Invention Grant
- Patent Title: Magnetic tunnel junction (MTJ) formation with two-step process
- Patent Title (中): 磁隧道结（MTJ）形成两步法
-
Application No.: US13100048Application Date: 2011-05-03
-
Publication No.: US08148174B1Publication Date: 2012-04-03
- Inventor: Ebrahim Abedifard , Parviz Keshtbod
- Applicant: Ebrahim Abedifard , Parviz Keshtbod
- Applicant Address: US CA Fremont
- Assignee: Avalanche Technology, Inc.
- Current Assignee: Avalanche Technology, Inc.
- Current Assignee Address: US CA Fremont
- Agency: IPxLaw Group LLP
- Agent Maryam Imam
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
A method of manufacturing a magnetic memory element includes the steps of performing a first etching an oxide layer is etched, using a first photo-resist, the oxide layer formed on top of a contact layer that is formed on top of a magneto tunnel junction (MTJ), depositing a second photo-resist and second etching to leave a portion of the contact layer used to suitably connect the MTJ to circuits outside of the magnetic memory element.
Information query
IPC分类:
