Invention Grant
- Patent Title: Apparatus and method for immersion lithography
- Patent Title (中): 浸没式光刻装置及方法
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Application No.: US11762651Application Date: 2007-06-13
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Publication No.: US08125611B2Publication Date: 2012-02-28
- Inventor: Ching-Yu Chang , Tsai-Sheng Gau , Burn Jeng Lin
- Applicant: Ching-Yu Chang , Tsai-Sheng Gau , Burn Jeng Lin
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: G03B27/42
- IPC: G03B27/42 ; G03B27/52 ; G03B27/58

Abstract:
Immersion lithography apparatus and method using a shield module are provided. An immersion lithography apparatus including a lens module having an imaging lens, a substrate table positioned beneath the lens module and configured for holding a substrate for processing, a fluid module for providing an immersion fluid to a space between the lens module and the substrate on the substrate table, and a shield module for covering an edge of the substrate during processing.
Public/Granted literature
- US20080309891A1 APPARATUS AND METHOD FOR IMMERSION LITHOGRAPHY Public/Granted day:2008-12-18
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