发明授权
US08120986B2 Multi-port semiconductor memory device having variable access paths and method therefor
有权
具有可变存取路径的多端口半导体存储器件及其方法
- 专利标题: Multi-port semiconductor memory device having variable access paths and method therefor
- 专利标题(中): 具有可变存取路径的多端口半导体存储器件及其方法
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申请号: US12785832申请日: 2010-05-24
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公开(公告)号: US08120986B2公开(公告)日: 2012-02-21
- 发明人: Nam-Jong Kim , Ho-Cheol Lee , Kyoung-Hwan Kwon , Hyong-Ryol Hwang , Hyo-Joo Ahn
- 申请人: Nam-Jong Kim , Ho-Cheol Lee , Kyoung-Hwan Kwon , Hyong-Ryol Hwang , Hyo-Joo Ahn
- 申请人地址: KR Yeongtong-gu, Suwon-si, Gyeonggi-do
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Yeongtong-gu, Suwon-si, Gyeonggi-do
- 代理机构: Muir Patent Consulting, PLLC
- 优先权: KR2005-127534 20051222
- 主分类号: G11C8/00
- IPC分类号: G11C8/00
摘要:
A multi-port semiconductor memory device having variable access paths and a method therefor are provided. The semiconductor memory device includes a plurality of input/output ports; a memory array divided into a plurality of memory areas; and a select control unit to variably control access paths between the memory areas and the input/output ports so that each memory area is accessed through at least one of the input/output ports.
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