Invention Grant
US08035149B2 Nonvolatile memory devices with oblique charge storage regions and methods of forming the same
失效
具有倾斜电荷存储区域的非易失性存储器件及其形成方法
- Patent Title: Nonvolatile memory devices with oblique charge storage regions and methods of forming the same
- Patent Title (中): 具有倾斜电荷存储区域的非易失性存储器件及其形成方法
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Application No.: US12913865Application Date: 2010-10-28
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Publication No.: US08035149B2Publication Date: 2011-10-11
- Inventor: Woon-Kyung Lee
- Applicant: Woon-Kyung Lee
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel Sibley & Sajovec
- Priority: KR10-2006-0023197 20060313
- Main IPC: H01L29/76
- IPC: H01L29/76
Abstract:
A nonvolatile memory device includes an active region defined by a device isolation layer in a semiconductor substrate, a word line passing over the active region and a charge storage region defined by a crossing of the active region and the word line and disposed between the active region and the word line. The charge storage region is disposed at an oblique angle with respect to the word line.
Public/Granted literature
- US20110037112A1 NONVOLATILE MEMORY DEVICES WITH OBLIQUE CHARGE STORAGE REGIONS AND METHODS OF FORMING THE SAME Public/Granted day:2011-02-17
Information query
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