公开(公告)号：US07439622B2

公开(公告)日：2008-10-21

申请号：US11581587

申请日：2006-10-17

申请人： Hitoshi Akamine ,  Masashi Suzuki ,  Masao Yamane ,  Tetsuaki Adachi

发明人： Hitoshi Akamine ,  Masashi Suzuki ,  Masao Yamane ,  Tetsuaki Adachi

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01R11/00

CPC分类号： H01L27/0207 ,  H01L23/4824 ,  H01L23/66 ,  H01L24/48 ,  H01L24/49 ,  H01L25/16 ,  H01L27/088 ,  H01L29/0696 ,  H01L29/1083 ,  H01L29/4175 ,  H01L29/41758 ,  H01L29/4238 ,  H01L29/7835 ,  H01L2223/6644 ,  H01L2223/6688 ,  H01L2224/05599 ,  H01L2224/45099 ,  H01L2224/49111 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/13091 ,  H01L2924/19041 ,  H01L2924/19105 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/3025 ,  H03F3/189 ,  H03F3/211 ,  H03F3/601 ,  H03F3/68 ,  H03F3/72 ,  H03F2200/294 ,  H03F2200/372 ,  H01L2224/45015 ,  H01L2924/207

摘要： The present invention provides a semiconductor device comprising a semiconductor substrate, and transistors formed on the semiconductor substrate, wherein control electrode terminals constituting external electrode terminals of the transistors, and first electrode terminals which transmit output signals, are provided on a main surface of the semiconductor substrate, wherein the control electrode terminals are provided at least one, and a plurality of the first electrode terminals are arranged on one side and a plurality of the first electrode terminals are arranged on the other side with the control electrode terminals being interposed therebetween, wherein a portion including the control electrode terminals and a plurality of the first electrode terminals located on one side of the control electrode terminals constitute a first transistor portion, and wherein a portion including the control electrode terminals and a plurality of the first electrode terminals located on the other side of the control electrode terminals constitute a second transistor portion. The semiconductor device is quadrangular.

摘要翻译： 本发明提供一种半导体器件，包括半导体衬底和形成在半导体衬底上的晶体管，其中构成晶体管的外部电极端子的控制电极端子和传输输出信号的第一电极端子设置在半导体的主表面上 基板，其中控制电极端子设置为至少一个，并且多个第一电极端子布置在一侧，并且多个第一电极端子布置在另一侧，其中控制电极端子插入其间，其中 包括控制电极端子和位于控制电极端子一侧的多个第一电极端子的部分构成第一晶体管部分，并且其中包括控制电极端子和位于第一晶体管部分上的多个第一电极端子的部分 另一边 的控制电极端子构成第二晶体管部分。 半导体器件是四边形。

公开(公告)号：US06992528B2

公开(公告)日：2006-01-31

申请号：US10870921

申请日：2004-06-21

申请人： Hitoshi Akamine ,  Masashi Suzuki ,  Masao Yamane ,  Tetsuaki Adachi

发明人： Hitoshi Akamine ,  Masashi Suzuki ,  Masao Yamane ,  Tetsuaki Adachi

IPC分类号： H03G3/20

CPC分类号： H01L27/0207 ,  H01L23/4824 ,  H01L23/66 ,  H01L24/48 ,  H01L24/49 ,  H01L25/16 ,  H01L27/088 ,  H01L29/0696 ,  H01L29/1083 ,  H01L29/4175 ,  H01L29/41758 ,  H01L29/4238 ,  H01L29/7835 ,  H01L2223/6644 ,  H01L2223/6688 ,  H01L2224/05599 ,  H01L2224/45099 ,  H01L2224/49111 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/13091 ,  H01L2924/19041 ,  H01L2924/19105 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/3025 ,  H03F3/189 ,  H03F3/211 ,  H03F3/601 ,  H03F3/68 ,  H03F3/72 ,  H03F2200/294 ,  H03F2200/372 ,  H01L2224/45015 ,  H01L2924/207

摘要： The present invention provides a semiconductor device comprising a semiconductor substrate, and transistors formed on the semiconductor substrate, wherein control electrode terminals constituting external electrode terminals of the transistors, and first electrode terminals which transmit output signals, are provided on a main surface of the semiconductor substrate, wherein the control electrode terminals are provided at least one, and a plurality of the first electrode terminals are arranged on one side and a plurality of the first electrode terminals are arranged on the other side with the control electrode terminals being interposed therebetween, wherein a portion including the control electrode terminals and a plurality of the first electrode terminals located on one side of the control electrode terminals constitute a first transistor portion, and wherein a portion including the control electrode terminals and a plurality of the first electrode terminals located on the other side of the control electrode terminals constitute a second transistor portion. The semiconductor device is quadrangular.

公开(公告)号：US06765268B2

公开(公告)日：2004-07-20

申请号：US10291834

申请日：2002-11-12

申请人： Hitoshi Akamine ,  Masashi Suzuki ,  Masao Yamane ,  Tetsuaki Adachi

发明人： Hitoshi Akamine ,  Masashi Suzuki ,  Masao Yamane ,  Tetsuaki Adachi

IPC分类号： H01L2976

CPC分类号： H01L27/0207 ,  H01L23/4824 ,  H01L23/66 ,  H01L24/48 ,  H01L24/49 ,  H01L25/16 ,  H01L27/088 ,  H01L29/0696 ,  H01L29/1083 ,  H01L29/4175 ,  H01L29/41758 ,  H01L29/4238 ,  H01L29/7835 ,  H01L2223/6644 ,  H01L2223/6688 ,  H01L2224/05599 ,  H01L2224/45099 ,  H01L2224/49111 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/13091 ,  H01L2924/19041 ,  H01L2924/19105 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/3025 ,  H03F3/189 ,  H03F3/211 ,  H03F3/601 ,  H03F3/68 ,  H03F3/72 ,  H03F2200/294 ,  H03F2200/372 ,  H01L2224/45015 ,  H01L2924/207

摘要： The present invention provides a semiconductor device comprising a semiconductor substrate, and transistors formed on the semiconductor substrate, wherein control electrode terminals constituting external electrode terminals of the transistors, and first electrode terminals which transmit output signals, are provided on a main surface of the semiconductor substrate, wherein the control electrode terminals are provided at least one, and a plurality of the first electrode terminals are arranged on one side and a plurality of the first electrode terminals are arranged on the other side with the control electrode terminals being interposed therebetween, wherein a portion including the control electrode terminals and a plurality of the first electrode terminals located on one side of the control electrode terminals constitute a first transistor portion, and wherein a portion including the control electrode terminals and a plurality of the first electrode terminals located on the other side of the control electrode terminals constitute a second transistor portion. The semiconductor device is quadrangular.

摘要翻译： 本发明提供一种半导体器件，包括半导体衬底和形成在半导体衬底上的晶体管，其中构成晶体管的外部电极端子的控制电极端子和传输输出信号的第一电极端子设置在半导体的主表面上 基板，其中控制电极端子设置为至少一个，并且多个第一电极端子布置在一侧，并且多个第一电极端子布置在另一侧，其中控制电极端子插入其间，其中 包括控制电极端子和位于控制电极端子一侧的多个第一电极端子的部分构成第一晶体管部分，并且其中包括控制电极端子和位于第一晶体管部分上的多个第一电极端子的部分 另一边 的控制电极端子构成第二晶体管部分。 半导体器件是四边形。

公开(公告)号：US08022537B2

公开(公告)日：2011-09-20

申请号：US12203851

申请日：2008-09-03

申请人： Hitoshi Akamine ,  Masashi Suzuki ,  Masao Yamane ,  Tetsuaki Adachi

发明人： Hitoshi Akamine ,  Masashi Suzuki ,  Masao Yamane ,  Tetsuaki Adachi

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01R11/00

CPC分类号： H01L27/0207 ,  H01L23/4824 ,  H01L23/66 ,  H01L24/48 ,  H01L24/49 ,  H01L25/16 ,  H01L27/088 ,  H01L29/0696 ,  H01L29/1083 ,  H01L29/4175 ,  H01L29/41758 ,  H01L29/4238 ,  H01L29/7835 ,  H01L2223/6644 ,  H01L2223/6688 ,  H01L2224/05599 ,  H01L2224/45099 ,  H01L2224/49111 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/13091 ,  H01L2924/19041 ,  H01L2924/19105 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/3025 ,  H03F3/189 ,  H03F3/211 ,  H03F3/601 ,  H03F3/68 ,  H03F3/72 ,  H03F2200/294 ,  H03F2200/372 ,  H01L2224/45015 ,  H01L2924/207

摘要： The present invention provides a semiconductor device comprising a semiconductor substrate, and transistors formed on the semiconductor substrate, wherein control electrode terminals constituting external electrode terminals of the transistors, and first electrode terminals which transmit output signals, are provided on a main surface of the semiconductor substrate, wherein the control electrode terminals are provided at least one, and a plurality of the first electrode terminals are arranged on one side and a plurality of the first electrode terminals are arranged on the other side with the control electrode terminals being interposed therebetween, wherein a portion including the control electrode terminals and a plurality of the first electrode terminals located on one side of the control electrode terminals constitute a first transistor portion, and wherein a portion including the control electrode terminals and a plurality of the first electrode terminals located on the other side of the control electrode terminals constitute a second transistor portion. The semiconductor device is quadrangular.

摘要翻译： 本发明提供一种半导体器件，包括半导体衬底和形成在半导体衬底上的晶体管，其中构成晶体管的外部电极端子的控制电极端子和传输输出信号的第一电极端子设置在半导体的主表面上 基板，其中控制电极端子设置为至少一个，并且多个第一电极端子布置在一侧，并且多个第一电极端子布置在另一侧，其中控制电极端子插入其间，其中 包括控制电极端子和位于控制电极端子一侧的多个第一电极端子的部分构成第一晶体管部分，并且其中包括控制电极端子和位于第一晶体管部分上的多个第一电极端子的部分 另一边 的控制电极端子构成第二晶体管部分。 半导体器件是四边形。

公开(公告)号：US20070034946A1

公开(公告)日：2007-02-15

申请号：US11581587

申请日：2006-10-17

申请人： Hitoshi Akamine ,  Masashi Suzuki ,  Masao Yamane ,  Tetsuaki Adachi

发明人： Hitoshi Akamine ,  Masashi Suzuki ,  Masao Yamane ,  Tetsuaki Adachi

IPC分类号： H01L29/76

CPC分类号： H01L27/0207 ,  H01L23/4824 ,  H01L23/66 ,  H01L24/48 ,  H01L24/49 ,  H01L25/16 ,  H01L27/088 ,  H01L29/0696 ,  H01L29/1083 ,  H01L29/4175 ,  H01L29/41758 ,  H01L29/4238 ,  H01L29/7835 ,  H01L2223/6644 ,  H01L2223/6688 ,  H01L2224/05599 ,  H01L2224/45099 ,  H01L2224/49111 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/13091 ,  H01L2924/19041 ,  H01L2924/19105 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/3025 ,  H03F3/189 ,  H03F3/211 ,  H03F3/601 ,  H03F3/68 ,  H03F3/72 ,  H03F2200/294 ,  H03F2200/372 ,  H01L2224/45015 ,  H01L2924/207

摘要： The present invention provides a semiconductor device comprising a semiconductor substrate, and transistors formed on the semiconductor substrate, wherein control electrode terminals constituting external electrode terminals of the transistors, and first electrode terminals which transmit output signals, are provided on a main surface of the semiconductor substrate, wherein the control electrode terminals are provided at least one, and a plurality of the first electrode terminals are arranged on one side and a plurality of the first electrode terminals are arranged on the other side with the control electrode terminals being interposed therebetween, wherein a portion including the control electrode terminals and a plurality of the first electrode terminals located on one side of the control electrode terminals constitute a first transistor portion, and wherein a portion including the control electrode terminals and a plurality of the first electrode terminals located on the other side of the control electrode terminals constitute a second transistor portion. The semiconductor device is quadrangular.

摘要翻译： 本发明提供一种半导体器件，包括半导体衬底和形成在半导体衬底上的晶体管，其中构成晶体管的外部电极端子的控制电极端子和传输输出信号的第一电极端子设置在半导体的主表面上 基板，其中控制电极端子设置为至少一个，并且多个第一电极端子布置在一侧，并且多个第一电极端子布置在另一侧，其中控制电极端子插入其间，其中 包括控制电极端子和位于控制电极端子一侧的多个第一电极端子的部分构成第一晶体管部分，并且其中包括控制电极端子和位于第一晶体管部分上的多个第一电极端子的部分 另一边 的控制电极端子构成第二晶体管部分。 半导体器件是四边形。

公开(公告)号：US20090008774A1

公开(公告)日：2009-01-08

申请号：US12203851

申请日：2008-09-03

申请人： HITOSHI AKAMINE ,  Masashi Suzuki ,  Masao Yamane ,  Tetsuaki Adachi

发明人： HITOSHI AKAMINE ,  Masashi Suzuki ,  Masao Yamane ,  Tetsuaki Adachi

IPC分类号： H01L23/48 ,  H03F3/16

CPC分类号： H01L27/0207 ,  H01L23/4824 ,  H01L23/66 ,  H01L24/48 ,  H01L24/49 ,  H01L25/16 ,  H01L27/088 ,  H01L29/0696 ,  H01L29/1083 ,  H01L29/4175 ,  H01L29/41758 ,  H01L29/4238 ,  H01L29/7835 ,  H01L2223/6644 ,  H01L2223/6688 ,  H01L2224/05599 ,  H01L2224/45099 ,  H01L2224/49111 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/13091 ,  H01L2924/19041 ,  H01L2924/19105 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/3025 ,  H03F3/189 ,  H03F3/211 ,  H03F3/601 ,  H03F3/68 ,  H03F3/72 ,  H03F2200/294 ,  H03F2200/372 ,  H01L2224/45015 ,  H01L2924/207

摘要： The present invention provides a semiconductor device comprising a semiconductor substrate, and transistors formed on the semiconductor substrate, wherein control electrode terminals constituting external electrode terminals of the transistors, and first electrode terminals which transmit output signals, are provided on a main surface of the semiconductor substrate, wherein the control electrode terminals are provided at least one, and a plurality of the first electrode terminals are arranged on one side and a plurality of the first electrode terminals are arranged on the other side with the control electrode terminals being interposed therebetween, wherein a portion including the control electrode terminals and a plurality of the first electrode terminals located on one side of the control electrode terminals constitute a first transistor portion, and wherein a portion including the control electrode terminals and a plurality of the first electrode terminals located on the other side of the control electrode terminals constitute a second transistor portion. The semiconductor device is quadrangular.

摘要翻译： 本发明提供一种半导体器件，包括半导体衬底和形成在半导体衬底上的晶体管，其中构成晶体管的外部电极端子的控制电极端子和传输输出信号的第一电极端子设置在半导体的主表面上 基板，其中控制电极端子设置为至少一个，并且多个第一电极端子布置在一侧，并且多个第一电极端子布置在另一侧，其中控制电极端子插入其间，其中 包括控制电极端子和位于控制电极端子一侧的多个第一电极端子的部分构成第一晶体管部分，并且其中包括控制电极端子和位于第一晶体管部分上的多个第一电极端子的部分 另一边 的控制电极端子构成第二晶体管部分。 半导体器件是四边形。

公开(公告)号：US07141876B2

公开(公告)日：2006-11-28

申请号：US11280464

申请日：2005-11-17

申请人： Hitoshi Akamine ,  Masashi Suzuki ,  Masao Yamane ,  Tetsuaki Adachi

发明人： Hitoshi Akamine ,  Masashi Suzuki ,  Masao Yamane ,  Tetsuaki Adachi

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01R11/00

CPC分类号： H01L27/0207 ,  H01L23/4824 ,  H01L23/66 ,  H01L24/48 ,  H01L24/49 ,  H01L25/16 ,  H01L27/088 ,  H01L29/0696 ,  H01L29/1083 ,  H01L29/4175 ,  H01L29/41758 ,  H01L29/4238 ,  H01L29/7835 ,  H01L2223/6644 ,  H01L2223/6688 ,  H01L2224/05599 ,  H01L2224/45099 ,  H01L2224/49111 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/13091 ,  H01L2924/19041 ,  H01L2924/19105 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/3025 ,  H03F3/189 ,  H03F3/211 ,  H03F3/601 ,  H03F3/68 ,  H03F3/72 ,  H03F2200/294 ,  H03F2200/372 ,  H01L2224/45015 ,  H01L2924/207

摘要： The present invention provides a semiconductor device comprising a semiconductor substrate, and transistors formed on the semiconductor substrate, wherein control electrode terminals constituting external electrode terminals of the transistors, and first electrode terminals which transmit output signals, are provided on a main surface of the semiconductor substrate, wherein the control electrode terminals are provided at least one, and a plurality of the first electrode terminals are arranged on one side and a plurality of the first electrode terminals are arranged on the other side with the control electrode terminals being interposed therebetween, wherein a portion including the control electrode terminals and a plurality of the first electrode terminals located on one side of the control electrode terminals constitute a first transistor portion, and wherein a portion including the control electrode terminals and a plurality of the first electrode terminals located on the other side of the control electrode terminals constitute a second transistor portion. The semiconductor device is quadrangular.

公开(公告)号：US20060076620A1

公开(公告)日：2006-04-13

申请号：US11280464

申请日：2005-11-17

申请人： Hitoshi Akamine ,  Masashi Suzuki ,  Masao Yamane ,  Tetsuaki Adachi

发明人： Hitoshi Akamine ,  Masashi Suzuki ,  Masao Yamane ,  Tetsuaki Adachi

IPC分类号： H01L29/76

CPC分类号： H01L27/0207 ,  H01L23/4824 ,  H01L23/66 ,  H01L24/48 ,  H01L24/49 ,  H01L25/16 ,  H01L27/088 ,  H01L29/0696 ,  H01L29/1083 ,  H01L29/4175 ,  H01L29/41758 ,  H01L29/4238 ,  H01L29/7835 ,  H01L2223/6644 ,  H01L2223/6688 ,  H01L2224/05599 ,  H01L2224/45099 ,  H01L2224/49111 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/13091 ,  H01L2924/19041 ,  H01L2924/19105 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/3025 ,  H03F3/189 ,  H03F3/211 ,  H03F3/601 ,  H03F3/68 ,  H03F3/72 ,  H03F2200/294 ,  H03F2200/372 ,  H01L2224/45015 ,  H01L2924/207

摘要： The present invention provides a semiconductor device comprising a semiconductor substrate, and transistors formed on the semiconductor substrate, wherein control electrode terminals constituting external electrode terminals of the transistors, and first electrode terminals which transmit output signals, are provided on a main surface of the semiconductor substrate, wherein the control electrode terminals are provided at least one, and a plurality of the first electrode terminals are arranged on one side and a plurality of the first electrode terminals are arranged on the other side with the control electrode terminals being interposed therebetween, wherein a portion including the control electrode terminals and a plurality of the first electrode terminals located on one side of the control electrode terminals constitute a first transistor portion, and wherein a portion including the control electrode terminals and a plurality of the first electrode terminals located on the other side of the control electrode terminals constitute a second transistor portion. The semiconductor device is quadrangular.

公开(公告)号：US20050206456A1

公开(公告)日：2005-09-22

申请号：US11130120

申请日：2005-05-17

申请人： Masashi Suzuki ,  Hitoshi Akamine ,  Tetsuaki Adachi ,  Takahiro Sato ,  Masashi Maruyama ,  Susumu Takada

发明人： Masashi Suzuki ,  Hitoshi Akamine ,  Tetsuaki Adachi ,  Takahiro Sato ,  Masashi Maruyama ,  Susumu Takada

IPC分类号： H01L27/04 ,  H01L21/822 ,  H01L27/06 ,  H03F1/30 ,  H03F3/193 ,  H03F3/20 ,  H03F3/213 ,  H03F3/24 ,  H03F3/68 ,  H03G3/30 ,  H04B1/03 ,  H04B1/04

CPC分类号： H01L27/0629 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/49111 ,  H01L2224/49175 ,  H01L2924/13091 ,  H03F1/301 ,  H03F3/193 ,  H03F2200/294 ,  H03F2200/372 ,  H03G3/3042 ,  H03G2201/103 ,  H03G2201/206 ,  H03G2201/307 ,  H03G2201/40 ,  H01L2924/00014 ,  H01L2924/00

摘要： The number of components of a high frequency power amplifier is reduced. A bias resistance ratio is adjusted in accordance with a change in the threshold voltage Vth of a transistor. A high frequency power amplifier has a plurality of amplifying systems. Each of these systems has an input terminal to which a signal to be amplified is supplied, an output terminal, a bias terminal, a plurality of amplifying stages which are sequentially cascaded between the input and output terminals, and a bias circuit connected to the bias terminal and each of the amplifying stages to apply a bias potential to the amplifying stage. The amplifying stage includes a control terminal for receiving an input signal and the bias potential supplied to the stage and a first terminal for transmitting an output signal of the stage.

摘要翻译： 高频功率放大器的组件数量减少。 根据晶体管的阈值电压Vth的变化来调整偏置电阻比。 高频功率放大器具有多个放大系统。 这些系统中的每一个都具有供给要被放大的信号的输入端子，输出端子，偏置端子，在输入和输出端子之间顺序级联的多个放大级，以及连接到偏置电路的偏置电路 端子和每个放大级以向放大级施加偏置电位。 放大级包括用于接收输入信号和提供给级的偏置电位的控制端子和用于发送级的输出信号的第一端子。

公开(公告)号：US06900694B2

公开(公告)日：2005-05-31

申请号：US10799673

申请日：2004-03-15

申请人： Masashi Suzuki ,  Hitoshi Akamine ,  Tetsuaki Adachi ,  Takahiro Sato ,  Masashi Maruyama ,  Susumu Takada

发明人： Masashi Suzuki ,  Hitoshi Akamine ,  Tetsuaki Adachi ,  Takahiro Sato ,  Masashi Maruyama ,  Susumu Takada

IPC分类号： H01L27/04 ,  H01L21/822 ,  H01L27/06 ,  H03F1/30 ,  H03F3/193 ,  H03F3/20 ,  H03F3/213 ,  H03F3/24 ,  H03F3/68 ,  H03G3/30 ,  H04B1/03 ,  H04B1/04 ,  H03G5/16

CPC分类号： H01L27/0629 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/49111 ,  H01L2224/49175 ,  H03F1/301 ,  H03F3/193 ,  H03F2200/294 ,  H03F2200/372 ,  H03G3/3042 ,  H03G2201/103 ,  H03G2201/206 ,  H03G2201/307 ,  H03G2201/40 ,  H01L2924/00014

摘要： The number of components of a high frequency power amplifier is reduced. A bias resistance ratio is adjusted in accordance with a change in the threshold voltage Vth of a transistor. A high frequency power amplifier has a plurality of amplifying systems. Each of these systems has an input terminal to which a signal to be amplified is supplied, an output terminal, a bias terminal, a plurality of amplifying stages which are sequentially cascaded between the input and output terminals, and a bias circuit connected to the bias terminal and each of the amplifying stages to apply a bias potential to the amplifying stage. The amplifying stage includes a control terminal for receiving an input signal and the bias potential supplied to the stage and a first terminal for transmitting an output signal of the stage.