发明授权
- 专利标题： Memory cell supply voltage control based on error detection
- 专利标题（中）： 基于错误检测的存储单元电源电压控制
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申请号： US11542007申请日： 2006-09-29
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公开(公告)号： US08006164B2公开(公告)日： 2011-08-23
- 发明人: Khellah Muhammad , Dinesh Somasekhar , Yibin Ye , Nam Sung Kim , Vivek De
- 申请人： Khellah Muhammad , Dinesh Somasekhar , Yibin Ye , Nam Sung Kim , Vivek De
- 申请人地址： US CA Santa Clara
- 专利权人： Intel Corporation
- 当前专利权人： Intel Corporation
- 当前专利权人地址： US CA Santa Clara
- 代理商 Matthew C. Fagan
- 主分类号： G11C29/00
- IPC分类号： G11C29/00
摘要：
For one embodiment, an apparatus comprises memory circuitry including memory cells, error detection circuitry to detect error in data stored by memory cells of the memory circuitry, and supply voltage control circuitry to increase supply voltage for one or more memory cells of the memory circuitry based at least in part on detected error. Other embodiments have one or more other features.
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