发明授权
US08071434B2 Method of fabricating a thin film transistor using boron-doped oxide semiconductor thin film
有权
使用硼掺杂氧化物半导体薄膜制造薄膜晶体管的方法
- 专利标题： Method of fabricating a thin film transistor using boron-doped oxide semiconductor thin film
- 专利标题（中）： 使用硼掺杂氧化物半导体薄膜制造薄膜晶体管的方法
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申请号： US12560702申请日： 2009-09-16
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公开(公告)号： US08071434B2公开(公告)日： 2011-12-06
- 发明人: Woo Seok Cheong , Sung Mook Chung , Min Ki Ryu , Chi Sun Hwang , Hye Yong Chu
- 申请人： Woo Seok Cheong , Sung Mook Chung , Min Ki Ryu , Chi Sun Hwang , Hye Yong Chu
- 申请人地址： KR Daejeon
- 专利权人： Electronics and Telecommunications Research Institute
- 当前专利权人： Electronics and Telecommunications Research Institute
- 当前专利权人地址： KR Daejeon
- 代理机构： Rabin & Berdo, P.C.
- 优先权： KR10-2008-0129691 20081218
- 主分类号： H01L21/338
- IPC分类号： H01L21/338
摘要：
Provided is a method of fabricating a thin film transistor including source and drain electrodes, a novel channel layer, a gate insulating layer, and a gate electrode, which are formed on a substrate. The method includes the steps of forming the channel layer using an oxide semiconductor doped with boron; and patterning the channel layer. The channel layer formed is an oxide semiconductor thin film doped with boron. The electrical characteristics and high temperature stability of the thin film transistor are improved remarkably.