information due to low resistance. A portion of constituent elements for a chalcogenide comprises nitride, oxide or carbide which are formed to the boundary between the chalcogenide film and a metal plug as an underlying electrode and to the grain boundary of chalcogenide crystals thereby increasing the phase change temperature and high Joule heat can be generated even by a small current by increasing the resistance of the film.

    摘要翻译： 这里公开了一种使用硫族化物膜的相变存储器半导体集成电路器件，其解决了由于相变温度低导致能够确保长时间存储保持的操作温度低的问题，并且同时存在功率 器件的消耗很高，因为大电流需要由于低电阻而重写存储器信息。 硫族化物的一部分组成元素包括氮化物，氧化物或碳化物，其形成于作为下伏电极的硫族化物膜和金属栓之间的边界以及硫族化物晶体的晶界上，从而增加相变温度和高焦耳热 即使通过增加膜的电阻也能通过小的电流产生。