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公开(公告)号:US08030776B2
公开(公告)日:2011-10-04
申请号:US12575078
申请日:2009-10-07
申请人: Chen-Hua Yu , Shin-Puu Jeng , Shang-Yun Hou , Hao-Yi Tsai , Hsien Wei Chen , Hsiu-Ping Wei
发明人: Chen-Hua Yu , Shin-Puu Jeng , Shang-Yun Hou , Hao-Yi Tsai , Hsien Wei Chen , Hsiu-Ping Wei
CPC分类号: H01L23/522 , H01L23/585 , H01L24/03 , H01L24/05 , H01L2224/02166 , H01L2224/0401 , H01L2224/05567 , H01L2224/05571 , H01L2224/05599 , H01L2224/05624 , H01L2224/131 , H01L2924/00014 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01019 , H01L2924/01029 , H01L2924/01033 , H01L2924/01074 , H01L2924/014 , H01L2924/14 , H01L2924/19041 , H01L2924/3025 , H01L2924/351 , H01L2224/05552 , H01L2924/00
摘要: A structure includes a semiconductor substrate having semiconductor devices formed on or in the substrate. An interconnecting metallization structure is formed over and connected to the devices. The interconnecting metallization structure including at least one dielectric layer. A passivation layer is deposited over the interconnecting metallization structure and the dielectric layer. At least one metal contact pad and at least one dummy metal structure are provided in the passivation layer. The contact pad is conductively coupled to at least one of the devices. The dummy metal structure is spaced apart from the contact pad and unconnected to the contact pad and the devices.
摘要翻译: 一种结构包括具有形成在衬底上或衬底中的半导体器件的半导体衬底。 互连金属化结构形成在器件上并连接到器件。 互连金属化结构包括至少一个电介质层。 在互连金属化结构和电介质层上沉积钝化层。 在钝化层中提供至少一个金属接触焊盘和至少一个虚拟金属结构。 接触焊盘导电地耦合到至少一个设备。 虚拟金属结构与接触垫间隔开,并且不连接到接触垫和设备。
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公开(公告)号:US08227916B2
公开(公告)日:2012-07-24
申请号:US12757440
申请日:2010-04-09
申请人: Hsiu-Ping Wei , Shin-Puu Jeng , Hao-Yi Tsai , Hsien-Wei Chen , Yu-Wen Liu , Ying-Ju Chen , Tzuan-Horng Liu
发明人: Hsiu-Ping Wei , Shin-Puu Jeng , Hao-Yi Tsai , Hsien-Wei Chen , Yu-Wen Liu , Ying-Ju Chen , Tzuan-Horng Liu
IPC分类号: H01L23/498 , H01L21/3205
CPC分类号: H01L21/76801 , H01L23/3192 , H01L23/522 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L2224/02166 , H01L2224/0345 , H01L2224/03452 , H01L2224/03462 , H01L2224/03464 , H01L2224/0401 , H01L2224/04042 , H01L2224/05008 , H01L2224/05022 , H01L2224/05096 , H01L2224/05124 , H01L2224/05147 , H01L2224/05572 , H01L2224/05624 , H01L2224/05647 , H01L2224/05655 , H01L2224/05666 , H01L2224/05671 , H01L2224/1145 , H01L2224/11452 , H01L2224/11462 , H01L2224/11464 , H01L2224/13116 , H01L2224/13147 , H01L2224/16 , H01L2924/0002 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01024 , H01L2924/01029 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01082 , H01L2924/014 , H01L2924/14 , H01L2924/00014 , H01L2224/05552 , H01L2924/00
摘要: A semiconductor package structure is provided. The structure includes a semiconductor chip having a plurality of interconnect layers formed thereover. A first passivation layer is formed over the plurality of interconnect layers. A stress buffer layer is formed over the first passivation layer. A bonding pad is formed over the stress buffer layer. A second passivation layer is formed over a portion of the bonding pad, the second passivation having at least one opening therein exposing a portion of the bonding pad.
摘要翻译: 提供半导体封装结构。 该结构包括其上形成有多个互连层的半导体芯片。 在多个互连层上形成第一钝化层。 在第一钝化层上形成应力缓冲层。 在应力缓冲层上形成接合焊盘。 在接合焊盘的一部分上形成第二钝化层,第二钝化层具有至少一个开口,露出焊接区的一部分。
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公开(公告)号:US08193639B2
公开(公告)日:2012-06-05
申请号:US12750468
申请日:2010-03-30
申请人: Tzuan-Horng Liu , Shang-Yun Hou , Shin-Puu Jeng , Wei-Cheng Wu , Hsiu-Ping Wei , Chih-Hua Chen , Chen-Cheng Kuo , Chen-Shien Chen , Ming Hung Tseng
发明人: Tzuan-Horng Liu , Shang-Yun Hou , Shin-Puu Jeng , Wei-Cheng Wu , Hsiu-Ping Wei , Chih-Hua Chen , Chen-Cheng Kuo , Chen-Shien Chen , Ming Hung Tseng
IPC分类号: H01L23/485
CPC分类号: H01L23/585 , H01L23/552 , H01L23/562 , H01L24/05 , H01L24/11 , H01L24/13 , H01L2224/0401 , H01L2224/05012 , H01L2224/05572 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05666 , H01L2224/1147 , H01L2224/11912 , H01L2224/13022 , H01L2224/13147 , H01L2224/13655 , H01L2924/00014 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/01079 , H01L2924/014 , H01L2924/14 , H01L2224/05552 , H01L2924/00
摘要: An integrated circuit structure includes a semiconductor chip, a metal pad at a major surface of the semiconductor chip, and an under-bump metallurgy (UBM) over and contacting the metal pad. A metal bump is formed over and electrically connected to the UBM. A dummy pattern is formed at a same level, and formed of a same metallic material, as the metal pad.
摘要翻译: 集成电路结构包括半导体芯片,在半导体芯片的主表面处的金属焊盘和在凸块下金属(UBM)上并与金属焊盘接触的集成电路结构。 金属凸块形成在UBM上并与UBM电连接。 在同一水平上形成虚拟图案,并由与金属垫相同的金属材料形成。
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公开(公告)号:US20110241202A1
公开(公告)日:2011-10-06
申请号:US12750468
申请日:2010-03-30
申请人: Tzuan-Horng Liu , Shang-Yun Hou , Shin-Puu Jeng , Wei-Cheng Wu , Hsiu-Ping Wei , Chih-Hua Chen , Chen-Cheng Kuo , Chen-Shien Chen , Ming Hung Tseng
发明人: Tzuan-Horng Liu , Shang-Yun Hou , Shin-Puu Jeng , Wei-Cheng Wu , Hsiu-Ping Wei , Chih-Hua Chen , Chen-Cheng Kuo , Chen-Shien Chen , Ming Hung Tseng
IPC分类号: H01L23/485
CPC分类号: H01L23/585 , H01L23/552 , H01L23/562 , H01L24/05 , H01L24/11 , H01L24/13 , H01L2224/0401 , H01L2224/05012 , H01L2224/05572 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05666 , H01L2224/1147 , H01L2224/11912 , H01L2224/13022 , H01L2224/13147 , H01L2224/13655 , H01L2924/00014 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/01079 , H01L2924/014 , H01L2924/14 , H01L2224/05552 , H01L2924/00
摘要: An integrated circuit structure includes a semiconductor chip, a metal pad at a major surface of the semiconductor chip, and an under-bump metallurgy (UBM) over and contacting the metal pad. A metal bump is formed over and electrically connected to the UBM. A dummy pattern is formed at a same level, and formed of a same metallic material, as the metal pad.
摘要翻译: 集成电路结构包括半导体芯片,在半导体芯片的主表面处的金属焊盘和在凸块下金属(UBM)上方并接触金属焊盘。 金属凸块形成在UBM上并与UBM电连接。 在同一水平上形成虚拟图案,并由与金属垫相同的金属材料形成。
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公开(公告)号:US08753971B2
公开(公告)日:2014-06-17
申请号:US13427430
申请日:2012-03-22
申请人: Tzuan-Horng Liu , Shang-Yun Hou , Shin-Puu Jeng , Wei-Cheng Wu , Hsiu-Ping Wei , Chih-Hua Chen , Chen-Cheng Kuo , Chen-Shien Chen , Ming Hung Tseng
发明人: Tzuan-Horng Liu , Shang-Yun Hou , Shin-Puu Jeng , Wei-Cheng Wu , Hsiu-Ping Wei , Chih-Hua Chen , Chen-Cheng Kuo , Chen-Shien Chen , Ming Hung Tseng
IPC分类号: H01L21/44
CPC分类号: H01L23/585 , H01L23/552 , H01L23/562 , H01L24/05 , H01L24/11 , H01L24/13 , H01L2224/0401 , H01L2224/05012 , H01L2224/05572 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05666 , H01L2224/1147 , H01L2224/11912 , H01L2224/13022 , H01L2224/13147 , H01L2224/13655 , H01L2924/00014 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/01079 , H01L2924/014 , H01L2924/14 , H01L2224/05552 , H01L2924/00
摘要: A method of forming an integrated circuit structure is provided. The method includes forming a metal pad at a major surface of a semiconductor chip, forming an under-bump metallurgy (UBM) over the metal pad such that the UBM and the metal pad are in contact, forming a dummy pattern at a same level as the metal pad, the dummy pattern formed of a same metallic material as the metal pad and electrically disconnected from the metal pad, and forming a metal bump over the UBM such that the metal bump is electrically connected to the UBM and no metal bump in the semiconductor chip is formed over the dummy pattern.
摘要翻译: 提供一种形成集成电路结构的方法。 该方法包括在半导体芯片的主表面上形成金属焊盘,在金属焊盘上形成凸块下冶金(UBM),使得UBM和金属焊盘接触,形成与 金属焊盘,由与金属焊盘相同的金属材料形成的虚拟图案,并与金属焊盘电气断开,并在UBM上形成金属凸块,使得金属凸块电连接到UBM,并且在金属焊盘中没有金属凸块 在虚拟图案上形成半导体芯片。
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公开(公告)号:US20120178252A1
公开(公告)日:2012-07-12
申请号:US13427430
申请日:2012-03-22
申请人: Tzuan-Horng Liu , Shang-Yun Hou , Shin-Puu Jeng , Wei-Cheng Wu , Hsiu-Ping Wei , Chih-Hua Chen , Chen-Cheng Kuo , Chen-Shien Chen , Ming Hung Tseng
发明人: Tzuan-Horng Liu , Shang-Yun Hou , Shin-Puu Jeng , Wei-Cheng Wu , Hsiu-Ping Wei , Chih-Hua Chen , Chen-Cheng Kuo , Chen-Shien Chen , Ming Hung Tseng
IPC分类号: H01L21/768
CPC分类号: H01L23/585 , H01L23/552 , H01L23/562 , H01L24/05 , H01L24/11 , H01L24/13 , H01L2224/0401 , H01L2224/05012 , H01L2224/05572 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05666 , H01L2224/1147 , H01L2224/11912 , H01L2224/13022 , H01L2224/13147 , H01L2224/13655 , H01L2924/00014 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/01079 , H01L2924/014 , H01L2924/14 , H01L2224/05552 , H01L2924/00
摘要: A method of forming an integrated circuit structure is provided. The method includes forming a metal pad at a major surface of a semiconductor chip, forming an under-bump metallurgy (UBM) over the metal pad such that the UBM and the metal pad are in contact, forming a dummy pattern at a same level as the metal pad, the dummy pattern formed of a same metallic material as the metal pad and electrically disconnected from the metal pad, and forming a metal bump over the UBM such that the metal bump is electrically connected to the UBM and no metal bump in the semiconductor chip is formed over the dummy pattern.
摘要翻译: 提供一种形成集成电路结构的方法。 该方法包括在半导体芯片的主表面上形成金属焊盘,在金属焊盘上形成凸块下冶金(UBM),使得UBM和金属焊盘接触,形成与 金属焊盘,由与金属焊盘相同的金属材料形成的虚拟图案,并与金属焊盘电气断开,并在UBM上形成金属凸块,使得金属凸块电连接到UBM,并且在金属焊盘中没有金属凸块 在虚拟图案上形成半导体芯片。
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公开(公告)号:US20100283148A1
公开(公告)日:2010-11-11
申请号:US12726449
申请日:2010-03-18
申请人: Hao-Yi Tsai , Hsien-Wei Chen , Yu-Wen Liu , Ying-Ju Chen , Hsiu-Ping Wei
发明人: Hao-Yi Tsai , Hsien-Wei Chen , Yu-Wen Liu , Ying-Ju Chen , Hsiu-Ping Wei
IPC分类号: H01L23/485 , H01L21/60
CPC分类号: H01L24/05 , H01L21/768 , H01L21/76877 , H01L23/48 , H01L23/481 , H01L24/03 , H01L24/13 , H01L2224/0401 , H01L2224/05012 , H01L2224/0509 , H01L2224/05092 , H01L2224/05094 , H01L2224/05095 , H01L2224/05096 , H01L2224/05124 , H01L2224/05147 , H01L2224/05552 , H01L2224/05569 , H01L2224/05572 , H01L2224/05599 , H01L2224/131 , H01L2924/00013 , H01L2924/00014 , H01L2924/01002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01029 , H01L2924/01033 , H01L2924/01075 , H01L2924/01078 , H01L2924/014 , H01L2224/13099 , H01L2224/13599 , H01L2224/05099 , H01L2224/29099 , H01L2224/29599 , H01L2924/00012
摘要: An embodiment is a bump bond pad structure that comprises a substrate comprising a top layer, a reinforcement pad disposed on the top layer, an intermediate layer above the top layer, an intermediate connection pad disposed on the intermediate layer, an outer layer above the intermediate layer, and an under bump metal (UBM) connected to the intermediate connection pad through an opening in the outer layer. Further embodiments may comprise a via mechanically coupling the intermediate connection pad to the reinforcement pad. The via may comprise a feature selected from the group consisting of a solid via, a substantially ring-shaped via, or a five by five array of vias. Yet, a further embodiment may comprise a secondary reinforcement pad, and a second via mechanically coupling the reinforcement pad to the secondary reinforcement pad.
摘要翻译: 一个实施例是一种凸块接合焊盘结构,其包括基板,该基板包括顶层,设置在顶层上的加强垫,顶层上的中间层,设置在中间层上的中间连接垫,中间层上方的外层 层和通过外层中的开口连接到中间连接焊盘的凸块下金属(UBM)。 另外的实施例可以包括将中间连接垫机械连接到加强垫的通孔。 通孔可以包括选自由固体通孔,基本上环形的通孔或五个五孔的通孔组成的组的特征。 然而,另一实施例可以包括辅助加强垫,以及将加强垫机械连接到辅助加强垫的第二通孔。
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公开(公告)号:US08405211B2
公开(公告)日:2013-03-26
申请号:US12726449
申请日:2010-03-18
申请人: Hao-Yi Tsai , Hsien-Wei Chen , Yu-Wen Liu , Ying-Ju Chen , Hsiu-Ping Wei
发明人: Hao-Yi Tsai , Hsien-Wei Chen , Yu-Wen Liu , Ying-Ju Chen , Hsiu-Ping Wei
IPC分类号: H01L23/485
CPC分类号: H01L24/05 , H01L21/768 , H01L21/76877 , H01L23/48 , H01L23/481 , H01L24/03 , H01L24/13 , H01L2224/0401 , H01L2224/05012 , H01L2224/0509 , H01L2224/05092 , H01L2224/05094 , H01L2224/05095 , H01L2224/05096 , H01L2224/05124 , H01L2224/05147 , H01L2224/05552 , H01L2224/05569 , H01L2224/05572 , H01L2224/05599 , H01L2224/131 , H01L2924/00013 , H01L2924/00014 , H01L2924/01002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01029 , H01L2924/01033 , H01L2924/01075 , H01L2924/01078 , H01L2924/014 , H01L2224/13099 , H01L2224/13599 , H01L2224/05099 , H01L2224/29099 , H01L2224/29599 , H01L2924/00012
摘要: An embodiment is a bump bond pad structure that comprises a substrate comprising a top layer, a reinforcement pad disposed on the top layer, an intermediate layer above the top layer, an intermediate connection pad disposed on the intermediate layer, an outer layer above the intermediate layer, and an under bump metal (UBM) connected to the intermediate connection pad through an opening in the outer layer. Further embodiments may comprise a via mechanically coupling the intermediate connection pad to the reinforcement pad. The via may comprise a feature selected from the group consisting of a solid via, a substantially ring-shaped via, or a five by five array of vias. Yet, a further embodiment may comprise a secondary reinforcement pad, and a second via mechanically coupling the reinforcement pad to the secondary reinforcement pad.
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