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US08072072B2 Integrated circuit including different types of gate stacks, corresponding intermediate integrated circuit structure and corresponding integrated circuit 有权
集成电路包括不同类型的栅极堆叠，相应的中间集成电路结构和相应的集成电路

  • 专利标题： Integrated circuit including different types of gate stacks, corresponding intermediate integrated circuit structure and corresponding integrated circuit
  • 专利标题（中）： 集成电路包括不同类型的栅极堆叠，相应的中间集成电路结构和相应的集成电路
  • 申请号： US11903017
    申请日： 2007-09-20
  • 公开(公告)号： US08072072B2
    公开(公告)日： 2011-12-06
  • 发明人: Lars Bach
  • 申请人： Lars Bach
  • 申请人地址： DE Munich
  • 专利权人： Qimonda AG
  • 当前专利权人： Qimonda AG
  • 当前专利权人地址： DE Munich
  • 代理机构： Patterson & Sheridan, LLP
  • 主分类号： H01L23/52
  • IPC分类号： H01L23/52 ;  H05K7/00
Integrated circuit including different types of gate stacks, corresponding intermediate integrated circuit structure and corresponding integrated circuit
摘要：
The present invention provides a manufacturing method for an integrated circuit and a corresponding integrated circuit. The integrated circuit comprises a plurality of first devices, each first device including a charge storage layer and a control electrode comprising a plurality of layers; and a plurality of second devices coupled to at least one of the plurality of first devices, each second device including a control electrode comprising at least one layer different from said plurality of layers.
摘要（中）：

本发明提供一种用于集成电路和相应的集成电路的制造方法。 集成电路包括多个第一装置，每个第一装置包括电荷存储层和包括多个层的控制电极; 以及耦合到所述多个第一装置中的至少一个的多个第二装置，每个第二装置包括包括与所述多个层不同的至少一个层的控制电极。

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