发明授权
- 专利标题： Amorphous Ge/Te deposition process
- 专利标题（中）： 无定形Ge / Te沉积工艺
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申请号： US12263403申请日： 2008-10-31
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公开(公告)号： US08093140B2公开(公告)日： 2012-01-10
- 发明人: Philip S. H. Chen , William Hunks , Tianniu Chen , Matthias Stender , Chongying Xu , Jeffrey F. Roeder , Weimin Li
- 申请人： Philip S. H. Chen , William Hunks , Tianniu Chen , Matthias Stender , Chongying Xu , Jeffrey F. Roeder , Weimin Li
- 申请人地址： US CT Danbury
- 专利权人： Advanced Technology Materials, Inc.
- 当前专利权人： Advanced Technology Materials, Inc.
- 当前专利权人地址： US CT Danbury
- 代理机构： Hultquist IP
- 代理商 Steven J. Hultqiuist; Maggie Chappuis
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; B32B15/04 ; C07F7/00
摘要：
Germanium, tellurium, and/or antimony precursors are usefully employed to form germanium-, tellurium- and/or antimony-containing films, such as films of GeTe, GST, and thermoelectric germanium-containing films. Processes for using these precursors to form amorphous films are also described. Further described is the use of [{nBuC(iPrN)2}2Ge] or Ge butyl amidinate to form GeTe smooth amorphous films for phase change memory applications.
公开/授权文献
- US20090112009A1 AMORPHOUS GE/TE DEPOSITION PROCESS 公开/授权日：2009-04-30