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发明授权
US08035149B2 Nonvolatile memory devices with oblique charge storage regions and methods of forming the same 失效
具有倾斜电荷存储区域的非易失性存储器件及其形成方法

Nonvolatile memory devices with oblique charge storage regions and methods of forming the same
摘要：
A nonvolatile memory device includes an active region defined by a device isolation layer in a semiconductor substrate, a word line passing over the active region and a charge storage region defined by a crossing of the active region and the word line and disposed between the active region and the word line. The charge storage region is disposed at an oblique angle with respect to the word line.
摘要（中）：

非易失性存储器件包括由半导体衬底中的器件隔离层限定的有源区，通过有源区的字线和由有源区和字线的交叉限定的电荷存储区，并且设置在有源区 和字线。 电荷存储区域相对于字线倾斜设置。

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