Invention Grant
US08120986B2 Multi-port semiconductor memory device having variable access paths and method therefor
有权
具有可变存取路径的多端口半导体存储器件及其方法
- Patent Title: Multi-port semiconductor memory device having variable access paths and method therefor
- Patent Title (中): 具有可变存取路径的多端口半导体存储器件及其方法
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Application No.: US12785832Application Date: 2010-05-24
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Publication No.: US08120986B2Publication Date: 2012-02-21
- Inventor: Nam-Jong Kim , Ho-Cheol Lee , Kyoung-Hwan Kwon , Hyong-Ryol Hwang , Hyo-Joo Ahn
- Applicant: Nam-Jong Kim , Ho-Cheol Lee , Kyoung-Hwan Kwon , Hyong-Ryol Hwang , Hyo-Joo Ahn
- Applicant Address: KR Yeongtong-gu, Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Yeongtong-gu, Suwon-si, Gyeonggi-do
- Agency: Muir Patent Consulting, PLLC
- Priority: KR2005-127534 20051222
- Main IPC: G11C8/00
- IPC: G11C8/00
Abstract:
A multi-port semiconductor memory device having variable access paths and a method therefor are provided. The semiconductor memory device includes a plurality of input/output ports; a memory array divided into a plurality of memory areas; and a select control unit to variably control access paths between the memory areas and the input/output ports so that each memory area is accessed through at least one of the input/output ports.
Public/Granted literature
- US20100232249A1 MULTI-PORT SEMICONDUCTOR MEMORY DEVICE HAVING VARIABLE ACCESS PATHS AND METHOD THEREFOR Public/Granted day:2010-09-16
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