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1.发明申请METHOD FOR FORMING SEMICONDUCTOR DEVICES WITH ACTIVE SILICON HEIGHT VARIATION 有权用于形成具有活性硅高度变化的半导体器件的方法公开(公告)号：US20110272791A1
公开(公告)日：2011-11-10
申请号：US13184050
申请日：2011-07-15
申请人： David E. Brown , Hans Van Meer , Sey-Ping Sun
发明人： David E. Brown , Hans Van Meer , Sey-Ping Sun
CPC分类号： H01L29/0684 , H01L21/84 , H01L27/1203
摘要： A method far farming different active thicknesses on the same silicon layer includes masking the silicon layer and exposing selected regions of the silicon layer. The thickness of the silicon layer at the exposed regions is changed, either by adding silicon or subtracting silicon from the layer at the exposed regions. Once the mask is removed, the silicon layer has regions of different active thicknesses, respectively suitable for use in different types of devices, such as diodes and transistors.
摘要翻译： 在同一硅层上种植不同有源厚度的方法包括掩蔽硅层并暴露硅层的选定区域。 通过在曝光区域从层中添加硅或从中减去硅来改变暴露区域处的硅层的厚度。 一旦去除掩模，硅层就具有不同有源厚度的区域，分别适用于不同类型的器件，例如二极管和晶体管。
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公开(公告)号：US08497556B2
公开(公告)日：2013-07-30
申请号：US13607023
申请日：2012-09-07
申请人： David E. Brown , Hans Van Meer , Sey-Ping Sun
发明人： David E. Brown , Hans Van Meer , Sey-Ping Sun
IPC分类号： H01L31/119
CPC分类号： H01L29/0684 , H01L21/84 , H01L27/1203
摘要： A semiconductor product has different active thicknesses of silicon on a single semiconductor substrate. The thickness of the silicon layer is changed either by selectively adding silicon or subtracting silicon from an original layer of silicon. The different active thicknesses are suitable for use in different types of devices, such as diodes and transistors.
摘要翻译： 半导体产品在单个半导体衬底上具有不同的有源厚度的硅。 通过选择性地添加硅或从原始硅层减去硅来改变硅层的厚度。 不同的有源厚度适用于不同类型的器件，例如二极管和晶体管。
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3.发明授权Method for forming semiconductor devices with active silicon height variation 有权用于形成具有活性硅高度变化的半导体器件的方法公开(公告)号：US08003459B2
公开(公告)日：2011-08-23
申请号：US12691477
申请日：2010-01-21
申请人： David E. Brown , Hans Van Meer , Sey-Ping Sun
发明人： David E. Brown , Hans Van Meer , Sey-Ping Sun
IPC分类号： H01L21/8238
CPC分类号： H01L29/0684 , H01L21/84 , H01L27/1203
摘要： A method for forming different active thicknesses on the same silicon layer includes masking the silicon layer and exposing selected regions of the silicon layer. The thickness of the silicon layer at the exposed regions is changed, either by adding silicon or subtracting silicon from the layer at the exposed regions. Once the mask is removed, the silicon layer has regions of different active thicknesses, respectively suitable for use in different types of devices, such as diodes and transistors.
摘要翻译： 在同一硅层上形成不同有源厚度的方法包括掩蔽硅层并暴露硅层的选定区域。 通过在曝光区域从层中添加硅或从中减去硅来改变暴露区域处的硅层的厚度。 一旦去除掩模，硅层就具有不同有源厚度的区域，分别适用于不同类型的器件，例如二极管和晶体管。
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4.发明授权Method for forming semiconductor devices with active silicon height variation 有权用于形成具有活性硅高度变化的半导体器件的方法公开(公告)号：US08263453B2
公开(公告)日：2012-09-11
申请号：US13184050
申请日：2011-07-15
申请人： David E. Brown , Hans Van Meer , Sey-Ping Sun
发明人： David E. Brown , Hans Van Meer , Sey-Ping Sun
IPC分类号： H01L21/8238
CPC分类号： H01L29/0684 , H01L21/84 , H01L27/1203
摘要： A method far farming different active thicknesses on the same silicon layer includes masking the silicon layer and exposing selected regions of the silicon layer. The thickness of the silicon layer at the exposed regions is changed, either by adding silicon or subtracting silicon from the layer at the exposed regions. Once the mask is removed, the silicon layer has regions of different active thicknesses, respectively suitable for use in different types of devices, such as diodes and transistors.
摘要翻译： 在同一硅层上种植不同有源厚度的方法包括掩蔽硅层并暴露硅层的选定区域。 通过在曝光区域从层中添加硅或从中减去硅来改变暴露区域处的硅层的厚度。 一旦去除掩模，硅层就具有不同有源厚度的区域，分别适用于不同类型的器件，例如二极管和晶体管。
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5.发明申请METHOD FOR FORMING SEMICONDUCTOR DEVICES WITH ACTIVE SILICON HEIGHT VARIATION 有权用于形成具有活性硅高度变化的半导体器件的方法公开(公告)号：US20100151660A1
公开(公告)日：2010-06-17
申请号：US12691477
申请日：2010-01-21
申请人： David E. Brown , Hans Van Meer , Sey-Ping Sun
发明人： David E. Brown , Hans Van Meer , Sey-Ping Sun
IPC分类号： H01L21/20
CPC分类号： H01L29/0684 , H01L21/84 , H01L27/1203
摘要： A method for forming different active thicknesses on the same silicon layer includes masking the silicon layer and exposing selected regions of the silicon layer. The thickness of the silicon layer at the exposed regions is changed, either by adding silicon or subtracting silicon from the layer at the exposed regions. Once the mask is removed, the silicon layer has regions of different active thicknesses, respectively suitable for use in different types of devices, such as diodes and transistors.
摘要翻译： 在同一硅层上形成不同有源厚度的方法包括掩蔽硅层并暴露硅层的选定区域。 通过在曝光区域从层中添加硅或从中减去硅来改变暴露区域处的硅层的厚度。 一旦去除掩模，硅层就具有不同有源厚度的区域，分别适用于不同类型的器件，例如二极管和晶体管。
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6.发明授权Method for forming semiconductor devices with active silicon height variation 有权用于形成活性硅高度变化的半导体器件的方法公开(公告)号：US07666735B1
公开(公告)日：2010-02-23
申请号：US11053935
申请日：2005-02-10
申请人： David E. Brown , Hans Van Meer , Sey-Ping Sun
发明人： David E. Brown , Hans Van Meer , Sey-Ping Sun
IPC分类号： H01L21/8238
CPC分类号： H01L29/0684 , H01L21/84 , H01L27/1203
摘要： A method for forming different active thicknesses on the same silicon layer includes masking the silicon layer and exposing selected regions of the silicon layer. The thickness of the silicon layer at the exposed regions is changed, either by adding silicon or subtracting silicon from the layer at the exposed regions. Once the mask is removed, the silicon layer has regions of different active thicknesses, respectively suitable for use in different types of devices, such as diodes and transistors.
摘要翻译： 在同一硅层上形成不同有源厚度的方法包括掩蔽硅层并暴露硅层的选定区域。 通过在曝光区域从层中添加硅或从中减去硅来改变暴露区域处的硅层的厚度。 一旦去除掩模，硅层就具有不同有源厚度的区域，分别适用于不同类型的器件，例如二极管和晶体管。
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7.发明申请METHOD FOR FORMING SEMICONDUCTOR DEVICES WITH ACTIVE SILICON HEIGHT VARIATION 有权用于形成具有活性硅高度变化的半导体器件的方法公开(公告)号：US20120326279A1
公开(公告)日：2012-12-27
申请号：US13607023
申请日：2012-09-07
申请人： David E. Brown , Hans Van Meer , Sey-Ping Sun
发明人： David E. Brown , Hans Van Meer , Sey-Ping Sun
CPC分类号： H01L29/0684 , H01L21/84 , H01L27/1203
摘要： A semiconductor product has different active thicknesses of silicon on a single semiconductor substrate. The thickness of the silicon layer is changed either by selectively adding silicon or subtracting silicon from an original layer of silicon. The different active thicknesses are suitable for use in different types of devices, such as diodes and transistors.
摘要翻译： 半导体产品在单个半导体衬底上具有不同的有源厚度的硅。 通过选择性地添加硅或从原始硅层减去硅来改变硅层的厚度。 不同的有源厚度适用于不同类型的器件，例如二极管和晶体管。
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8.发明授权Semiconductor device based on Si-Ge with high stress liner for enhanced channel carrier mobility 有权基于具有高应力衬垫的Si-Ge的半导体器件，用于增强通道载流子迁移率公开(公告)号：US07053400B2
公开(公告)日：2006-05-30
申请号：US10838330
申请日：2004-05-05
申请人： Sey-Ping Sun , David E. Brown
发明人： Sey-Ping Sun , David E. Brown
IPC分类号： H01L31/072
CPC分类号： H01L29/7843 , H01L21/823807 , H01L21/823828 , H01L29/1054 , H01L29/665 , H01L29/6653 , H01L29/6656
摘要： The carrier mobility in transistor channel regions of Si—Ge devices is increased by employing a stressed liner. Embodiments include applying a high compressive or tensile stressed film overlying relaxed source/drain regions. Other embodiments include applying a high compressively or high tensilely stressed film, after post silicide spacer removal, over gate electrodes and strained Si source/drain regions of P-channel or N-channel transistors, respectively.
摘要翻译： Si-Ge器件的晶体管沟道区域中的载流子迁移率通过使用应力衬里而增加。 实施例包括施加覆盖松弛的源极/漏极区域的高压缩或拉伸应力膜。 其他实施例包括分别在栅极电极和P沟道或N沟道晶体管的应变Si源极/漏极区之后施加高度压缩或高拉伸应力膜，在硅化物间隔物去除之后。
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9.发明授权Method for detecting silicide encroachment of a gate electrode in a semiconductor arrangement 有权用于检测半导体装置中栅电极的硅化物侵入的方法公开(公告)号：US06955931B1
公开(公告)日：2005-10-18
申请号：US11053863
申请日：2005-02-10
申请人： David E. Brown , Sey-Ping Sun
发明人： David E. Brown , Sey-Ping Sun
IPC分类号： H01L21/336 , H01L21/66
CPC分类号： H01L29/7842 , H01L22/24 , H01L29/665 , H01L29/6653
摘要： A method of detecting silicide encroachment to the sidewalls of a gate electrode includes forming silicide at a device, with sidewall spacers defining a desired separation of the silicide from the sidewalls of the gate electrode. After silicide formation, the sidewall spacers are removed and line-of-sight monitoring is performed of the region previously obscured by the sidewall spacers, thereby permitting detection of silicide encroachment.
摘要翻译： 检测硅化物侵入到栅电极的侧壁的方法包括在器件处形成硅化物，其中侧壁间隔物限定硅化物与栅电极的侧壁的期望间隔。 在硅化物形成之后，去除侧壁间隔物，并且对由先前被侧壁间隔物遮蔽的区域进行视线监测，从而允许检测硅化物侵入。
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10.发明授权Dynamic wireless networks and interactive wireless information communication and delivery systems for calculating distance to an object 有权动态无线网络和用于计算距离物体的交互式无线信息通信和传送系统公开(公告)号：US08594638B2
公开(公告)日：2013-11-26
申请号：US13310761
申请日：2011-12-04
CPC分类号： H04W4/023 , H04B17/27 , H04B17/318 , H04W64/00
摘要： A method is disclosed for calculating a distance to objects or a nearest object to a wireless enabled device. The method includes the steps of broadcasting a signal by the wireless enabled device to data tags, receiving by the data tags the signal by the wireless enabled device, and obtaining by each of the data tags a signal strength indicator of the wireless enabled device based on the signal from the wireless enabled device. Each of the data tags in a range transmits a signal to the wireless enabled device including the signal strength indicator of the wireless enabled device. Each signal strength indicator of the wireless enabled device is communicated to a positioning and communication system.
摘要翻译： 公开了一种用于计算到与无线使能设备的物体或最近物体的距离的方法。 该方法包括以下步骤：将无线使能设备的信号广播到数据标签，由数据标签接收无线使能设备的信号，以及通过每个数据标签获得基于无线功能的设备的信号强度指示符，基于 来自无线使能设备的信号。 范围中的每个数据标签将信号发送到包括无线使能设备的信号强度指示符的无线使能设备。 无线使能设备的每个信号强度指示符被传送到定位和通信系统。
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