A nonvolatile memory device 1 capable of preventing interference between a read operation and a rewrite operation, and capable of preventing malfunctions that may occur in the event the read operation and the rewrite operation are performed simultaneously between memory blocks is provided. The nonvolatile memory device 1 is provided with a plurality of banks, a rewrite control unit 2 to which a first power source line VCC1 and a first ground line VSS1 are connected and which is adapted to control a rewrite operation with respect to a bank i, and a read control unit 5 to which a second power source line VCC2 and a second ground line VSS2 are connected and which is adapted to control a read operation with respect to a bank j, wherein the rewrite control unit 2 and the read control unit 5 are arranged so as to be spaced from each another.