发明授权
- 专利标题: Photolithographic reticles with electrostatic discharge protection structures
- 专利标题(中): 具有静电放电保护结构的光刻掩模版
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申请号: US12263413申请日: 2008-10-31
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公开(公告)号: US08057964B2公开(公告)日: 2011-11-15
- 发明人: Che Ta Hsu , Peter J. McElheny , Jeffrey T. Watt
- 申请人: Che Ta Hsu , Peter J. McElheny , Jeffrey T. Watt
- 申请人地址: US CA San Jose
- 专利权人: Altera Corporation
- 当前专利权人: Altera Corporation
- 当前专利权人地址: US CA San Jose
- 代理机构: Treyz Law Group
- 代理商 G. Victor Treyz; Nancy Y. Ru
- 主分类号: G03F1/00
- IPC分类号: G03F1/00 ; H01L23/62
摘要:
Photolithographic reticles are provided that have electrostatic discharge protection features. A photolithographic reticle may be formed from metal structures such as chrome structures on a transparent substrate such as fused silica. Some of the metal structures on the reticle correspond to transistors and other electronic devices on integrated circuits that are fabricated when using the reticles in a step-and-repeat lithography tool. These metal device structures may be susceptible to damage due to electrostatic charge build up during handling of the reticle. To prevent damage, dummy ring structures are formed in the vicinity of device structures. The dummy ring structures may be constructed to be more sensitive to electrostatic discharge than the device structures, so that in the event of an electrostatic discharge, damage is confined to portions of the reticle that are not critical.
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