发明授权
- 专利标题: Semiconductor device
- 专利标题(中): 半导体器件
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申请号: US11624767申请日: 2007-01-19
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公开(公告)号: US08044520B2公开(公告)日: 2011-10-25
- 发明人: Noboru Akiyama , Takayuki Hashimoto , Masaki Shiraishi , Tetsuya Kawashima , Koji Tateno , Nobuyoshi Matsuura
- 申请人: Noboru Akiyama , Takayuki Hashimoto , Masaki Shiraishi , Tetsuya Kawashima , Koji Tateno , Nobuyoshi Matsuura
- 申请人地址: JP Kanagawa
- 专利权人: Renesas Electronics Corporation
- 当前专利权人: Renesas Electronics Corporation
- 当前专利权人地址: JP Kanagawa
- 代理机构: Antonelli, Terry, Stout & Kraus, LLP.
- 优先权: JP2006-048577 20060224
- 主分类号: H01L23/52
- IPC分类号: H01L23/52 ; H01L29/40
摘要:
A power supply capable of reducing loss of large current and high frequency. In an MCM for power supply in which a high-side power MOSFET chip, a low-side power MOSFET chip and a driver IC chip driving them are sealed in one sealing material (a capsulating insulation resin), a wiring length of a wiring DL connecting an output terminal of the driver IC chip to a gate terminal of the low-side power MOSFET chip or a source terminal is made shorter than a wiring length of a wiring DH connecting the output terminal of the driver IC chip to a gate terminal of the high-side power MOSFET chip or a source terminal. Further, the number of the wiring DL is made larger than the number of the wiring DH.
公开/授权文献
- US20070200537A1 SEMICONDUCTOR DEVICE 公开/授权日:2007-08-30
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