发明授权
- 专利标题： Semiconductor device
- 专利标题（中）： 半导体器件
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申请号： US12203851申请日： 2008-09-03
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公开(公告)号： US08022537B2公开(公告)日： 2011-09-20
- 发明人: Hitoshi Akamine , Masashi Suzuki , Masao Yamane , Tetsuaki Adachi
- 申请人： Hitoshi Akamine , Masashi Suzuki , Masao Yamane , Tetsuaki Adachi
- 申请人地址： JP Kawasaki-shi
- 专利权人： Renesas Electronics Corporation
- 当前专利权人： Renesas Electronics Corporation
- 当前专利权人地址： JP Kawasaki-shi
- 代理机构： Miles & Stockbridge P.C.
- 优先权： JP2001-366351 20011130
- 主分类号： H01L23/48
- IPC分类号： H01L23/48 ; H01L23/52 ; H01R11/00
摘要：
The present invention provides a semiconductor device comprising a semiconductor substrate, and transistors formed on the semiconductor substrate, wherein control electrode terminals constituting external electrode terminals of the transistors, and first electrode terminals which transmit output signals, are provided on a main surface of the semiconductor substrate, wherein the control electrode terminals are provided at least one, and a plurality of the first electrode terminals are arranged on one side and a plurality of the first electrode terminals are arranged on the other side with the control electrode terminals being interposed therebetween, wherein a portion including the control electrode terminals and a plurality of the first electrode terminals located on one side of the control electrode terminals constitute a first transistor portion, and wherein a portion including the control electrode terminals and a plurality of the first electrode terminals located on the other side of the control electrode terminals constitute a second transistor portion. The semiconductor device is quadrangular.
公开/授权文献
- US20090008774A1 SEMICONDUCTOR DEVICE 公开/授权日：2009-01-08
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