发明授权
- 专利标题: Methods and systems for processing a microelectronic topography
- 专利标题(中): 用于处理微电子拓扑的方法和系统
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申请号: US11108589申请日: 2005-04-18
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公开(公告)号: US08003159B2公开(公告)日: 2011-08-23
- 发明人: Igor C. Ivanov , Weiguo Zhang
- 申请人: Igor C. Ivanov , Weiguo Zhang
- 申请人地址: US CA Fremont
- 专利权人: Lam Research Corporation
- 当前专利权人: Lam Research Corporation
- 当前专利权人地址: US CA Fremont
- 代理机构: Daffer McDaniel, LLP
- 代理商 Kevin L. Daffer; Mollie E. Lettang
- 主分类号: B05D3/04
- IPC分类号: B05D3/04
摘要:
Methods and systems are provided which are adapted to process a microelectronic topography, particularly in association with an electroless deposition process. In general, the methods may include loading the topography into a chamber, closing the chamber to form an enclosed area, and supplying fluids to the enclosed area. In some embodiments, the fluids may fill the enclosed area. In addition or alternatively, a second enclosed area may be formed about the topography. As such, the provided system may be adapted to form different enclosed areas about a substrate holder. In some cases, the method may include agitating a solution to minimize the accumulation of bubbles upon a wafer during an electroless deposition process. As such, the system provided herein may include a means for agitating a solution in some embodiments. Such a means for agitation may be distinct from the inlet/s used to supply the solution to the chamber.