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    EMR sensor and transistor formed on the same substrate
    1.
    发明授权
    EMR sensor and transistor formed on the same substrate 有权
    EMR传感器和晶体管形成在同一基板上

    公开(公告)号：US08059373B2

    公开(公告)日：2011-11-15

    申请号：US11549879

    申请日：2006-10-16

    申请人： Liesl Folks ,  Robert E. Fontana, Jr. ,  Bruce A. Gurney ,  Klaas B. Klaassen ,  Stefan Maat

    发明人： Liesl Folks ,  Robert E. Fontana, Jr. ,  Bruce A. Gurney ,  Klaas B. Klaassen ,  Stefan Maat

    IPC分类号： G11B5/33

    CPC分类号： G11B5/3993

    摘要： Magnetic sensing chips and methods of fabricating the magnetic sensing chips are disclosed. A magnetic sensing chip as described herein includes an EMR sensor formed on a substrate from multiple semiconductor layers. One or more of the semiconductor layers form a quantum well comprising a two-dimensional electron gas (2DEG) or hole gas (2DHG). The magnetic sensing chip also includes one or more transistors formed on the substrate from the multiple semiconductor layers. The transistor(s) likewise include a quantum well comprising a 2DEG or 2DHG. The EMR sensor and the transistor(s) are connected by one or more connections so that the transistor(s) amplifies data signals from the EMR sensor.

    摘要翻译： 公开了磁感测芯片和制造磁感测芯片的方法。 如本文所述的磁传感芯片包括形成在来自多个半导体层的衬底上的EMR传感器。 一个或多个半导体层形成包含二维电子气（2DEG）或空穴气体（2DHG）的量子阱。 磁感测芯片还包括从多个半导体层形成在衬底上的一个或多个晶体管。 晶体管同样包括包含2DEG或2DHG的量子阱。 EMR传感器和晶体管通过一个或多个连接连接，使得晶体管放大来自EMR传感器的数据信号。

    EMR SENSOR AND TRANSISTOR FORMED ON THE SAME SUBSTRATE
    2.
    发明申请
    EMR SENSOR AND TRANSISTOR FORMED ON THE SAME SUBSTRATE 有权
    EMR传感器和晶体管在相同的基板上形成

    公开(公告)号：US20080088982A1

    公开(公告)日：2008-04-17

    申请号：US11549879

    申请日：2006-10-16

    申请人： Liesl Folks ,  Robert E. Fontana ,  Bruce A. Gurney ,  Klaas B. Klaassen ,  Stefan Maat

    发明人： Liesl Folks ,  Robert E. Fontana ,  Bruce A. Gurney ,  Klaas B. Klaassen ,  Stefan Maat

    IPC分类号： G11B5/33

    CPC分类号： G11B5/3993

    摘要： Magnetic sensing chips and methods of fabricating the magnetic sensing chips are disclosed. A magnetic sensing chip as described herein includes an EMR sensor formed on a substrate from multiple semiconductor layers. One or more of the semiconductor layers form a quantum well comprising a two-dimensional electron gas (2DEG) or hole gas (2DHG). The magnetic sensing chip also includes one or more transistors formed on the substrate from the multiple semiconductor layers. The transistor(s) likewise include a quantum well comprising a 2DEG or 2DHG. The EMR sensor and the transistor(s) are connected by one or more connections so that the transistor(s) amplifies data signals from the EMR sensor.

    摘要翻译： 公开了磁感测芯片和制造磁感测芯片的方法。 如本文所述的磁传感芯片包括形成在来自多个半导体层的衬底上的EMR传感器。 一个或多个半导体层形成包含二维电子气（2DEG）或空穴气体（2DHG）的量子阱。 磁感测芯片还包括从多个半导体层形成在衬底上的一个或多个晶体管。 晶体管同样包括包含2DEG或2DHG的量子阱。 EMR传感器和晶体管通过一个或多个连接连接，使得晶体管放大来自EMR传感器的数据信号。

    EMR structure with bias control and enhanced linearity of signal
    5.
    发明授权
    EMR structure with bias control and enhanced linearity of signal 失效
    EMR结构具有偏置控制和增强的信号线性度

    公开(公告)号：US07466521B2

    公开(公告)日：2008-12-16

    申请号：US11411606

    申请日：2006-04-25

    申请人： Thomas Dudley Boone, Jr. ,  Liesl Folks ,  Stefan Maat

    发明人： Thomas Dudley Boone, Jr. ,  Liesl Folks ,  Stefan Maat

    IPC分类号： G11B5/39

    CPC分类号： G11B5/3993 ,  G11B2005/0016 ,  G11C11/14

    摘要： An extraordinary magnetoresistive device EMR having a discontinuous shunt structure. The discontinuous shunt structure improves the linearity of response of the EMR device. The EMR device includes a EMR heterostructure that includes an EMR active layer. The heterostructure can include first, second and third semiconductor layers, with the second layer being sandwiched between the first and third layers. The middle, or second semiconductor layer provides a two dimensional electron gas. The heterostructure has first and second opposed sides, with a pair of voltage leads and a pair of current leads connected with the first side of the structure. The discontinuous shunt structure is connected with the second side of the structure and may be in the form of a series of discontinuous, electrically conductive elements, such as semi-spherical gold elements.

    摘要翻译： 具有不连续分流结构的非凡磁阻器件EMR。 不连续的分流结构提高了EMR器件的响应线性。 EMR器件包括EMR异质结构，其包括EMR有源层。 异质结构可以包括第一，第二和第三半导体层，第二层夹在第一和第三层之间。 中间或第二半导体层提供二维电子气。 异质结构具有第一和第二相对侧，一对电压引线和一对与结构的第一侧连接的电流引线。 不连续的分流结构与结构的第二侧连接，并且可以是一系列不连续的导电元件，例如半球状金元素的形式。

    Novel EMR structure with bias control and enhanced linearity of signal
    6.
    发明申请
    Novel EMR structure with bias control and enhanced linearity of signal 失效
    具有偏置控制和增强信号线性度的新型EMR结构

    公开(公告)号：US20070247763A1

    公开(公告)日：2007-10-25

    申请号：US11411606

    申请日：2006-04-25

    申请人： Thomas Boone ,  Liesl Folks ,  Stefan Maat

    发明人： Thomas Boone ,  Liesl Folks ,  Stefan Maat

    IPC分类号： G11B5/33

    CPC分类号： G11B5/3993 ,  G11B2005/0016 ,  G11C11/14

    摘要： An extraordinary magnetoresistive device EMR having a discontinuous shunt structure. The discontinuous shunt structure improves the linearity of response of the EMR device. The EMR device includes a EMR heterostructure that includes an EMR active layer. The heterostructure can include first, second and third semiconductor layers, with the second layer being sandwiched between the first and third layers. The middle, or second semiconductor layer provides a two dimensional electron gas. The heterostructure has first and second opposed sides, with a pair of voltage leads and a pair of current leads connected with the first side of the structure. The discontinuous shunt structure is connected with the second side of the structure and may be in the form of a series of discontinuous, electrically conductive elements, such as semi-spherical gold elements.

    摘要翻译： 具有不连续分流结构的非凡磁阻器件EMR。 不连续的分流结构提高了EMR器件的响应线性。 EMR器件包括EMR异质结构，其包括EMR有源层。 异质结构可以包括第一，第二和第三半导体层，第二层夹在第一和第三层之间。 中间或第二半导体层提供二维电子气。 异质结构具有第一和第二相对侧，一对电压引线和一对与结构的第一侧连接的电流引线。 不连续的分流结构与结构的第二侧连接，并且可以是一系列不连续的导电元件，例如半球状金元素的形式。

    Multilevel frequency addressable field driven MRAM
    8.
    发明授权
    Multilevel frequency addressable field driven MRAM 有权
    多电平频率可寻址磁场驱动MRAM

    公开(公告)号：US08199553B2

    公开(公告)日：2012-06-12

    申请号：US12640081

    申请日：2009-12-17

    申请人： Wenyu Chen ,  Sylvia H. Florez Marino ,  Liesl Folks ,  Bruce D. Terris

    发明人： Wenyu Chen ,  Sylvia H. Florez Marino ,  Liesl Folks ,  Bruce D. Terris

    IPC分类号： G11C11/00

    CPC分类号： G11C11/1675 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1673

    摘要： A three-dimensional nonvolatile memory array device includes a plurality of memory elements and a memory controller. The plurality of memory elements each have a stack of a plurality of bits, which in turn each include a magnetic free layer, a magnetic pinned layer, and a non-magnetic layer. The magnetic free layer is configured to alternate its magnetization orientation based on a radio frequency current being at a resonant frequency of the magnetic free layer and on a magnetic field being applied to the magnetic free layer. The magnetic pinned layer has a specific magnetization orientation. The non-magnetic layer is located in between the magnetic free layer and the magnetic pinned layer. The memory controller is in communication with each of the plurality of memory elements, and configured to write data to and read data from the plurality of bits in the memory elements.

    摘要翻译： 三维非易失性存储器阵列器件包括多个存储器元件和存储器控制器。 多个存储元件各自具有多个位的堆叠，其又分别包括无磁性层，磁性被钉扎层和非磁性层。 无磁性层被配置为基于在无磁性层的谐振频率和施加到无磁层的磁场上的射频电流来交替其磁化取向。 磁性固定层具有特定的磁化取向。 非磁性层位于磁性自由层和磁性固定层之间。 存储器控制器与多个存储器元件中的每一个通信，并被配置为向存储器元件中的多个位写入数据并从其读取数据。

    High density spin torque three dimensional (3D) memory arrays addressed with microwave current
    10.
    发明申请
    High density spin torque three dimensional (3D) memory arrays addressed with microwave current 有权
    用微波电流寻址的高密度自旋扭矩三维（3D）存储器阵列

    公开(公告)号：US20080145951A1

    公开(公告)日：2008-06-19

    申请号：US11642277

    申请日：2006-12-19

    申请人： Liesl Folks ,  Bruce David Terris

    发明人： Liesl Folks ,  Bruce David Terris

    IPC分类号： H01L21/00

    CPC分类号： G11C11/1675 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/5607

    摘要： One embodiment of the present invention includes a three dimensional memory array having a plurality of memory elements coupled to form the array through a single top lead and a single bottom lead, each memory element including a magnetic free layer in which non-volatile data can be stored, wherein each memory element possesses unique resonant frequencies associated with each digital memory state, thereby enabling frequency addressing during parallel write and read operations, each memory element further including a fixed layer and a spacer formed between the free layer and the fixed layer.

    摘要翻译： 本发明的一个实施例包括具有多个存储元件的三维存储器阵列，其通过单个顶部引线和单个底部引线耦合以形成阵列，每个存储元件包括无磁性层，其中非易失性数据可以是 存储，其中每个存储器元件具有与每个数字存储器状态相关联的独特的谐振频率，从而在并行写入和读取操作期间使得能够进行频率寻址，每个存储元件还包括固定层和形成在自由层和固定层之间的间隔物。