发明授权
- 专利标题： Process of forming an electronic device including insulating layers having different strains
- 专利标题（中）： 形成具有不同应变的绝缘层的电子器件的工艺
-
申请号： US12883096申请日： 2010-09-15
-
公开(公告)号： US08021957B2公开(公告)日： 2011-09-20
- 发明人: Paul A. Grudowski , Venkat R. Kolagunta , Mehul D. Shroff
- 申请人： Paul A. Grudowski , Venkat R. Kolagunta , Mehul D. Shroff
- 申请人地址： US TX Austin
- 专利权人： Freescale Semiconductor, Inc.
- 当前专利权人： Freescale Semiconductor, Inc.
- 当前专利权人地址： US TX Austin
- 主分类号： H01L21/76
- IPC分类号： H01L21/76
摘要：
An electronic device can include a field isolation region and a first insulating layer having a first strain and having a portion, which from a top view, lies entirely within the field isolation region. The electronic device can also include a second insulating layer having a second strain different from the first strain and including an opening. From a top view, the portion of the first insulating layer can lie within the opening in the second insulating layer. In one embodiment, the field isolation region can include a dummy structure and the portion of the first insulating layer can overlie the dummy structure. A process of forming the electronic device can include forming an island portion of an insulating layer wherein from a top view, the island portion lies entirely within the field isolation region.