Invention Grant
- Patent Title: Method of fabricating solar cell
- Patent Title (中): 制造太阳能电池的方法
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Application No.: US12658663Application Date: 2010-02-11
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Publication No.: US08124535B2Publication Date: 2012-02-28
- Inventor: Ching-Hsi Lin , Chien-Rong Huang , Dimitre Zahariev Dimitrov
- Applicant: Ching-Hsi Lin , Chien-Rong Huang , Dimitre Zahariev Dimitrov
- Applicant Address: TW Hsinchu
- Assignee: Industrial Technology Research Institute
- Current Assignee: Industrial Technology Research Institute
- Current Assignee Address: TW Hsinchu
- Agency: J.C. Patents
- Priority: TW98142746A 20091214
- Main IPC: H01L21/302
- IPC: H01L21/302 ; H01L21/461 ; H01L21/3105 ; H01L21/00 ; H01L31/0216 ; H01L31/0236

Abstract:
A method of fabricating a solar cell is provided. A saw damage removal process is performed on a silicon substrate. A dry surface treatment is performed to a surface of the silicon substrate on form an irregular surface. A metal-activated selective oxidation is performed to the irregular surface. By using an aqueous solution, the irregular surface is etched to form a nanotexturized surface of the silicon substrate. A dopant diffusion process is performed on the silicon substrate to form a P-N junction. An anti-reflection layer is formed on the silicon substrate. An electrode is formed on the silicon substrate.
Public/Granted literature
- US20110143484A1 Method of fabricating solar cell Public/Granted day:2011-06-16
Information query
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