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公开(公告)号:US20070200537A1
公开(公告)日:2007-08-30
申请号:US11624767
申请日:2007-01-19
申请人: Noboru Akiyama , Takayuki Hashimoto , Masaki Shiraishi , Tetsuya Kawashima , Koji Tateno , Nobuyoshi Matsuura
发明人: Noboru Akiyama , Takayuki Hashimoto , Masaki Shiraishi , Tetsuya Kawashima , Koji Tateno , Nobuyoshi Matsuura
CPC分类号: H01L25/16 , H01L24/37 , H01L24/40 , H01L2224/05554 , H01L2224/37124 , H01L2224/37147 , H01L2224/40245 , H01L2224/40247 , H01L2224/45144 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2224/48472 , H01L2224/49171 , H01L2224/49175 , H01L2224/73221 , H01L2224/8385 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/1306 , H01L2924/13091 , H01L2924/181 , H01L2924/19105 , H01L2924/30107 , H02M3/1588 , H03K17/08142 , H03K17/162 , H03K17/6871 , H03K2217/0036 , Y02B70/1466 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要: A power supply capable of reducing loss of large current and high frequency. In an MCM for power supply in which a high-side power MOSFET chip, a low-side power MOSFET chip and a driver IC chip driving them are sealed in one sealing material (a capsulating insulation resin), a wiring length of a wiring DL connecting an output terminal of the driver IC chip to a gate terminal of the low-side power MOSFET chip or a source terminal is made shorter than a wiring length of a wiring DH connecting the output terminal of the driver IC chip to a gate terminal of the high-side power MOSFET chip or a source terminal. Further, the number of the wiring DL is made larger than the number of the wiring DH.
摘要翻译: 一种能够减少大电流和高频损耗的电源。 在用于电源的MCM中,高边功率MOSFET芯片,低边功率MOSFET芯片和驱动IC芯片驱动它们被密封在一个密封材料(封装绝缘树脂)中,布线DL的布线长度 将驱动IC芯片的输出端子与低边功率MOSFET芯片的栅极端子或源极端子连接的距离比连接驱动器IC芯片的输出端子的栅极端子的布线长度短 高端功率MOSFET芯片或源极端子。 此外,使布线数量DL大于布线数量DH。
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公开(公告)号:US08044520B2
公开(公告)日:2011-10-25
申请号:US11624767
申请日:2007-01-19
申请人: Noboru Akiyama , Takayuki Hashimoto , Masaki Shiraishi , Tetsuya Kawashima , Koji Tateno , Nobuyoshi Matsuura
发明人: Noboru Akiyama , Takayuki Hashimoto , Masaki Shiraishi , Tetsuya Kawashima , Koji Tateno , Nobuyoshi Matsuura
CPC分类号: H01L25/16 , H01L24/37 , H01L24/40 , H01L2224/05554 , H01L2224/37124 , H01L2224/37147 , H01L2224/40245 , H01L2224/40247 , H01L2224/45144 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2224/48472 , H01L2224/49171 , H01L2224/49175 , H01L2224/73221 , H01L2224/8385 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/1306 , H01L2924/13091 , H01L2924/181 , H01L2924/19105 , H01L2924/30107 , H02M3/1588 , H03K17/08142 , H03K17/162 , H03K17/6871 , H03K2217/0036 , Y02B70/1466 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要: A power supply capable of reducing loss of large current and high frequency. In an MCM for power supply in which a high-side power MOSFET chip, a low-side power MOSFET chip and a driver IC chip driving them are sealed in one sealing material (a capsulating insulation resin), a wiring length of a wiring DL connecting an output terminal of the driver IC chip to a gate terminal of the low-side power MOSFET chip or a source terminal is made shorter than a wiring length of a wiring DH connecting the output terminal of the driver IC chip to a gate terminal of the high-side power MOSFET chip or a source terminal. Further, the number of the wiring DL is made larger than the number of the wiring DH.
摘要翻译: 一种能够减少大电流和高频损耗的电源。 在用于电源的MCM中,高边功率MOSFET芯片,低边功率MOSFET芯片和驱动IC芯片驱动它们被密封在一个密封材料(封装绝缘树脂)中,布线DL的布线长度 将驱动IC芯片的输出端子与低边功率MOSFET芯片的栅极端子或源极端子连接的时间短于连接驱动器IC芯片的输出端子与栅极端子的布线DH的布线长度 高端功率MOSFET芯片或源极端子。 此外,使布线数量DL大于布线数量DH。
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公开(公告)号:US20120273893A1
公开(公告)日:2012-11-01
申请号:US13548265
申请日:2012-07-13
申请人: Takayuki Hashimoto , Nobuyoshi Matsuura , Masaki Shiraishi , Yukihiro Satou , Tetsuya Kawashima
发明人: Takayuki Hashimoto , Nobuyoshi Matsuura , Masaki Shiraishi , Yukihiro Satou , Tetsuya Kawashima
IPC分类号: H01L27/088
CPC分类号: H01L25/16 , H01L25/074 , H01L2224/05554 , H01L2224/0603 , H01L2224/40245 , H01L2224/48091 , H01L2224/48137 , H01L2224/4903 , H01L2224/49175 , H01L2924/00014 , H01L2924/12032 , H01L2924/13091 , H01L2924/181 , H01L2924/30107 , H01L2924/3011 , H02M3/1588 , Y02B70/1466 , H01L2924/00 , H01L2924/00012 , H01L2224/37099
摘要: A semiconductor device capable of reducing an inductance is provided. In the semiconductor device in which a rectification MOSFET, a commutation MOSFET, and a driving IC that drives these MOSFETs are mounted on one package, the rectification MOSFET, a metal plate, and the commutation MOSFET are laminated. A current of a main circuit flows from a back surface of the package to a front surface thereof. The metal plate is connected to an output terminal via a wiring in the package. Wire bondings are used for wirings for connecting the driving IC, the rectification MOSFET, and the commutation MOSFET, all terminals being placed on the same plane. For this reason, the inductance becomes small and also a power source loss and a spike voltage are reduced.
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公开(公告)号:US07480163B2
公开(公告)日:2009-01-20
申请号:US11585226
申请日:2006-10-24
申请人: Takayuki Hashimoto , Nobuyoshi Matsuura , Masaki Shiraishi , Yukihiro Satou , Tetsuya Kawashima
发明人: Takayuki Hashimoto , Nobuyoshi Matsuura , Masaki Shiraishi , Yukihiro Satou , Tetsuya Kawashima
IPC分类号: H02M1/00
CPC分类号: H01L25/16 , H01L25/074 , H01L2224/05554 , H01L2224/0603 , H01L2224/40245 , H01L2224/48091 , H01L2224/48137 , H01L2224/4903 , H01L2224/49175 , H01L2924/00014 , H01L2924/12032 , H01L2924/13091 , H01L2924/181 , H01L2924/30107 , H01L2924/3011 , H02M3/1588 , Y02B70/1466 , H01L2924/00 , H01L2924/00012 , H01L2224/37099
摘要: A semiconductor device capable of reducing an inductance is provided. In the semiconductor device in which a rectification MOSFET, a commutation MOSFET, and a driving IC that drives these MOSFETs are mounted on one package, the rectification MOSFET, a metal plate, and the commutation MOSFET are laminated. A current of a main circuit flows from a back surface of the package to a front surface thereof. The metal plate is connected to an output terminal via a wiring in the package. Wire bondings are used for wirings for connecting the driving IC, the rectification MOSFET, and the commutation MOSFET, all terminals being placed on the same plane. For this reason, the inductance becomes small and also a power source loss and a spike voltage are reduced.
摘要翻译: 提供能够减小电感的半导体器件。 在其中将整流MOSFET,换向MOSFET和驱动这些MOSFET的驱动IC安装在一个封装上的半导体器件中,整流MOSFET,金属板和换向MOSFET被层压。 主电路的电流从封装的后表面流向其前表面。 金属板通过封装中的布线连接到输出端子。 引线键合用于连接驱动IC,整流MOSFET和换向MOSFET,所有端子都放置在同一平面上。 因此,电感变小,电源损耗和尖峰电压也降低。
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公开(公告)号:US08237493B2
公开(公告)日:2012-08-07
申请号:US13243642
申请日:2011-09-23
申请人: Takayuki Hashimoto , Nobuyoshi Matsuura , Masaki Shiraishi , Yukihiro Satou , Tetsuya Kawashima
发明人: Takayuki Hashimoto , Nobuyoshi Matsuura , Masaki Shiraishi , Yukihiro Satou , Tetsuya Kawashima
IPC分类号: H01L25/00
CPC分类号: H01L25/16 , H01L25/074 , H01L2224/05554 , H01L2224/0603 , H01L2224/40245 , H01L2224/48091 , H01L2224/48137 , H01L2224/4903 , H01L2224/49175 , H01L2924/00014 , H01L2924/12032 , H01L2924/13091 , H01L2924/181 , H01L2924/30107 , H01L2924/3011 , H02M3/1588 , Y02B70/1466 , H01L2924/00 , H01L2924/00012 , H01L2224/37099
摘要: A semiconductor device capable of reducing an inductance is provided. In the semiconductor device in which a rectification MOSFET, a commutation MOSFET, and a driving IC that drives these MOSFETs are mounted on one package, the rectification MOSFET, a metal plate, and the commutation MOSFET are laminated. A current of a main circuit flows from a back surface of the package to a front surface thereof. The metal plate is connected to an output terminal via a wiring in the package. Wire bondings are used for wirings for connecting the driving IC, the rectification MOSFET, and the commutation MOSFET, all terminals being placed on the same plane. For this reason, the inductance becomes small and also a power source loss and a spike voltage are reduced.
摘要翻译: 提供能够减小电感的半导体器件。 在其中将整流MOSFET,换向MOSFET和驱动这些MOSFET的驱动IC安装在一个封装上的半导体器件中,整流MOSFET,金属板和换向MOSFET被层压。 主电路的电流从封装的后表面流向其前表面。 金属板通过封装中的布线连接到输出端子。 引线键合用于连接驱动IC,整流MOSFET和换向MOSFET,所有端子都放置在同一平面上。 因此,电感变小,电源损耗和尖峰电压也降低。
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公开(公告)号:US20070090814A1
公开(公告)日:2007-04-26
申请号:US11585226
申请日:2006-10-24
申请人: Takayuki Hashimoto , Nobuyoshi Matsuura , Masaki Shiraishi , Yukihiro Satou , Tetsuya Kawashima
发明人: Takayuki Hashimoto , Nobuyoshi Matsuura , Masaki Shiraishi , Yukihiro Satou , Tetsuya Kawashima
IPC分类号: G05F1/613
CPC分类号: H01L25/16 , H01L25/074 , H01L2224/05554 , H01L2224/0603 , H01L2224/40245 , H01L2224/48091 , H01L2224/48137 , H01L2224/4903 , H01L2224/49175 , H01L2924/00014 , H01L2924/12032 , H01L2924/13091 , H01L2924/181 , H01L2924/30107 , H01L2924/3011 , H02M3/1588 , Y02B70/1466 , H01L2924/00 , H01L2924/00012 , H01L2224/37099
摘要: A semiconductor device capable of reducing an inductance is provided. In the semiconductor device in which a rectification MOSFET, a commutation MOSFET, and a driving IC that drives these MOSFETs are mounted on one package, the rectification MOSFET, a metal plate, and the commutation MOSFET are laminated. A current of a main circuit flows from a back surface of the package to a front surface thereof. The metal plate is connected to an output terminal via a wiring in the package. Wire bondings are used for wirings for connecting the driving IC, the rectification MOSFET, and the commutation MOSFET, all terminals being placed on the same plane. For this reason, the inductance becomes small and also a power source loss and a spike voltage are reduced.
摘要翻译: 提供能够减小电感的半导体器件。 在其中将整流MOSFET,换向MOSFET和驱动这些MOSFET的驱动IC安装在一个封装上的半导体器件中,整流MOSFET,金属板和换向MOSFET被层压。 主电路的电流从封装的后表面流向其前表面。 金属板通过封装中的布线连接到输出端子。 引线键合用于连接驱动IC,整流MOSFET和换向MOSFET,所有端子都放置在同一平面上。 因此,电感变小,电源损耗和尖峰电压也降低。
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公开(公告)号:US20100321969A1
公开(公告)日:2010-12-23
申请号:US12851849
申请日:2010-08-06
申请人: Takayuki Hashimoto , Nobuyoshi Matsuura , Masaki Shiraishi , Yukihiro Satou , Tetsuya Kawashima
发明人: Takayuki Hashimoto , Nobuyoshi Matsuura , Masaki Shiraishi , Yukihiro Satou , Tetsuya Kawashima
IPC分类号: H02M1/00
CPC分类号: H01L25/16 , H01L25/074 , H01L2224/05554 , H01L2224/0603 , H01L2224/40245 , H01L2224/48091 , H01L2224/48137 , H01L2224/4903 , H01L2224/49175 , H01L2924/00014 , H01L2924/12032 , H01L2924/13091 , H01L2924/181 , H01L2924/30107 , H01L2924/3011 , H02M3/1588 , Y02B70/1466 , H01L2924/00 , H01L2924/00012 , H01L2224/37099
摘要: A semiconductor device capable of reducing an inductance is provided. In the semiconductor device in which a rectification MOSFET, a commutation MOSFET, and a driving IC that drives these MOSFETs are mounted on one package, the rectification MOSFET, a metal plate, and the commutation MOSFET are laminated. A current of a main circuit flows from a back surface of the package to a front surface thereof. The metal plate is connected to an output terminal via a wiring in the package. Wire bondings are used for wirings for connecting the driving IC, the rectification MOSFET, and the commutation MOSFET, all terminals being placed on the same plane. For this reason, the inductance becomes small and also a power source loss and a spike voltage are reduced.
摘要翻译: 提供能够减小电感的半导体器件。 在其中将整流MOSFET,换向MOSFET和驱动这些MOSFET的驱动IC安装在一个封装上的半导体器件中,整流MOSFET,金属板和换向MOSFET被层压。 主电路的电流从封装的后表面流向其前表面。 金属板通过封装中的布线连接到输出端子。 引线键合用于连接驱动IC,整流MOSFET和换向MOSFET,所有端子都放置在同一平面上。 因此,电感变小,电源损耗和尖峰电压也降低。
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公开(公告)号:US20090154209A1
公开(公告)日:2009-06-18
申请号:US12349106
申请日:2009-01-06
申请人: Takayuki Hashimoto , Nobuyoshi Matsuura , Masaki Shiraishi , Yukihiro Satou , Tetsuya Kawashima
发明人: Takayuki Hashimoto , Nobuyoshi Matsuura , Masaki Shiraishi , Yukihiro Satou , Tetsuya Kawashima
IPC分类号: H02M1/00
CPC分类号: H01L25/16 , H01L25/074 , H01L2224/05554 , H01L2224/0603 , H01L2224/40245 , H01L2224/48091 , H01L2224/48137 , H01L2224/4903 , H01L2224/49175 , H01L2924/00014 , H01L2924/12032 , H01L2924/13091 , H01L2924/181 , H01L2924/30107 , H01L2924/3011 , H02M3/1588 , Y02B70/1466 , H01L2924/00 , H01L2924/00012 , H01L2224/37099
摘要: A semiconductor device capable of reducing an inductance is provided. In the semiconductor device in which a rectification MOSFET, a commutation MOSFET, and a driving IC that drives these MOSFETs are mounted on one package, the rectification MOSFET, a metal plate, and the commutation MOSFET are laminated. A current of a main circuit flows from a back surface of the package to a front surface thereof. The metal plate is connected to an output terminal via a wiring in the package. Wire bondings are used for wirings for connecting the driving IC, the rectification MOSFET, and the commutation MOSFET, all terminals being placed on the same plane. For this reason, the inductance becomes small and also a power source loss and a spike voltage are reduced.
摘要翻译: 提供能够减小电感的半导体器件。 在其中将整流MOSFET,换向MOSFET和驱动这些MOSFET的驱动IC安装在一个封装上的半导体器件中,整流MOSFET,金属板和换向MOSFET被层压。 主电路的电流从封装的后表面流向其前表面。 金属板通过封装中的布线连接到输出端子。 引线键合用于连接驱动IC,整流MOSFET和换向MOSFET,所有端子都放置在同一平面上。 因此,电感变小,电源损耗和尖峰电压也降低。
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公开(公告)号:US08422261B2
公开(公告)日:2013-04-16
申请号:US13548265
申请日:2012-07-13
申请人: Takayuki Hashimoto , Nobuyoshi Matsuura , Masaki Shiraishi , Yukihiro Satou , Tetsuya Kawashima
发明人: Takayuki Hashimoto , Nobuyoshi Matsuura , Masaki Shiraishi , Yukihiro Satou , Tetsuya Kawashima
IPC分类号: H02M1/00
CPC分类号: H01L25/16 , H01L25/074 , H01L2224/05554 , H01L2224/0603 , H01L2224/40245 , H01L2224/48091 , H01L2224/48137 , H01L2224/4903 , H01L2224/49175 , H01L2924/00014 , H01L2924/12032 , H01L2924/13091 , H01L2924/181 , H01L2924/30107 , H01L2924/3011 , H02M3/1588 , Y02B70/1466 , H01L2924/00 , H01L2924/00012 , H01L2224/37099
摘要: A semiconductor device capable of reducing an inductance is provided. In the semiconductor device in which a rectification MOSFET, a commutation MOSFET, and a driving IC that drives these MOSFETs are mounted on one package, the rectification MOSFET, a metal plate, and the commutation MOSFET are laminated. A current of a main circuit flows from a back surface of the package to a front surface thereof. The metal plate is connected to an output terminal via a wiring in the package. Wire bondings are used for wirings for connecting the driving IC, the rectification MOSFET, and the commutation MOSFET, all terminals being placed on the same plane. For this reason, the inductance becomes small and also a power source loss and a spike voltage are reduced.
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公开(公告)号:US08067979B2
公开(公告)日:2011-11-29
申请号:US12851849
申请日:2010-08-06
申请人: Takayuki Hashimoto , Nobuyoshi Matsuura , Masaki Shiraishi , Yukihiro Satou , Tetsuya Kawashima
发明人: Takayuki Hashimoto , Nobuyoshi Matsuura , Masaki Shiraishi , Yukihiro Satou , Tetsuya Kawashima
IPC分类号: H01L25/00
CPC分类号: H01L25/16 , H01L25/074 , H01L2224/05554 , H01L2224/0603 , H01L2224/40245 , H01L2224/48091 , H01L2224/48137 , H01L2224/4903 , H01L2224/49175 , H01L2924/00014 , H01L2924/12032 , H01L2924/13091 , H01L2924/181 , H01L2924/30107 , H01L2924/3011 , H02M3/1588 , Y02B70/1466 , H01L2924/00 , H01L2924/00012 , H01L2224/37099
摘要: A semiconductor device capable of reducing an inductance is provided. In the semiconductor device in which a rectification MOSFET, a commutation MOSFET, and a driving IC that drives these MOSFETs are mounted on one package, the rectification MOSFET, a metal plate, and the commutation MOSFET are laminated. A current of a main circuit flows from a back surface of the package to a front surface thereof. The metal plate is connected to an output terminal via a wiring in the package. Wire bondings are used for wirings for connecting the driving IC, the rectification MOSFET, and the commutation MOSFET, all terminals being placed on the same plane. For this reason, the inductance becomes small and also a power source loss and a spike voltage are reduced.
摘要翻译: 提供能够减小电感的半导体器件。 在其中将整流MOSFET,换向MOSFET和驱动这些MOSFET的驱动IC安装在一个封装上的半导体器件中,整流MOSFET,金属板和换向MOSFET被层压。 主电路的电流从封装的后表面流向其前表面。 金属板通过封装中的布线连接到输出端子。 引线键合用于连接驱动IC,整流MOSFET和换向MOSFET,所有端子都放置在同一平面上。 因此,电感变小,电源损耗和尖峰电压也降低。
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