发明授权
- 专利标题: High density planar magnetic domain wall memory apparatus
- 专利标题(中): 高密度平面磁畴壁存储装置
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申请号: US12136089申请日: 2008-06-10
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公开(公告)号: US08009453B2公开(公告)日: 2011-08-30
- 发明人: Michael C. Gaidis , Lawrence A. Clevenger , Timothy J. Dalton , John K. DeBrosse , Louis L. C. Hsu , Carl Radens , Keith Kwong-Hon Wong , Chih-Chao Yang
- 申请人: Michael C. Gaidis , Lawrence A. Clevenger , Timothy J. Dalton , John K. DeBrosse , Louis L. C. Hsu , Carl Radens , Keith Kwong-Hon Wong , Chih-Chao Yang
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理机构: Cantor Colburn LLP
- 代理商 Louis J. Percello
- 主分类号: G11C19/08
- IPC分类号: G11C19/08 ; G11C19/38
摘要:
A magnetic domain wall memory apparatus with write/read capability includes a plurality of coplanar shift register structures each comprising an elongated track formed from a ferromagnetic material having a plurality of magnetic domains therein, the shift register structures further having a plurality of discontinuities therein to facilitate domain wall location; a magnetic read element associated with each of the shift register structures; and a magnetic write element associated with each of the shift register structures, the magnetic write element further comprising a write wire having a constriction therein, the constriction located at a point corresponding to the location of the plurality of discontinuities in the associated shift register structure.
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