发明授权
- 专利标题: Integrated circuit with protective structure
- 专利标题(中): 具有保护结构的集成电路
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申请号: US12575078申请日: 2009-10-07
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公开(公告)号: US08030776B2公开(公告)日: 2011-10-04
- 发明人: Chen-Hua Yu , Shin-Puu Jeng , Shang-Yun Hou , Hao-Yi Tsai , Hsien Wei Chen , Hsiu-Ping Wei
- 申请人: Chen-Hua Yu , Shin-Puu Jeng , Shang-Yun Hou , Hao-Yi Tsai , Hsien Wei Chen , Hsiu-Ping Wei
- 申请人地址: TW Hsin-Chu
- 专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址: TW Hsin-Chu
- 代理机构: Duane Morris LLP
- 代理商 Steven E. Koffs
- 主分类号: H01L23/48
- IPC分类号: H01L23/48 ; H01L23/52 ; H01L29/40 ; H01L23/053 ; H01L23/12 ; H01L27/10 ; H01L29/74
摘要:
A structure includes a semiconductor substrate having semiconductor devices formed on or in the substrate. An interconnecting metallization structure is formed over and connected to the devices. The interconnecting metallization structure including at least one dielectric layer. A passivation layer is deposited over the interconnecting metallization structure and the dielectric layer. At least one metal contact pad and at least one dummy metal structure are provided in the passivation layer. The contact pad is conductively coupled to at least one of the devices. The dummy metal structure is spaced apart from the contact pad and unconnected to the contact pad and the devices.