发明授权
- 专利标题: Strained thin body semiconductor-on-insulator substrate and device
- 专利标题(中): 应变薄体绝缘体上半导体衬底和器件
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申请号: US12892950申请日: 2010-09-29
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公开(公告)号: US08124470B1公开(公告)日: 2012-02-28
- 发明人: Stephen W. Bedell , Kangguo Cheng , Bruce B. Doris , Ali Khakifirooz , Pranita Kulkarni
- 申请人: Stephen W. Bedell , Kangguo Cheng , Bruce B. Doris , Ali Khakifirooz , Pranita Kulkarni
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理机构: Cantor Colburn LLP
- 代理商 Joseph Petrokaitis
- 主分类号: H01L21/8238
- IPC分类号: H01L21/8238
摘要:
A method of forming a strained, semiconductor-on-insulator substrate includes forming a second semiconductor layer on a first semiconductor substrate. The second semiconductor is lattice matched to the first semiconductor substrate such that the second semiconductor layer is subjected to a first directional stress. An active device semiconductor layer is formed over the second semiconductor layer such that the active device semiconductor layer is initially in a relaxed state. One or more trench isolation structures are formed through the active device layer and through the second semiconductor layer so as to relax the second semiconductor layer below the active device layer and impart a second directional stress on the active device layer opposite the first directional stress.