Invention Grant
- Patent Title: Single longitudinal mode laser diode
- Patent Title (中): 单纵模激光二极管
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Application No.: US12908592Application Date: 2010-10-20
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Publication No.: US08160114B2Publication Date: 2012-04-17
- Inventor: Alex A. Behfar , Kiyofumi Muro , Cristian B. Stagarescu , Alfred T. Schremer
- Applicant: Alex A. Behfar , Kiyofumi Muro , Cristian B. Stagarescu , Alfred T. Schremer
- Applicant Address: US NY Ithaca
- Assignee: BinOptics Corporation
- Current Assignee: BinOptics Corporation
- Current Assignee Address: US NY Ithaca
- Agent William A. Blake
- Main IPC: H01S3/03
- IPC: H01S3/03
Abstract:
A single-mode, etched facet distributed Bragg reflector laser includes an AlGaInAs/InP laser cavity, a front mirror stack with multiple Fabry-Perot elements, a rear DBR reflector, and a rear detector. The front mirror stack elements and the rear reflector elements include input and output etched facets, and the laser cavity is an etched ridge cavity, all formed from an epitaxial wafer by a two-step lithography and CAIBE process.
Public/Granted literature
- US20110032967A1 SINGLE LONGITUDINAL MODE LASER DIODE Public/Granted day:2011-02-10
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