发明授权
- 专利标题: EMR sensor and transistor formed on the same substrate
- 专利标题(中): EMR传感器和晶体管形成在同一基板上
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申请号: US11549879申请日: 2006-10-16
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公开(公告)号: US08059373B2公开(公告)日: 2011-11-15
- 发明人: Liesl Folks , Robert E. Fontana, Jr. , Bruce A. Gurney , Klaas B. Klaassen , Stefan Maat
- 申请人: Liesl Folks , Robert E. Fontana, Jr. , Bruce A. Gurney , Klaas B. Klaassen , Stefan Maat
- 申请人地址: NL Amsterdam
- 专利权人: Hitachi Global Storage Technologies Netherlands, B.V.
- 当前专利权人: Hitachi Global Storage Technologies Netherlands, B.V.
- 当前专利权人地址: NL Amsterdam
- 代理机构: Duft Bornsen & Fishman, LLP
- 主分类号: G11B5/33
- IPC分类号: G11B5/33
摘要:
Magnetic sensing chips and methods of fabricating the magnetic sensing chips are disclosed. A magnetic sensing chip as described herein includes an EMR sensor formed on a substrate from multiple semiconductor layers. One or more of the semiconductor layers form a quantum well comprising a two-dimensional electron gas (2DEG) or hole gas (2DHG). The magnetic sensing chip also includes one or more transistors formed on the substrate from the multiple semiconductor layers. The transistor(s) likewise include a quantum well comprising a 2DEG or 2DHG. The EMR sensor and the transistor(s) are connected by one or more connections so that the transistor(s) amplifies data signals from the EMR sensor.
公开/授权文献
- US20080088982A1 EMR SENSOR AND TRANSISTOR FORMED ON THE SAME SUBSTRATE 公开/授权日:2008-04-17
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