发明授权
US08003459B2 Method for forming semiconductor devices with active silicon height variation
有权
用于形成具有活性硅高度变化的半导体器件的方法
- 专利标题： Method for forming semiconductor devices with active silicon height variation
- 专利标题（中）： 用于形成具有活性硅高度变化的半导体器件的方法
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申请号： US12691477申请日： 2010-01-21
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公开(公告)号： US08003459B2公开(公告)日： 2011-08-23
- 发明人: David E. Brown , Hans Van Meer , Sey-Ping Sun
- 申请人： David E. Brown , Hans Van Meer , Sey-Ping Sun
- 申请人地址： US CA Sunnyvale
- 专利权人： Advanced Micro Devices, Inc.
- 当前专利权人： Advanced Micro Devices, Inc.
- 当前专利权人地址： US CA Sunnyvale
- 代理机构： Volpe and Koenig, P.C.
- 主分类号： H01L21/8238
- IPC分类号： H01L21/8238
摘要：
A method for forming different active thicknesses on the same silicon layer includes masking the silicon layer and exposing selected regions of the silicon layer. The thickness of the silicon layer at the exposed regions is changed, either by adding silicon or subtracting silicon from the layer at the exposed regions. Once the mask is removed, the silicon layer has regions of different active thicknesses, respectively suitable for use in different types of devices, such as diodes and transistors.
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