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    Semiconductor devices with active semiconductor height variation
    1.
    发明授权
    Semiconductor devices with active semiconductor height variation 有权
    具有半导体高度变化的半导体器件

    公开(公告)号：US08497556B2

    公开(公告)日：2013-07-30

    申请号：US13607023

    申请日：2012-09-07

    申请人： David E. Brown ,  Hans Van Meer ,  Sey-Ping Sun

    发明人： David E. Brown ,  Hans Van Meer ,  Sey-Ping Sun

    IPC分类号： H01L31/119

    CPC分类号： H01L29/0684 ,  H01L21/84 ,  H01L27/1203

    摘要： A semiconductor product has different active thicknesses of silicon on a single semiconductor substrate. The thickness of the silicon layer is changed either by selectively adding silicon or subtracting silicon from an original layer of silicon. The different active thicknesses are suitable for use in different types of devices, such as diodes and transistors.

    摘要翻译： 半导体产品在单个半导体衬底上具有不同的有源厚度的硅。 通过选择性地添加硅或从原始硅层减去硅来改变硅层的厚度。 不同的有源厚度适用于不同类型的器件，例如二极管和晶体管。

    METHOD FOR FORMING SEMICONDUCTOR DEVICES WITH ACTIVE SILICON HEIGHT VARIATION
    2.
    发明申请
    METHOD FOR FORMING SEMICONDUCTOR DEVICES WITH ACTIVE SILICON HEIGHT VARIATION 有权
    用于形成具有活性硅高度变化的半导体器件的方法

    公开(公告)号：US20110272791A1

    公开(公告)日：2011-11-10

    申请号：US13184050

    申请日：2011-07-15

    申请人： David E. Brown ,  Hans Van Meer ,  Sey-Ping Sun

    发明人： David E. Brown ,  Hans Van Meer ,  Sey-Ping Sun

    IPC分类号： H01L27/06 ,  H01L21/20

    CPC分类号： H01L29/0684 ,  H01L21/84 ,  H01L27/1203

    摘要： A method far farming different active thicknesses on the same silicon layer includes masking the silicon layer and exposing selected regions of the silicon layer. The thickness of the silicon layer at the exposed regions is changed, either by adding silicon or subtracting silicon from the layer at the exposed regions. Once the mask is removed, the silicon layer has regions of different active thicknesses, respectively suitable for use in different types of devices, such as diodes and transistors.

    摘要翻译： 在同一硅层上种植不同有源厚度的方法包括掩蔽硅层并暴露硅层的选定区域。 通过在曝光区域从层中添加硅或从中减去硅来改变暴露区域处的硅层的厚度。 一旦去除掩模，硅层就具有不同有源厚度的区域，分别适用于不同类型的器件，例如二极管和晶体管。

    Method for forming semiconductor devices with active silicon height variation
    3.
    发明授权
    Method for forming semiconductor devices with active silicon height variation 有权
    用于形成具有活性硅高度变化的半导体器件的方法

    公开(公告)号：US08003459B2

    公开(公告)日：2011-08-23

    申请号：US12691477

    申请日：2010-01-21

    申请人： David E. Brown ,  Hans Van Meer ,  Sey-Ping Sun

    发明人： David E. Brown ,  Hans Van Meer ,  Sey-Ping Sun

    IPC分类号： H01L21/8238

    CPC分类号： H01L29/0684 ,  H01L21/84 ,  H01L27/1203

    摘要： A method for forming different active thicknesses on the same silicon layer includes masking the silicon layer and exposing selected regions of the silicon layer. The thickness of the silicon layer at the exposed regions is changed, either by adding silicon or subtracting silicon from the layer at the exposed regions. Once the mask is removed, the silicon layer has regions of different active thicknesses, respectively suitable for use in different types of devices, such as diodes and transistors.

    摘要翻译： 在同一硅层上形成不同有源厚度的方法包括掩蔽硅层并暴露硅层的选定区域。 通过在曝光区域从层中添加硅或从中减去硅来改变暴露区域处的硅层的厚度。 一旦去除掩模，硅层就具有不同有源厚度的区域，分别适用于不同类型的器件，例如二极管和晶体管。

    Method for forming semiconductor devices with active silicon height variation
    4.
    发明授权
    Method for forming semiconductor devices with active silicon height variation 有权
    用于形成具有活性硅高度变化的半导体器件的方法

    公开(公告)号：US08263453B2

    公开(公告)日：2012-09-11

    申请号：US13184050

    申请日：2011-07-15

    申请人： David E. Brown ,  Hans Van Meer ,  Sey-Ping Sun

    发明人： David E. Brown ,  Hans Van Meer ,  Sey-Ping Sun

    IPC分类号： H01L21/8238

    CPC分类号： H01L29/0684 ,  H01L21/84 ,  H01L27/1203

    摘要： A method far farming different active thicknesses on the same silicon layer includes masking the silicon layer and exposing selected regions of the silicon layer. The thickness of the silicon layer at the exposed regions is changed, either by adding silicon or subtracting silicon from the layer at the exposed regions. Once the mask is removed, the silicon layer has regions of different active thicknesses, respectively suitable for use in different types of devices, such as diodes and transistors.

    摘要翻译： 在同一硅层上种植不同有源厚度的方法包括掩蔽硅层并暴露硅层的选定区域。 通过在曝光区域从层中添加硅或从中减去硅来改变暴露区域处的硅层的厚度。 一旦去除掩模，硅层就具有不同有源厚度的区域，分别适用于不同类型的器件，例如二极管和晶体管。

    METHOD FOR FORMING SEMICONDUCTOR DEVICES WITH ACTIVE SILICON HEIGHT VARIATION
    5.
    发明申请
    METHOD FOR FORMING SEMICONDUCTOR DEVICES WITH ACTIVE SILICON HEIGHT VARIATION 有权
    用于形成具有活性硅高度变化的半导体器件的方法

    公开(公告)号：US20100151660A1

    公开(公告)日：2010-06-17

    申请号：US12691477

    申请日：2010-01-21

    申请人： David E. Brown ,  Hans Van Meer ,  Sey-Ping Sun

    发明人： David E. Brown ,  Hans Van Meer ,  Sey-Ping Sun

    IPC分类号： H01L21/20

    CPC分类号： H01L29/0684 ,  H01L21/84 ,  H01L27/1203

    摘要： A method for forming different active thicknesses on the same silicon layer includes masking the silicon layer and exposing selected regions of the silicon layer. The thickness of the silicon layer at the exposed regions is changed, either by adding silicon or subtracting silicon from the layer at the exposed regions. Once the mask is removed, the silicon layer has regions of different active thicknesses, respectively suitable for use in different types of devices, such as diodes and transistors.

    摘要翻译： 在同一硅层上形成不同有源厚度的方法包括掩蔽硅层并暴露硅层的选定区域。 通过在曝光区域从层中添加硅或从中减去硅来改变暴露区域处的硅层的厚度。 一旦去除掩模，硅层就具有不同有源厚度的区域，分别适用于不同类型的器件，例如二极管和晶体管。

    Method for forming semiconductor devices with active silicon height variation
    6.
    发明授权
    Method for forming semiconductor devices with active silicon height variation 有权
    用于形成活性硅高度变化的半导体器件的方法

    公开(公告)号：US07666735B1

    公开(公告)日：2010-02-23

    申请号：US11053935

    申请日：2005-02-10

    申请人： David E. Brown ,  Hans Van Meer ,  Sey-Ping Sun

    发明人： David E. Brown ,  Hans Van Meer ,  Sey-Ping Sun

    IPC分类号： H01L21/8238

    CPC分类号： H01L29/0684 ,  H01L21/84 ,  H01L27/1203

    摘要： A method for forming different active thicknesses on the same silicon layer includes masking the silicon layer and exposing selected regions of the silicon layer. The thickness of the silicon layer at the exposed regions is changed, either by adding silicon or subtracting silicon from the layer at the exposed regions. Once the mask is removed, the silicon layer has regions of different active thicknesses, respectively suitable for use in different types of devices, such as diodes and transistors.

    摘要翻译： 在同一硅层上形成不同有源厚度的方法包括掩蔽硅层并暴露硅层的选定区域。 通过在曝光区域从层中添加硅或从中减去硅来改变暴露区域处的硅层的厚度。 一旦去除掩模，硅层就具有不同有源厚度的区域，分别适用于不同类型的器件，例如二极管和晶体管。

    METHOD FOR FORMING SEMICONDUCTOR DEVICES WITH ACTIVE SILICON HEIGHT VARIATION
    7.
    发明申请
    METHOD FOR FORMING SEMICONDUCTOR DEVICES WITH ACTIVE SILICON HEIGHT VARIATION 有权
    用于形成具有活性硅高度变化的半导体器件的方法

    公开(公告)号：US20120326279A1

    公开(公告)日：2012-12-27

    申请号：US13607023

    申请日：2012-09-07

    申请人： David E. Brown ,  Hans Van Meer ,  Sey-Ping Sun

    发明人： David E. Brown ,  Hans Van Meer ,  Sey-Ping Sun

    IPC分类号： H01L21/20 ,  H01L29/16

    CPC分类号： H01L29/0684 ,  H01L21/84 ,  H01L27/1203

    摘要： A semiconductor product has different active thicknesses of silicon on a single semiconductor substrate. The thickness of the silicon layer is changed either by selectively adding silicon or subtracting silicon from an original layer of silicon. The different active thicknesses are suitable for use in different types of devices, such as diodes and transistors.

    摘要翻译： 半导体产品在单个半导体衬底上具有不同的有源厚度的硅。 通过选择性地添加硅或从原始硅层减去硅来改变硅层的厚度。 不同的有源厚度适用于不同类型的器件，例如二极管和晶体管。

    METHODS OF FORMING BULK FINFET DEVICES WITH REPLACEMENT GATES SO AS TO REDUCE PUNCH THROUGH LEAKAGE CURRENTS
    9.
    发明申请
    METHODS OF FORMING BULK FINFET DEVICES WITH REPLACEMENT GATES SO AS TO REDUCE PUNCH THROUGH LEAKAGE CURRENTS 有权
    形成具有更换盖的块状FINFET器件的方法，以减少通过泄漏电流的冲击

    公开(公告)号：US20130224945A1

    公开(公告)日：2013-08-29

    申请号：US13408139

    申请日：2012-02-29

    申请人： Yanxiang Liu ,  Michael Hargrove ,  Xiaodong Yang ,  Hans Van Meer ,  Laegu Kang ,  Christian Gruensfelder ,  Srikanth Samavedam

    发明人： Yanxiang Liu ,  Michael Hargrove ,  Xiaodong Yang ,  Hans Van Meer ,  Laegu Kang ,  Christian Gruensfelder ,  Srikanth Samavedam

    IPC分类号： H01L21/28

    CPC分类号： H01L29/66545 ,  H01L29/66795

    摘要： One illustrative method disclosed herein includes forming a plurality of spaced-apart trenches in a semiconducting substrate to thereby define a fin structure for the device, forming a local isolation region within each of the trenches, forming a sacrificial gate structure on the fin structure, wherein the sacrificial gate structure comprises at least a sacrificial gate electrode, and forming a layer of insulating material above the fin structure and within the trench above the local isolation region. In this example, the method further includes performing at least one etching process to remove the sacrificial gate structure to thereby define a gate cavity, after removing the sacrificial gate structure, performing at least one etching process to form a recess in the local isolation region, and forming a replacement gate structure that is positioned in the recess in the local isolation region and in the gate cavity.

    摘要翻译： 本文公开的一种说明性方法包括在半导体衬底中形成多个间隔开的沟槽，从而限定用于器件的鳍结构，在每个沟槽内形成局部隔离区，在翅片结构上形成牺牲栅极结构，其中 所述牺牲栅极结构至少包括牺牲栅电极，以及在所述鳍结构之上和所述局部隔离区之上的沟槽内形成绝缘材料层。 在该示例中，该方法还包括执行至少一个蚀刻工艺以去除牺牲栅极结构，从而在去除牺牲栅极结构之后，确定栅极腔，执行至少一个蚀刻工艺以在局部隔离区域中形成凹陷， 以及形成位于局部隔离区域和门腔中的凹部中的替换栅极结构。