公开(公告)号：US20110120548A1

公开(公告)日：2011-05-26

申请号：US12950515

申请日：2010-11-19

Applicant: Bing-Cyun CHEN ,  Ching-Hsi LIN ,  Chen-Hsun DU ,  Chung-Wen LAN

Inventor： Bing-Cyun CHEN ,  Ching-Hsi LIN ,  Chen-Hsun DU ,  Chung-Wen LAN

IPC: H01L31/0224 ,  H01L31/18

CPC classification number: H01L31/02245 ,  Y02E10/50

Abstract: A solar cell structure includes a semiconductor substrate, a first electrode, a second electrode and at least one via extending through the semiconductor substrate. The first electrode is located in the at least one via, and includes a glass phase and lead oxide, wherein the lead oxide is present in a first weight percentage amount relative to the weight of the glass phase of the first electrode. The second electrode includes a glass phase and lead oxide, and covers the first electrode, wherein the lead oxide of the second electrode is present in a second weight percentage amount relative to the weight of the glass phase of the second electrode. The first weight percentage amount is less than the second weight percentage.

Abstract translation: 太阳能电池结构包括半导体衬底，第一电极，第二电极和延伸穿过半导体衬底的至少一个通孔。 第一电极位于至少一个通孔中，并且包括玻璃相和氧化铅，其中氧化铅相对于第一电极的玻璃相的重量以第一重量百分比的量存在。 第二电极包括玻璃相和氧化铅，并且覆盖第一电极，其中第二电极的氧化铅相对于第二电极的玻璃相的重量以第二重量百分比的量存在。 第一重量百分数小于第二重量百分数。

公开(公告)号：US20090311821A1

公开(公告)日：2009-12-17

申请号：US12214183

申请日：2008-06-16

Applicant: Zahariev Dimitrov ,  Chien-Rong Huang ,  Ching-Hsi Lin

Inventor： Zahariev Dimitrov ,  Chien-Rong Huang ,  Ching-Hsi Lin

IPC: H01L31/0236

CPC classification number: H01L31/02168 ,  H01L31/02363 ,  Y02E10/50

Abstract: A method for producing a silicon substrate for solar cells is provided. The method includes performing a saw damage removal (SDR) and surface macro-texturing on a silicon substrate with acids solution, so that a surface of the silicon substrate becomes an irregular surface. Thereafter, a metal-activated selective oxidation is performed on the irregular surface with an aqueous solution containing an oxidant and a metal salt, in which the oxidant is one selected from persulfate ion, permanganate ion, bichromate ion, and a mixture thereof. Afterwards, the irregular surface is etched with an aqueous solution containing HF and H2O2 so as to form a nano-texturized silicon substrate.

Abstract translation: 提供一种太阳能电池用硅基板的制造方法。 该方法包括用酸溶液在硅衬底上进行锯损坏去除（SDR）和表面宏纹理，使得硅衬底的表面变成不规则表面。 此后，用含有氧化剂和金属盐的水溶液对不规则表面进行金属活化选择性氧化，其中氧化剂选自过硫酸根离子，高锰酸根离子，重铬酸根离子及其混合物。 然后，用含有HF和H 2 O 2的水溶液蚀刻不规则表面，以形成纳米组织化的硅衬底。

公开(公告)号：US20120090673A1

公开(公告)日：2012-04-19

申请号：US13165670

申请日：2011-06-21

Applicant: Dimitre Zahariev Dimitrov ,  Ching-Hsi Lin ,  Chung-Wen Lan ,  Der-Chin Wu

Inventor： Dimitre Zahariev Dimitrov ,  Ching-Hsi Lin ,  Chung-Wen Lan ,  Der-Chin Wu

IPC: H01L31/06 ,  H01L31/18

CPC classification number: H01L31/18 ,  H01L31/02168 ,  H01L31/02363 ,  H01L31/035281 ,  H01L31/068 ,  H01L31/1804 ,  Y02E10/52 ,  Y02E10/547 ,  Y02P70/521

Abstract: A method for forming a solar cell with selective emitters is disclosed, including selectively removing a portion of a barrier layer on a substrate to form an opening, performing a texture etching process to the substrate to form a second texture structure in a second region under the opening of the barrier layer, wherein the substrate surface in the first region does not change from the first texture structure. The first texture structure and the second texture structure include a plurality of protruding portions and recessing portions. The distance between neighboring protruding portions of the first texture structure is L1, the distance between neighboring protruding portions of the second texture structure is L2, and L1 is 2-20 times that of L2. The method for forming a solar cell with selective emitters further comprises removing the barrier layer and performing a doping process.

Abstract translation: 公开了一种用于形成具有选择性发射体的太阳能电池的方法，包括选择性地去除衬底上的阻挡层的一部分以形成开口，对衬底进行纹理蚀刻工艺以在第二区域内形成第二纹理结构 所述阻挡层的开口，其中所述第一区域中的所述基板表面不从所述第一纹理结构变化。 第一纹理结构和第二纹理结构包括多个突出部分和凹陷部分。 第一纹理结构的相邻突出部之间的距离为L1，第二纹理结构的相邻突出部之间的距离为L2，L1为L2的2​​-20倍。 用于形成具有选择性发射极的太阳能电池的方法还包括去除阻挡层并进行掺杂工艺。

公开(公告)号：US08124535B2

公开(公告)日：2012-02-28

申请号：US12658663

申请日：2010-02-11

Applicant: Ching-Hsi Lin ,  Chien-Rong Huang ,  Dimitre Zahariev Dimitrov

Inventor： Ching-Hsi Lin ,  Chien-Rong Huang ,  Dimitre Zahariev Dimitrov

IPC: H01L21/302 ,  H01L21/461 ,  H01L21/3105 ,  H01L21/00 ,  H01L31/0216 ,  H01L31/0236

CPC classification number: H01L31/02168 ,  H01L31/02363 ,  H01L31/028 ,  H01L31/068 ,  Y02E10/547

Abstract: A method of fabricating a solar cell is provided. A saw damage removal process is performed on a silicon substrate. A dry surface treatment is performed to a surface of the silicon substrate on form an irregular surface. A metal-activated selective oxidation is performed to the irregular surface. By using an aqueous solution, the irregular surface is etched to form a nanotexturized surface of the silicon substrate. A dopant diffusion process is performed on the silicon substrate to form a P-N junction. An anti-reflection layer is formed on the silicon substrate. An electrode is formed on the silicon substrate.

Abstract translation: 提供一种制造太阳能电池的方法。 在硅衬底上进行锯损坏去除工艺。 对硅衬底的表面进行干表面处理，形成不规则表面。 对不规则表面进行金属活化的选择性氧化。 通过使用水溶液，蚀刻不规则表面以形成硅衬底的纳米增塑表面。 在硅衬底上进行掺杂剂扩散处理以形成P-N结。 在硅衬底上形成防反射层。 在硅衬底上形成电极。

公开(公告)号：US5820647A

公开(公告)日：1998-10-13

申请号：US735586

申请日：1996-10-23

Applicant: Kuo-chuan Hsu ,  Ching-hsi Lin ,  Hsien-Chung Tsai

Inventor： Kuo-chuan Hsu ,  Ching-hsi Lin ,  Hsien-Chung Tsai

IPC: C03B19/06 ,  C03B32/02 ,  C03C14/00 ,  C03B19/01 ,  C03B5/16 ,  C03B19/00 ,  C03B19/09

CPC classification number: C03C14/004 ,  C03B19/06 ,  C03B32/02 ,  C03C2214/08 ,  C03C2214/20

Abstract: A process for producing stained crystallized glass and its articles which is characterized in meeting production of various crystallized glass articles in small quantity. By this process, crystallized glass is obtained with patterns and colors alike to that of granites, marble, and other natural stones. The process of heat-treatment to a prepared batch compounded of crystallizable glass granules, color powder and water at a temperature higher than the softening point thereof results in fusion bonding of the glass granules. The color powder is compounded by inorganic pigment, suspension stabilizing agent, agglomerant, deflocculant agent, and crystallizable glass powder. The surface pattern is formed by grain boundary part of crystallizable glass granules, and part of the inorganic pigment in the color powder moving with the crystallizable glass powder.

Abstract translation: 一种生产染色结晶玻璃及其制品的方法，其特征在于少量生产各种结晶玻璃制品。 通过这个过程，得到的结晶玻璃具有与花岗岩，大理石和其他天然石材相似的图案和颜色。 在高于其软化点的温度下对可结晶玻璃颗粒，着色粉末和水混合的制备批料进行热处理的过程导致玻璃颗粒的熔合。 彩色粉末由无机颜料，悬浮稳定剂，凝结剂，絮凝剂和可结晶玻璃粉末组成。 表面图案由可结晶玻璃颗粒的晶界部分形成，彩色粉末中的一部分无机颜料与可结晶玻璃粉末一起移动。

公开(公告)号：US08987038B2

公开(公告)日：2015-03-24

申请号：US13165670

申请日：2011-06-21

Applicant: Dimitre Zahariev Dimitrov ,  Ching-Hsi Lin ,  Chung-Wen Lan ,  Der-Chin Wu

Inventor： Dimitre Zahariev Dimitrov ,  Ching-Hsi Lin ,  Chung-Wen Lan ,  Der-Chin Wu

IPC: H01L31/0236 ,  H01L31/068 ,  H01L31/18

CPC classification number: H01L31/18 ,  H01L31/02168 ,  H01L31/02363 ,  H01L31/035281 ,  H01L31/068 ,  H01L31/1804 ,  Y02E10/52 ,  Y02E10/547 ,  Y02P70/521

Abstract: A method for forming a solar cell with selective emitters is disclosed, including selectively removing a portion of a barrier layer on a substrate to form an opening, performing a texture etching process to the substrate to form a second texture structure in a second region under the opening of the barrier layer, wherein the substrate surface in the first region does not change from the first texture structure. The first texture structure and the second texture structure include a plurality of protruding portions and recessing portions. The distance between neighboring protruding portions of the first texture structure is L1, the distance between neighboring protruding portions of the second texture structure is L2, and L1 is 2˜20 times that of L2. The method for forming a solar cell with selective emitters further comprises removing the barrier layer and performing a doping process.

Abstract translation: 公开了一种用于形成具有选择性发射体的太阳能电池的方法，包括选择性地去除衬底上的阻挡层的一部分以形成开口，对衬底进行纹理蚀刻工艺以在第二区域内形成第二纹理结构 所述阻挡层的开口，其中所述第一区域中的所述基板表面不从所述第一纹理结构变化。 第一纹理结构和第二纹理结构包括多个突出部分和凹陷部分。 第一纹理结构的相邻突出部之间的距离为L1，第二纹理结构的相邻突出部之间的距离为L2，L1为L2的2​​〜20倍。 用于形成具有选择性发射极的太阳能电池的方法还包括去除阻挡层并进行掺杂工艺。

公开(公告)号：US20130133728A1

公开(公告)日：2013-05-30

申请号：US13489443

申请日：2012-06-05

Applicant: Der-Chin Wu ,  Jui-Chung Shiao ,  Chien-Hsun Chen ,  Ching-Hsi Lin ,  Dimitre Zahariev Dimitrov

Inventor： Der-Chin Wu ,  Jui-Chung Shiao ,  Chien-Hsun Chen ,  Ching-Hsi Lin ,  Dimitre Zahariev Dimitrov

IPC: H01L31/075

CPC classification number: H01L31/0682 ,  H01L31/0747 ,  Y02E10/547

Abstract: A back-contact heterojunction solar cell, having a first conductive type silicon substrate, a first amorphous semiconductor layer, a second amorphous semiconductor layer, a first conductive type semiconductor layer, a second conductive type semiconductor layer and a second conductive type doped region is introduced. The first amorphous semiconductor layer disposed on the illuminated surface of the silicon substrate is an intrinsic semiconductor layer or is of the first conductive type. The second amorphous semiconductor layer disposed on the non-illuminated surface of the silicon substrate is an intrinsic semiconductor layer. The first and the second conductive type semiconductor layers are disposed on the second amorphous semiconductor layer. The second conductive type doped region is located in the silicon substrate under the second conductive type semiconductor layer and is in contact with the second amorphous semiconductor layer.

Abstract translation: 引入具有第一导电型硅衬底，第一非晶半导体层，第二非晶半导体层，第一导电类型半导体层，第二导电类型半导体层和第二导电型掺杂区域的背接触异质结太阳能电池 。 设置在硅衬底的被照射表面上的第一非晶半导体层是本征半导体层，或者是第一导电类型。 设置在硅衬底的非照射表面上的第二非晶半导体层是本征半导体层。 第一和第二导电型半导体层设置在第二非晶半导体层上。 第二导电型掺杂区域位于第二导电类型半导体层下面的硅衬底中，并与第二非晶半导体层接触。

公开(公告)号：US20110143484A1

公开(公告)日：2011-06-16

申请号：US12658663

申请日：2010-02-11

Applicant: Ching-Hsi Lin ,  Chien-Rong Huang ,  Dimitre Zahariev Dimitrov

Inventor： Ching-Hsi Lin ,  Chien-Rong Huang ,  Dimitre Zahariev Dimitrov

IPC: H01L31/18

CPC classification number: H01L31/02168 ,  H01L31/02363 ,  H01L31/028 ,  H01L31/068 ,  Y02E10/547

Abstract: A method of fabricating a solar cell is provided. A saw damage removal process is performed on a silicon substrate. A dry surface treatment is performed to a surface of the silicon substrate on form an irregular surface. A metal-activated selective oxidation is performed to the irregular surface. By using an aqueous solution, the irregular surface is etched to form a nanotexturized surface of the silicon substrate. A dopant diffusion process is performed on the silicon substrate to form a P-N junction. An anti-reflection layer is formed on the silicon substrate. An electrode is formed on the silicon substrate.

Abstract translation: 提供一种制造太阳能电池的方法。 在硅衬底上进行锯损坏去除工艺。 对硅衬底的表面进行干表面处理，形成不规则表面。 对不规则表面进行金属活化的选择性氧化。 通过使用水溶液，蚀刻不规则表面以形成硅衬底的纳米增塑表面。 在硅衬底上进行掺杂剂扩散处理以形成P-N结。 在硅衬底上形成防反射层。 在硅衬底上形成电极。

公开(公告)号：US07504039B2

公开(公告)日：2009-03-17

申请号：US10941237

申请日：2004-09-15

Applicant: Laurence P. Sadwick ,  Jehn-Huar Chern ,  Ruey-Jen Hwu ,  Jishi Ren ,  Ding Wu ,  Ching-Hsi Lin

Inventor： Laurence P. Sadwick ,  Jehn-Huar Chern ,  Ruey-Jen Hwu ,  Jishi Ren ,  Ding Wu ,  Ching-Hsi Lin

IPC: B44C1/22

CPC classification number: H01J25/42 ,  G03F7/2022 ,  G03F7/24 ,  H01J23/165 ,  Y10T29/53439

Abstract: Embodiments of the present invention include helical, ring bar and tunnel ladder slow wave structures (SWSs). Embodiments of methods of micro-fabricating such SWSs are also disclosed. Embodiments of high frequency electromagnetic devices including such SWSs are also disclosed. Exemplary high frequency electromagnetic devices may include a traveling wave tube, a traveling wave tube amplifier, a back wave oscillator, as part of a linear accelerator, a microwave power module, a klystron or a millimeter-wave power module.

Abstract translation: 本发明的实施例包括螺旋形，环形条和隧道梯形慢波结构（SWS）。 还公开了微型制造这种SWS的方法的实施例。 还公开了包括这种SWS的高频电磁装置的实施例。 示例性的高频电磁装置可以包括行波管，行波管放大器，背波振荡器，作为线性加速器的一部分，微波功率模块，速调管或毫米波功率模块。

公开(公告)号：US5823208A

公开(公告)日：1998-10-20

申请号：US865877

申请日：1997-05-30

Applicant: Ching Hsi Lin

Inventor： Ching Hsi Lin

IPC: A61C15/02

CPC classification number: A61C15/02

Abstract: A flexible integrally produced toothpick structure for gum massaging and teeth cleaning purpose has one end provided with a fixed reverse U-shaped end having, parallel rung elements or cross elements disposed thereon or arc-shaped outward projections defined consecutively or alternatively on either side thereof. The reverse U-shaped end can be twisted in use so as to effectively bring out food residues stuck in between teeth. The opposite end of the toothpick is provided with a flat extension on which are disposed a number of V-shaped marks for massaging the gum; and a slant pointed projection in connection to the flat extension is used to pick out food residues left between molar teeth.

Abstract translation: 用于牙齿按摩和牙齿清洁目的的柔性整体制造的牙签结构具有一个固定的反向U形端，其具有平行的梯形元件或设置在其上的横向元件或者在其任一侧上连续或可选地定义的弧形向外的突出部。 使用相反的U形端可以扭曲，以有效地带出粘在牙齿之间的食物残渣。 牙签的相对端设置有平坦的延伸部，其上设置有用于按摩牙龈的多个V形标记; 并且与扁平延伸部连接的倾斜的尖突起被用来挑选在牙齿之间留下的食物残余物。