公开(公告)号：US08071434B2

公开(公告)日：2011-12-06

申请号：US12560702

申请日：2009-09-16

申请人： Woo Seok Cheong ,  Sung Mook Chung ,  Min Ki Ryu ,  Chi Sun Hwang ,  Hye Yong Chu

发明人： Woo Seok Cheong ,  Sung Mook Chung ,  Min Ki Ryu ,  Chi Sun Hwang ,  Hye Yong Chu

IPC分类号： H01L21/338

CPC分类号： H01L21/0237 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02573 ,  H01L21/02631 ,  H01L29/78606 ,  H01L29/7869

摘要： Provided is a method of fabricating a thin film transistor including source and drain electrodes, a novel channel layer, a gate insulating layer, and a gate electrode, which are formed on a substrate. The method includes the steps of forming the channel layer using an oxide semiconductor doped with boron; and patterning the channel layer. The channel layer formed is an oxide semiconductor thin film doped with boron. The electrical characteristics and high temperature stability of the thin film transistor are improved remarkably.

摘要翻译： 提供了一种制造薄膜晶体管的方法，该薄膜晶体管包括形成在基板上的源电极和漏电极，新颖的沟道层，栅极绝缘层和栅极电极。 该方法包括使用掺杂有硼的氧化物半导体形成沟道层的步骤; 并图形化沟道层。 形成的沟道层是掺杂有硼的氧化物半导体薄膜。 薄膜晶体管的电特性和高温稳定性显着提高。

公开(公告)号：US20100006837A1

公开(公告)日：2010-01-14

申请号：US12496558

申请日：2009-07-01

申请人： Doo Hee Cho ,  Sang Hee Park ,  Chi Sun Hwang ,  Hye Yong Chu ,  Kyoung Ik Cho ,  Shin Hyuk Yang ,  Chun Won Byun ,  Eun Suk Park ,  Oh Sang Kwon ,  Min Ki Ryu ,  Jae Heon Shin ,  Woo Seok Cheong ,  Sung Mook Chung ,  Jeong Ik Lee

发明人： Doo Hee Cho ,  Sang Hee Park ,  Chi Sun Hwang ,  Hye Yong Chu ,  Kyoung Ik Cho ,  Shin Hyuk Yang ,  Chun Won Byun ,  Eun Suk Park ,  Oh Sang Kwon ,  Min Ki Ryu ,  Jae Heon Shin ,  Woo Seok Cheong ,  Sung Mook Chung ,  Jeong Ik Lee

IPC分类号： H01L29/786 ,  H01L21/336 ,  H01B1/08

CPC分类号： H01L29/7869 ,  C23C14/08 ,  H01L29/247

摘要： Provided are a composition for an oxide semiconductor thin film, a field effect transistor using the same and a method of fabricating the field effect transistor. The composition includes an aluminum oxide, a zinc oxide, an indium oxide and a tin oxide. The thin film formed of the composition is in amorphous phase. The field effect transistor having an active layer formed of the composition can have an improved electrical characteristic and be fabricated by a low temperature process.

摘要翻译： 提供了一种用于氧化物半导体薄膜的组合物，使用该组合物的场效应晶体管和制造场效应晶体管的方法。 该组合物包括氧化铝，氧化锌，氧化铟和氧化锡。 由组合物形成的薄膜是非晶相。 具有由组合物形成的有源层的场效应晶体管可以具有改进的电特性并通过低温工艺制造。

公开(公告)号：US08095343B2

公开(公告)日：2012-01-10

申请号：US12201457

申请日：2008-08-29

申请人： Jae Heon Shin ,  Chi Sun Hwang ,  Min Ki Ryu ,  Woo Seok Cheong ,  Hye Yong Chu

发明人： Jae Heon Shin ,  Chi Sun Hwang ,  Min Ki Ryu ,  Woo Seok Cheong ,  Hye Yong Chu

IPC分类号： G06F17/11

CPC分类号： G06F17/5036

摘要： Provided are a method and apparatus for modeling source-drain current of a TFT. The method includes receiving sample data, the sample data including a sample input value and a sample output value; adjusting modeling variables according to the sample data; calculating a current model value according to the adjusted modeling variables; when a difference between the calculated current model value and the sample output value is smaller than a predetermined threshold value, fitting a current model by applying the adjusted modeling variables to the current model; applying actual input data to the fitted current model; and outputting a result value corresponding to the actual input data, wherein the current model is a model for predicting the source-drain current of the TFT.

摘要翻译： 提供了一种用于建模TFT的源极 - 漏极电流的方法和装置。 该方法包括接收样本数据，样本数据包括样本输入值和样本输出值; 根据样本数据调整建模变量; 根据调整后的建模变量计算当前模型值; 当所计算的当前模型值与样本输出值之间的差小于预定阈值时，通过将调整的建模变量应用于当前模型来拟合当前模型; 将实际输入数据应用于拟合的当前模型; 并输出与实际输入数据对应的结果值，其中当前模型是用于预测TFT的源极 - 漏极电流的模型。

公开(公告)号：US20090157372A1

公开(公告)日：2009-06-18

申请号：US12201457

申请日：2008-08-29

申请人： Jae Heon SHIN ,  Chi Sun Hwang ,  Min Ki Ryu ,  Woo Seok Cheong ,  Hye Yong Chu

发明人： Jae Heon SHIN ,  Chi Sun Hwang ,  Min Ki Ryu ,  Woo Seok Cheong ,  Hye Yong Chu

IPC分类号： G06G7/62

CPC分类号： G06F17/5036

摘要： Provided are a method and apparatus for modeling source-drain current of a TFT. The method includes receiving sample data, the sample data including a sample input value and a sample output value; adjusting modeling variables according to the sample data; calculating a current model value according to the adjusted modeling variables; when a difference between the calculated current model value and the sample output value is smaller than a predetermined threshold value, fitting a current model by applying the adjusted modeling variables to the current model; applying actual input data to the fitted current model; and outputting a result value corresponding to the actual input data, wherein the current model is a model for predicting the source-drain current of the TFT.

摘要翻译： 提供了一种用于建模TFT的源极 - 漏极电流的方法和装置。 该方法包括接收样本数据，样本数据包括样本输入值和样本输出值; 根据样本数据调整建模变量; 根据调整后的建模变量计算当前模型值; 当所计算的当前模型值与样本输出值之间的差小于预定阈值时，通过将调整的建模变量应用于当前模型来拟合当前模型; 将实际输入数据应用于拟合的当前模型; 并输出与实际输入数据对应的结果值，其中当前模型是用于预测TFT的源极 - 漏极电流的模型。

公开(公告)号：US20100258437A1

公开(公告)日：2010-10-14

申请号：US12741667

申请日：2008-09-02

申请人： Woo Seok Cheong ,  Chi Sun Hwang ,  Min Ki Ryu

发明人： Woo Seok Cheong ,  Chi Sun Hwang ,  Min Ki Ryu

IPC分类号： C23C14/34

CPC分类号： C23C14/0047 ,  C23C14/3464

摘要： Provided is a reactive sputtering apparatus, and more particularly, a reactive sputtering apparatus capable of effectively ionizing a reactive gas using inductively coupled plasma (ICP). The reactive sputtering apparatus includes: a chamber having an inlet port for introducing a plasma gas thereinto and an outlet port for exhausting the gas used during reactive sputtering to the exterior; an ICP generator disposed on the chamber, ionizing a reactive gas, and injecting the ionized gas into the chamber; and at least one sputter gun located at a side surface of the chamber and supporting a target. Therefore, the reactive sputtering apparatus can improve an ionization rate of a reactive gas using inductively coupled plasma to reduce a process temperature and improve uniformity and step coverage of thin film deposition at low cost.

摘要翻译： 提供了一种反应性溅射装置，更具体地，涉及一种使用电感耦合等离子体（ICP）能够有效地电离反应性气体的反应溅射装置。 反应性溅射装置包括：具有用于将等离子体气体引入其中的入口的室和用于将反应性溅射期间使用的气体排出到外部的出口; 设置在所述室上的ICP发生器，使反应气体电离，并将所述电离气体注入所述室中; 以及位于所述室的侧表面处并支撑靶的至少一个溅射枪。 因此，反应溅射装置可以使用电感耦合等离子体来提高反应气体的离子化速度，以降低处理温度，并以低成本提高薄膜沉积的均匀性和步骤覆盖。

公开(公告)号：US08409935B2

公开(公告)日：2013-04-02

申请号：US13590768

申请日：2012-08-21

申请人： Min Ki Ryu ,  Chi Sun Hwang ,  Chun Won Byun ,  Hye Yong Chu ,  Kyoung Ik Cho

发明人： Min Ki Ryu ,  Chi Sun Hwang ,  Chun Won Byun ,  Hye Yong Chu ,  Kyoung Ik Cho

IPC分类号： H01L21/00

CPC分类号： H01L29/66742 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/786 ,  H01L29/7869

摘要： A method of manufacturing a transparent transistor including a substrate, source and drain electrodes formed on the substrate, each having a multi-layered structure of a lower transparent layer, a metal layer and an upper transparent layer, a channel formed between the source and drain electrodes, and a gate electrode aligned with the channel. The lower transparent layer or the upper transparent layer is formed of a transparent semiconductor layer, which is the same as the channel.

摘要翻译： 一种制造透明晶体管的方法，所述透明晶体管包括形成在所述基板上的基板，源极和漏极，每个具有下透明层，金属层和上透明层的多层结构，在所述源极和漏极之间形成的沟道 电极和与通道对准的栅电极。 下透明层或上透明层由与通道相同的透明半导体层形成。

公开(公告)号：US08269220B2

公开(公告)日：2012-09-18

申请号：US12554066

申请日：2009-09-04

申请人： Min Ki Ryu ,  Chi Sun Hwang ,  Chun Won Byun ,  Hye Yong Chu ,  Kyoung Ik Cho

发明人： Min Ki Ryu ,  Chi Sun Hwang ,  Chun Won Byun ,  Hye Yong Chu ,  Kyoung Ik Cho

IPC分类号： H01L29/04

CPC分类号： H01L29/66742 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/786 ,  H01L29/7869

摘要： Provided is a transparent transistor including a substrate, source and drain electrodes formed on the substrate, each having a multi-layered structure of a lower transparent layer, a metal layer and an upper transparent layer, a channel formed between the source and drain electrodes, and a gate electrode aligned with the channel. Here, the lower transparent layer or the upper transparent layer is formed of a transparent semiconductor layer, which is the same as the channel. Thus, the use of the multi-layered transparent conductive layer can ensure transparency and conductivity, overcome a problem of contact resistance between the source and drain electrodes and a semiconductor, and improve processibility by patterning the multi-layered transparent conductive layer all at once, while deposition is performed layer by layer.

摘要翻译： 提供了一种透明晶体管，其包括形成在基板上的基板，源电极和漏电极，每个具有下透明层，金属层和上透明层的多层结构，在源极和漏极之间形成的沟道， 以及与沟道对准的栅电极。 这里，下透明层或上透明层由与通道相同的透明半导体层形成。 因此，使用多层透明导电层可以确保透明性和导电性，克服了源极和漏极之间的接触电阻和半导体的问题，并且通过一次构图多层透明导电层来提高加工性， 同时逐层进行沉积。

公开(公告)号：US20100155792A1

公开(公告)日：2010-06-24

申请号：US12554066

申请日：2009-09-04

申请人： Min Ki Ryu ,  Chi Sun Hwang ,  Chun Won Byun ,  Hye Yong Chu ,  Kyong Ik Cho

发明人： Min Ki Ryu ,  Chi Sun Hwang ,  Chun Won Byun ,  Hye Yong Chu ,  Kyong Ik Cho

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/66742 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/786 ,  H01L29/7869

摘要： Provided is a transparent transistor including a substrate, source and drain electrodes formed on the substrate, each having a multi-layered structure of a lower transparent layer, a metal layer and an upper transparent layer, a channel formed between the source and drain electrodes, and a gate electrode aligned with the channel. Here, the lower transparent layer or the upper transparent layer is formed of a transparent semiconductor layer, which is the same as the channel. Thus, the use of the multi-layered transparent conductive layer can ensure transparency and conductivity, overcome a problem of contact resistance between the source and drain electrodes and a semiconductor, and improve processibility by patterning the multi-layered transparent conductive layer all at once, while deposition is performed layer by layer.

摘要翻译： 提供了一种透明晶体管，其包括形成在基板上的基板，源电极和漏电极，每个具有下透明层，金属层和上透明层的多层结构，在源极和漏极之间形成的沟道， 以及与沟道对准的栅电极。 这里，下透明层或上透明层由与通道相同的透明半导体层形成。 因此，使用多层透明导电层可以确保透明性和导电性，克服了源极和漏极之间的接触电阻和半导体的问题，并且通过一次构图多层透明导电层来提高加工性， 同时逐层进行沉积。

公开(公告)号：US20120134197A1

公开(公告)日：2012-05-31

申请号：US13300688

申请日：2011-11-21

申请人： Chunwon Byun ,  ByeongHoon Kim ,  Sung Min Yoon ,  Shinhyuk Yang ,  Min Ki Ryu ,  Chi-Sun Hwang ,  Sang-Hee Park ,  Kyoung Ik Cho

发明人： Chunwon Byun ,  ByeongHoon Kim ,  Sung Min Yoon ,  Shinhyuk Yang ,  Min Ki Ryu ,  Chi-Sun Hwang ,  Sang-Hee Park ,  Kyoung Ik Cho

IPC分类号： G11C11/22

CPC分类号： G11C11/22

摘要： Provided is a memory cell including: a ferroelectric transistor; a plurality of switching elements electrically connected to the ferroelectric transistor; and a plurality of control lines for transmitting individual control signals to each of the plurality of switching element for separately controlling the plurality of switching elements. The plurality of switching elements are configured to be separately controlled on the basis of the individual control signals so as to prevent each electrode of the ferroelectric transistor from being floated.

摘要翻译： 提供一种存储单元，包括：铁电晶体管; 电连接到所述铁电晶体管的多个开关元件; 以及多个控制线，用于将各个控制信号发送到多个开关元件中的每一个，用于分别控制多个开关元件。 多个开关元件被配置为基于各个控制信号单独控制，以防止铁电晶体管的每个电极浮动。

公开(公告)号：US20110249202A1

公开(公告)日：2011-10-13

申请号：US13080831

申请日：2011-04-06

申请人： Sang Hee PARK ,  Chi Sun Hwang ,  Min Ki Ryu

发明人： Sang Hee PARK ,  Chi Sun Hwang ,  Min Ki Ryu

IPC分类号： H04N5/66 ,  H04N3/14

CPC分类号： H04N5/63 ,  H04N5/64

摘要： A power reduction television with a photo frame is provided. The power reduction television includes a first display configured to display a first video image, a low power second display configured to display a second video image, and a display control unit configured to control the second display to display the second video image, when the first video image is not displayed through the first display.

摘要翻译： 提供带有相框的减速电视机。 功率降低电视包括被配置为显示第一视频图像的第一显示器，被配置为显示第二视频图像的低功率第二显示器，以及显示控制单元，被配置为当第一视频图像被显示时控制第二显示器显示第二视频图像 视频图像不会通过第一个显示屏显示。