发明授权
US08148826B2 Three-dimensional integrated circuits with protection layers 有权
具有保护层的三维集成电路

Three-dimensional integrated circuits with protection layers
摘要:
A semiconductor structure includes a first die comprising a first substrate and a first bonding pad over the first substrate, a second die having a first surface and a second surface opposite the first surface, wherein the second die is stacked on the first die and a protection layer having a vertical portion on a sidewall of the second die, and a horizontal portion extending over the first die.
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