公开(公告)号：US08502381B2

公开(公告)日：2013-08-06

申请号：US13013187

申请日：2011-01-25

申请人： Igor C. Ivanov

发明人： Igor C. Ivanov

IPC分类号： H01L23/52 ,  H01L23/48 ,  H01L29/40

CPC分类号： H01L21/76841 ,  B82Y30/00 ,  C23C18/1619 ,  C23C18/1651 ,  C23C18/1682 ,  C23C18/1683 ,  C25D5/08 ,  C25D7/12 ,  C25D17/001 ,  C25D21/10 ,  H01L21/288 ,  H01L21/6715 ,  H01L21/76801 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76834 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76858 ,  H01L21/76864 ,  H01L21/76867 ,  H01L21/76877 ,  H01L23/53238 ,  H01L2924/0002 ,  Y10T428/12 ,  Y10T428/12458 ,  Y10T428/24479 ,  Y10T428/24612 ,  H01L2924/00

摘要： A microelectronic topography includes a dielectric layer (DL) with a surface higher than an adjacent bulk metal feature (BMF) and further includes a barrier layer (BL) upon the BMF and extending higher than the DL. Another microelectronic topography includes a BL with a metal-oxide layer having a metal element concentration which is disproportionate relative to concentrations of the element within metal alloy layers on either side of the metal-oxide layer. A method includes forming a BL upon a BMF such that portions of a first DL adjacent to the BMF are exposed, selectively depositing a second DL upon the BL, cleaning the topography thereafter, and blanket depositing a third DL upon the cleaned topography. Another method includes polishing a microelectronic topography such that a metallization layer is coplanar with a DL and further includes spraying a deionized water based fluid upon the polished topography to remove debris from the DL.

摘要翻译： 微电子拓扑结构包括具有高于相邻体金属特征（BMF）的表面的介电层（DL），并且还包括在BMF上的延伸高于DL的阻挡层（BL）。 另一微电子拓扑包括具有金属元素浓度的金属氧化物层的BL，其相对于在金属氧化物层的任一侧上的金属合金层内的元素的浓度是不成比例的。 一种方法包括在BMF上形成BL，使得与BMF相邻的第一DL的部分被暴露，在BL上选择性地沉积第二DL，然后清洁其形貌，以及在清洁的形貌上覆盖沉积第三DL。 另一种方法包括抛光微电子拓扑，使得金属化层与DL共面，并且还包括在抛光的形貌上喷射去离子水基流体以从DL去除碎屑。

公开(公告)号：US07897507B2

公开(公告)日：2011-03-01

申请号：US12719167

申请日：2010-03-08

申请人： Igor C. Ivanov

发明人： Igor C. Ivanov

IPC分类号： H01L21/4763

CPC分类号： H01L21/76841 ,  B82Y30/00 ,  C23C18/1619 ,  C23C18/1651 ,  C23C18/1682 ,  C23C18/1683 ,  C25D5/08 ,  C25D7/12 ,  C25D17/001 ,  C25D21/10 ,  H01L21/288 ,  H01L21/6715 ,  H01L21/76801 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76834 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76858 ,  H01L21/76864 ,  H01L21/76867 ,  H01L21/76877 ,  H01L23/53238 ,  H01L2924/0002 ,  Y10T428/12 ,  Y10T428/12458 ,  Y10T428/24479 ,  Y10T428/24612 ,  H01L2924/00

摘要： A microelectronic topography includes a dielectric layer (DL) with a surface higher than an adjacent bulk metal feature (BMF) and further includes a barrier layer (BL) upon the BMF and extending higher than the DL. Another microelectronic topography includes a BL with a metal-oxide layer having a metal element concentration which is disproportionate relative to concentrations of the element within metal alloy layers on either side of the metal-oxide layer. A method includes forming a BL upon a BMF such that portions of a first DL adjacent to the BMF are exposed, selectively depositing a second DL upon the BL, cleaning the topography thereafter, and blanket depositing a third DL upon the cleaned topography. Another method includes polishing a microelectronic topography such that a metallization layer is coplanar with a DL and further includes spraying a deionized water based fluid upon the polished topography to remove debris from the DL.

摘要翻译： 微电子拓扑结构包括具有高于相邻体金属特征（BMF）的表面的介电层（DL），并且还包括在BMF上的延伸高于DL的阻挡层（BL）。 另一微电子拓扑包括具有金属元素浓度的金属氧化物层的BL，其相对于在金属氧化物层的任一侧上的金属合金层内的元素的浓度是不成比例的。 一种方法包括在BMF上形成BL，使得与BMF相邻的第一DL的部分被暴露，在BL上选择性地沉积第二DL，然后清洁其形貌，以及在清洁的形貌上覆盖沉积第三DL。 另一种方法包括抛光微电子拓扑，使得金属化层与DL共面，并且还包括在抛光的形貌上喷射去离子水基流体以从DL去除碎屑。

公开(公告)号：US20100055300A1

公开(公告)日：2010-03-04

申请号：US12616367

申请日：2009-11-11

申请人： Igor C. Ivanov

发明人： Igor C. Ivanov

IPC分类号： B05D5/12

CPC分类号： H01L21/76841 ,  B82Y30/00 ,  C23C18/1619 ,  C23C18/1651 ,  C23C18/1682 ,  C23C18/1683 ,  C25D5/08 ,  C25D7/12 ,  C25D17/001 ,  C25D21/10 ,  H01L21/288 ,  H01L21/6715 ,  H01L21/76801 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76834 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76858 ,  H01L21/76864 ,  H01L21/76867 ,  H01L21/76877 ,  H01L23/53238 ,  H01L2924/0002 ,  Y10T428/12 ,  Y10T428/12458 ,  Y10T428/24479 ,  Y10T428/24612 ,  H01L2924/00

摘要： An apparatus for processing microelectronic topographies, a method of use of such an apparatus, and a method for passivating hardware of microelectronic processing chambers are provided. The apparatus includes a substrate holder configured to support a microelectronic topography and a rotatable case with sidewalls arranged on opposing sides of the substrate holder. The method of using such an apparatus includes positioning a microelectronic topography upon a substrate holder of a processing chamber, exposing the microelectronic topography to a fluid within the processing chamber, and rotating a case of the processing chamber. The rotation is sufficient to affect movement of the fluid relative to the surface of the microelectronic topography. A method for passivating hardware of a microelectronic processing chamber includes exposing the hardware to an organic compound and subsequently exposing the hardware to an agent configured to form polar bonds with the organic compound.

摘要翻译： 提供了一种用于处理微电子拓扑的装置，这种装置的使用方法以及用于钝化微电子处理室的硬件的方法。 该装置包括：衬底保持器，其构造成支撑微电子形貌;以及旋转壳体，其具有布置在衬底保持器的相对侧上的侧壁。 使用这种装置的方法包括将微电子形貌定位在处理室的衬底保持器上，将微电子拓扑暴露于处理室内的流体，以及旋转处理室的壳体。 旋转足以影响流体相对于微电子拓扑的表面的运动。 用于钝化微电子处理室的硬件的方法包括将硬件暴露于有机化合物，随后将硬件暴露于配置为与有机化合物形成极性键的试剂。

公开(公告)号：US07235483B2

公开(公告)日：2007-06-26

申请号：US10299070

申请日：2002-11-19

申请人： Igor C. Ivanov

发明人： Igor C. Ivanov

IPC分类号： H01L21/44

CPC分类号： C23C18/1651 ,  C23C18/168 ,  H01L21/288

摘要： The method of the invention comprises accumulating experimental data or obtaining existing data with regard to the optimal time-temperature relationship of the deposition process on various film-formation stages for various materials, forming nuclei of a selected material on the surface of the treated object in the first stage under first temperature-controlled conditions for the formation of nuclei of said selected material, converting the nuclei of the aforementioned selected material into island-structured deposited layer of said material by causing lateral growth of the nuclei under second temperature-controlled conditions; converting the island-structure layer into a continuously interconnected cluster structure by causing further lateral growth of said island-structured deposited layer under third temperature-controlled conditions; forming a first continuous film of said material under fourth temperature controlled conditions which provides said first continuous film with predetermined properties; and then completing the formation of a final coating film by growing at least one subsequent continuous film of said material under fifth temperature-controlled conditions until a film of a predetermined thickness is obtained. The fifth temperature-controlled conditions may be characterized by a pulse-mode or step-like variations of temperature in time with rapid cooling or heating for obtaining high degree of crystallinity or for increase in the rate of deposition. The method of the invention could be realized with the use of the electroless deposition apparatus with instantaneous cooling or heating of the object, e.g., a semiconductor substrate, in a deposition chamber.

摘要翻译： 本发明的方法包括累积实验数据或获得关于各种材料的各种成膜阶段的沉积过程的最佳时间 - 温度关系的现有数据，在被处理物体的表面上形成选定材料的核 在用于形成所述选定材料的核的第一温度控制条件下的第一阶段，通过在第二温度控制条件下引起核的横向生长，将上述选择的材料的核转化成所述材料的岛状沉积层; 通过在第三温度控制条件下进一步横向生长所述岛状沉积层，将岛状结构层转化为连续互连的簇结构; 在第四温度控制条件下形成所述材料的第一连续膜，其提供具有预定特性的所述第一连续膜; 然后通过在第五温度控制条件下生长所述材料的至少一个随后的连续膜直到获得预定厚度的膜来完成最终涂膜的形成。 第五温度控制条件的特征可以在于快速冷却或加热以获得高结晶度或者提高沉积速率的时间上的脉冲模式或阶梯状的温度变化。 本发明的方法可以通过在沉积室中使用具有瞬间冷却或加热物体（例如半导体衬底）的无电沉积设备来实现。

公开(公告)号：US06935638B2

公开(公告)日：2005-08-30

申请号：US10369878

申请日：2003-02-21

申请人： Igor C. Ivanov ,  Jonathan Weiguo Zhang

发明人： Igor C. Ivanov ,  Jonathan Weiguo Zhang

IPC分类号： B23B31/14 ,  B23B31/18 ,  H01L21/00 ,  H01L21/687 ,  B23B31/103

CPC分类号： H01L21/67126 ,  B23B31/14 ,  B23B31/18 ,  H01L21/68707 ,  H01L21/68728 ,  Y10T279/18 ,  Y10T279/24 ,  Y10T279/247

摘要： A universal substrate holder of the invention for treating wafer substrates in liquids is provided with a shaft and a rod slidingly inserted into the central opening of the shaft. The end of the shaft that protrudes into the bowl supports a base platform for the substrate, while the end of the rod that protrudes into the bowl has radial arms that rigidly support an annular plate with pins that can pass through the opening of the base platform so that they can support the substrate above the surface of the platform. The annular plate supports clamping jaws made in the form of two-arm levers with shorter arms and longer arms. The longer arms are heavier and therefore in the stationary state of the holder keep the jaws turned into an open position. When the shaft begins to rotate, the jaws are turned under the effect of centrifugal forces into positions of clamping the substrate with the shorter arms. When the rod is pulled down, the ends of the longer arms come into contact with the base platform and are turned into the clamping position. The substrate holder of the invention allows clamping and releasing of the substrate in positions of the substrate above the platform and in a position of the substrate on the base substrate, when the backside of the substrate is inaccessible to the process liquid.

摘要翻译： 用于处理液体中的晶片基板的本发明的通用基板保持器设置有滑动地插入轴的中心开口中的轴和杆。 突出到碗中的轴的端部支撑用于基底的基座，而突出到碗中的杆的端部具有径向臂，其刚性地支撑环形板，销可以穿过基座的开口 使得它们可以支撑平台表面上方的基板。 环形板支撑以双臂杠杆的形式制成的夹爪，其具有较短的臂和较长的臂。 较长的手臂较重，因此在保持架的静止状态下，保持夹爪变为打开位置。 当轴开始旋转时，夹爪在离心力的作用下转动到用较短的臂夹持基板的位置。 当杆被拉下时，较长臂的端部与基座平台接触并转动到夹紧位置。 本发明的衬底保持器允许当衬底的背面不可用于处理液体时，衬底在平台上方的位置和衬底在基底衬底上的位置的夹持和释放。

公开(公告)号：US06908512B2

公开(公告)日：2005-06-21

申请号：US10247895

申请日：2002-09-20

申请人： Igor C. Ivanov ,  Jonathan Weiguo Zhang ,  Artur Kolics

发明人： Igor C. Ivanov ,  Jonathan Weiguo Zhang ,  Artur Kolics

IPC分类号： B24B37/30 ,  B24B49/14 ,  C23C18/16 ,  H01L21/00 ,  H01L21/288 ,  H01L21/687 ,  G05C13/00

CPC分类号： C23C18/163 ,  B24B37/30 ,  B24B49/14 ,  C23C18/1678 ,  H01L21/288 ,  H01L21/2885 ,  H01L21/67248 ,  H01L21/68785

摘要： A substrate holder has a disk-like body with a central recess having diameter smaller than the diameter of the substrate placed onto the upper surface of the holder. The substrate can be clamped in place by the clamps of the edge-grip mechanism or placed into a seat without the use of clamps. In both cases, the substrate forms a partial wall that confines the heating/cooling recess or chamber. The aforementioned recess is filled with a cooling or heating liquid (depending on the mode of metal deposition) selectively supplied from a liquid heating or cooling system. In order to ensure in the working chamber above the substrate a pressure slightly higher than the pressure in the cooling/heating recess, the working chamber is first filled with the working solution under the atmospheric pressure, and then the recess is filled with a heating or cooling liquid with simultaneous increase of pressure in the working chamber to a level slightly exceeding the pressure in the recess. The substrate holder of the invention provides direct heat/cool-exchange between the heating/cooling medium and the substrate and allows instantaneous change of temperature of the heating/cooling liquid.

摘要翻译： 衬底保持器具有盘状体，其具有直径小于放置在保持器的上表面上的衬底的直径的中心凹部。 基板可以通过边缘抓握机构的夹具夹紧就位，或者不使用夹具而放置在座中。 在这两种情况下，基板形成限制加热/冷却凹部或室的局部壁。 上述凹部填充有从液体加热或冷却系统选择性地供应的冷却或加热液体（取决于金属沉积的模式）。 为了确保在基板上方的工作室内的压力略高于冷却/加热凹槽中的压力，工作室首先在大气压力下被工作溶液填充，然后用加热或 冷却液体，同时将工作室中的压力提高到稍微超过凹部中的压力的​​水平。 本发明的衬底保持器在加热/冷却介质和衬底之间提供直接的热/冷交换，并且允许加热/冷却液体的温度的瞬时变化。

公开(公告)号：US08906446B2

公开(公告)日：2014-12-09

申请号：US13408039

申请日：2012-02-29

申请人： Igor C. Ivanov ,  Jonathan Weiguo Zhang ,  Artur Kolics

发明人： Igor C. Ivanov ,  Jonathan Weiguo Zhang ,  Artur Kolics

IPC分类号： C23C18/16 ,  H01L21/288

CPC分类号： C23C18/1676 ,  C23C18/1628 ,  C23C18/163 ,  C23C18/1632 ,  C23C18/168 ,  C23C18/1682 ,  H01L21/288

摘要： An apparatus is provided having a closable chamber that can be sealed and is capable of withstanding an increased pressure and high temperature. The chamber has several inlet ports for the supply of various process liquids, such as deposition solutions, DI water for rinsing, etc., and a port for the supply of a gas under pressure. The apparatus also includes a solution heater and a control system for controlling temperature and pressure in the chamber. Uniform deposition is achieved by carrying out the deposition process under pressure and under temperature slightly below the boiling point of the solution. The solution can be supplied from above via a shower head formed in the cover, or through the bottom of the chamber. Rinsing or other auxiliary solutions are supplied via a radially moveable chemical dispensing arm that can be arranged above the substrate parallel thereto.

摘要翻译： 提供一种装置，其具有能够被密封并且能够承受增加的压力和高温的可关闭室。 该室具有用于供应各种处理液体的多个入口，例如沉积溶液，用于冲洗的去离子水等，以及用于在压力下供应气体的端口。 该装置还包括解决方案加热器和用于控制室内的温度和压力的控制系统。 通过在压力下和稍低于溶液沸点的温度下进行沉积工艺来实现均匀沉积。 该解决方案可以从上面通过形成在盖中的淋浴喷头或者通过室的底部供应。 冲洗或其它辅助溶液经由可平行于其上的衬底上方的可径向移动的化学分配臂供应。

公开(公告)号：US08586133B2

公开(公告)日：2013-11-19

申请号：US13540036

申请日：2012-07-02

申请人： Igor C. Ivanov ,  Weiguo Zhang ,  Artur Kolics

发明人： Igor C. Ivanov ,  Weiguo Zhang ,  Artur Kolics

IPC分类号： C23C20/02 ,  C23C20/04 ,  H01L21/28 ,  H01L21/288

CPC分类号： H01L21/64 ,  C23C8/02 ,  C23C18/1605 ,  C23C18/1632 ,  C23C18/1683 ,  C23C18/1803 ,  C23C28/00 ,  C23C28/321 ,  C23C28/322 ,  C23C28/34 ,  C23C28/345 ,  C23C28/3455 ,  H01L21/288 ,  H01L21/321 ,  H01L21/76843 ,  H01L21/76849 ,  H01L21/76855 ,  H01L21/76856 ,  H01L21/76864 ,  H01L21/76874 ,  Y10T428/1241 ,  Y10T428/12493 ,  Y10T428/12549 ,  Y10T428/23 ,  Y10T428/24628

摘要： A method is provided which includes forming a metal layer and converting at least a portion of the metal layer to a hydrated metal oxide layer. Another method is provided which includes selectively depositing a dielectric layer upon another dielectric layer and selectively depositing a metal layer adjacent to the dielectric layer. Consequently, a microelectronic topography is formed which includes a metal feature and an adjacent dielectric portion comprising lower and upper layers of hydrophilic and hydrophobic material, respectively. A topography including a metal feature having a single layer with at least four elements lining a lower surface and sidewalls of the metal feature is also provided herein. The fluid/s used to form such a single layer may be analyzed by test equipment configured to measure the concentration of all four elements. In some cases, the composition of the fluid/s may be adjusted based upon the analysis.

摘要翻译： 提供了一种方法，其包括形成金属层并将金属层的至少一部分转化为水合金属氧化物层。 提供了另一种方法，其包括在另一电介质层上选择性地沉积电介质层并且选择性地沉积与电介质层相邻的金属层。 因此，形成微电子拓扑，其包括分别包括亲水和疏水材料的下层和上层的金属特征和相邻电介质部分。 本文还提供了包括具有单层的金属特征的地形，其中至少四个元件衬在下表面和金属特征的侧壁。 用于形成这种单层的流体可以通过配置成测量所有四个元素的浓度的测试设备进行分析。 在一些情况下，可以基于分析来调整流体的组成。

公开(公告)号：US08128987B2

公开(公告)日：2012-03-06

申请号：US11138531

申请日：2005-05-26

申请人： Igor C. Ivanov ,  Jonathan Weiguo Zhang ,  Artur Kolics

发明人： Igor C. Ivanov ,  Jonathan Weiguo Zhang ,  Artur Kolics

IPC分类号： C23C18/16

CPC分类号： C23C18/1676 ,  C23C18/1628 ,  C23C18/163 ,  C23C18/1632 ,  C23C18/168 ,  C23C18/1682 ,  H01L21/288

摘要： A method for electroless deposition from a deposition solution in a working chamber, where the process can include heating the deposition solution to its boiling point and subsequently reducing the temperature of the deposition solution to a working temperature range that is between approximately 1% and approximately 25% below the boiling point of said solution under a predetermined pressure; and the process also can include heating the deposition solution while filling an enclosed area of the chamber such that the deposition solution reaches its boiling point immediately after the enclosed area is filled.

摘要翻译： 一种用于从工作室中的沉积溶液进行无电沉积的方法，其中该方法可以包括将沉积溶液加热至其沸点，随后将沉积溶液的温度降低至大约1％至大约25之间的工作温度范围 低于所述溶液在预定压力下的沸点％; 并且该方法还可以包括在填充室的封闭区域期间加热沉积溶液，使得沉积溶液在填充封闭区域之后立即达到其沸点。

公开(公告)号：US20110271905A1

公开(公告)日：2011-11-10

申请号：US13185638

申请日：2011-07-19

申请人： Igor C. Ivanov ,  Weiguo Zhang

发明人： Igor C. Ivanov ,  Weiguo Zhang

IPC分类号： B05C11/00

CPC分类号： H01L21/68728 ,  H01L21/67051 ,  H01L21/6708 ,  Y02P80/30

摘要： Methods and systems are provided which are adapted to process a microelectronic topography, particularly in association with an electroless deposition process. In general, the methods may include loading the topography into a chamber, closing the chamber to form an enclosed area, and supplying fluids to the enclosed area. In some embodiments, the fluids may fill the enclosed area. In addition or alternatively, a second enclosed area may be formed about the topography. As such, the provided system may be adapted to form different enclosed areas about a substrate holder. In some cases, the method may include agitating a solution to minimize the accumulation of bubbles upon a wafer during an electroless deposition process. As such, the system provided herein may include a means for agitating a solution in some embodiments. Such a means for agitation may be distinct from the inlet/s used to supply the solution to the chamber.

摘要翻译： 提供了适于处理微电子拓扑的方法和系统，特别是与无电沉积工艺相关联。 通常，方法可以包括将形貌加载到腔室中，关闭腔室以形成封闭区域，并将流体供应到封闭区域。 在一些实施例中，流体可以填充封闭区域。 另外或替代地，围绕地形可以形成第二封闭区域。 因此，所提供的系统可以适于在基板保持器周围形成不同的封闭区域。 在一些情况下，该方法可以包括搅拌溶液以在无电沉积工艺期间使气泡在晶片上的累积最小化。 因此，本文提供的系统可以包括在一些实施例中用于搅拌溶液的装置。 用于搅拌的这种手段可能不同于用于将溶液供应到室的入口。