发明授权
- 专利标题： Memory cell system with charge trap
- 专利标题（中）： 带电荷陷阱的记忆体系统
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申请号： US11539984申请日： 2006-10-10
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公开(公告)号： US08143661B2公开(公告)日： 2012-03-27
- 发明人: Shenqing Fang , Rinji Sugino , Jayendra Bhakta , Takashi Orimoto , Hiroyuki Nansei , Yukio Hayakawa , Takayuki Maruyama , Hidehiko Shiraiwa , Kuo-Tung Chang , Lei Xue , Meng Ding , Amol Ramesh Joshi , YouSeok Suh , Harpreet Sachar
- 申请人： Shenqing Fang , Rinji Sugino , Jayendra Bhakta , Takashi Orimoto , Hiroyuki Nansei , Yukio Hayakawa , Takayuki Maruyama , Hidehiko Shiraiwa , Kuo-Tung Chang , Lei Xue , Meng Ding , Amol Ramesh Joshi , YouSeok Suh , Harpreet Sachar
- 申请人地址： US CA Sunnyvale US CA Sunnyvale
- 专利权人： Spansion LLC,Advanced Micro Devices, Inc.
- 当前专利权人： Spansion LLC,Advanced Micro Devices, Inc.
- 当前专利权人地址： US CA Sunnyvale US CA Sunnyvale
- 代理机构： Farjami & Farjami LLP
- 主分类号： H01L29/792
- IPC分类号： H01L29/792
摘要：
A memory cell system is provided including a first insulator layer over a semiconductor substrate, a charge trap layer over the first insulator layer, and slot where the charge trap layer includes a second insulator layer having the characteristic of being grown.
公开/授权文献
- US20080083946A1 MEMORY CELL SYSTEM WITH CHARGE TRAP 公开/授权日：2008-04-10
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