发明授权
- 专利标题： Compound semiconductor substrate having multiple buffer layers
- 专利标题（中）： 具有多个缓冲层的复合半导体衬底
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申请号： US12659927申请日： 2010-03-25
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公开(公告)号： US08148753B2公开(公告)日： 2012-04-03
- 发明人: Hiroshi Oishi , Jun Komiyama , Kenichi Eriguchi , Yoshihisa Abe , Akira Yoshida , Shunichi Suzuki
- 申请人： Hiroshi Oishi , Jun Komiyama , Kenichi Eriguchi , Yoshihisa Abe , Akira Yoshida , Shunichi Suzuki
- 申请人地址： JP Tokyo
- 专利权人： Covalent Materials Corporation
- 当前专利权人： Covalent Materials Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： McGinn IP Law Group, PLLC
- 优先权： JPP.2009-076840 20090326
- 主分类号： H01L29/739
- IPC分类号： H01L29/739 ; H01L31/0328 ; H01L31/0336 ; H01L31/072 ; H01L31/109 ; H01L29/06 ; H01L29/22 ; H01L33/00 ; H01L29/24 ; H01L29/732
摘要：
The present invention provides a compound semiconductor substrate, including: a single-crystal silicon substrate having a crystal face with (111) orientation; a first buffer layer which is formed on the single-crystal silicon substrate and is constituted of an AlxGa1-xN single crystal (0
公开/授权文献
- US20100244100A1 Compound semiconductor substrate 公开/授权日：2010-09-30
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