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公开(公告)号：US08160114B2
公开(公告)日：2012-04-17
申请号：US12908592
申请日：2010-10-20
IPC分类号： H01S3/03
CPC分类号： H01S5/0625 , B82Y20/00 , H01S5/0264 , H01S5/06256 , H01S5/0655 , H01S5/1017 , H01S5/1021 , H01S5/1039 , H01S5/125 , H01S5/141 , H01S5/22 , H01S5/343 , H01S5/34313
摘要： A single-mode, etched facet distributed Bragg reflector laser includes an AlGaInAs/InP laser cavity, a front mirror stack with multiple Fabry-Perot elements, a rear DBR reflector, and a rear detector. The front mirror stack elements and the rear reflector elements include input and output etched facets, and the laser cavity is an etched ridge cavity, all formed from an epitaxial wafer by a two-step lithography and CAIBE process.
摘要翻译： 单模蚀刻刻面分布布拉格反射激光器包括AlGaInAs / InP激光腔，具有多个法布里 - 珀罗元件的前镜叠层，后DBR反射器和后检测器。 前反射镜堆叠元件和后反射器元件包括输入和输出蚀刻刻面，并且激光腔是蚀刻的脊腔，全部由外延晶片通过两步光刻和CAIBE工艺形成。
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公开(公告)号：US07835415B2
公开(公告)日：2010-11-16
申请号：US10929718
申请日：2004-08-31
IPC分类号： H01S3/03
CPC分类号： H01S5/0625 , B82Y20/00 , H01S5/0264 , H01S5/06256 , H01S5/0655 , H01S5/1017 , H01S5/1021 , H01S5/1039 , H01S5/125 , H01S5/141 , H01S5/22 , H01S5/343 , H01S5/34313
摘要： A single-mode, etched facet distributed Bragg reflector laser includes an AlGaInAs/InP laser cavity, a front mirror stack with multiple Fabry-Perot elements, a rear DBR reflector, and a rear detector. The front mirror stack elements and the rear reflector elements include input and output etched facets, and the laser cavity is an etched ridge cavity, all formed from an epitaxial wafer by a two-step lithography and CAIBE process.
摘要翻译： 单模蚀刻刻面分布布拉格反射激光器包括AlGaInAs / InP激光腔，具有多个法布里 - 珀罗元件的前镜叠层，后DBR反射器和后检测器。 前反射镜堆叠元件和后反射器元件包括输入和输出蚀刻刻面，并且激光腔是蚀刻的脊腔，全部由外延晶片通过两步光刻和CAIBE工艺形成。
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公开(公告)号：US20080151955A1
公开(公告)日：2008-06-26
申请号：US11644828
申请日：2006-12-26
IPC分类号： H01S5/22 , H01L21/302
CPC分类号： H01S5/22 , H01S5/209 , H01S5/2214
摘要： A photonic device incorporate an epitaxial structure having an active region, and which includes a wet etch stop layer above, but close to, the active region. An etched-facet ridge laser is fabricated on the epitaxial structure by dry etching followed by wet etching. The dry etch is designed to stop before reading the depth needed to form the ridge. The wet etch completes the formation of the ridge and stops at the wet etch stop layer.
摘要翻译： 光子器件包含具有有源区的外延结构，并且其包括在有源区上方但接近于有源区的湿蚀刻停止层。 通过干法蚀刻然后进行湿蚀刻，在外延结构上制造蚀刻小面脊激光器。 干蚀刻被设计为在读取形成脊的所需深度之前停止。 湿蚀刻完成了脊的形成，并在湿蚀刻停止层处停止。
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公开(公告)号：US07245645B2
公开(公告)日：2007-07-17
申请号：US10963739
申请日：2004-10-14
IPC分类号： H01S5/00
CPC分类号： H01S5/0264 , H01S5/02284 , H01S5/026 , H01S5/0262 , H01S5/0267 , H01S5/0654 , H01S5/0683 , H01S5/1014 , H01S5/1085 , H01S5/125 , H01S5/141 , H01S5/18 , H01S5/22 , H01S5/2231 , H01S5/4012 , H01S5/42
摘要： A surface-emitting laser, in which light is emitted vertically at one end from a near 45°-angled facet, includes a second end having a perpendicular facet from which light is emitted horizontally, for monitoring. The surface-emitting laser comprises a divergence-compensating lens on the surface above the near 45°-angled facet.
摘要翻译： 一个表面发射激光器，其中一端从近45°角的小平面垂直发射光，包括具有垂直小面的第二端，光从该垂直面垂直射出，用于监视。 表面发射激光器包括位于近45°凸面的上表面上的发散补偿透镜。
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5.发明授权High SMSR unidirectional etched lasers and low back-reflection photonic device 有权高SMSR单向蚀刻激光器和低背反射光子器件公开(公告)号：US08891576B2
公开(公告)日：2014-11-18
申请号：US12895979
申请日：2010-10-01
CPC分类号： H01S5/0287 , G02B6/12004 , H01S5/005 , H01S5/0085 , H01S5/0656 , H01S5/06817 , H01S5/0687 , H01S5/1021 , H01S5/1071 , H01S5/1082 , H01S5/1085 , H01S5/125 , H01S5/14
摘要： Unidirectionality of lasers is enhanced by forming one or more etched gaps (78, 80) in the laser cavity. The gaps may be provided in any segment of a laser, such as any leg of a ring laser, or in one leg (62) of a V-shaped laser (60). A Brewster angle facet at the distal end of a photonic device coupled to the laser reduces back-reflection into the laser cavity. A distributed Bragg reflector is used at the output of a laser to enhance the side-mode suppression ratio of the laser.
摘要翻译： 通过在激光腔中形成一个或多个蚀刻间隙（78,80）来增强激光器的单向性。 可以在激光器的任何部分（例如环形激光器的任何腿部）中或在V形激光器（60）的一个腿部（62）中提供间隙。 耦合到激光器的光子器件的远端处的布鲁斯特角小面减少反射到激光腔。 在激光器的输出处使用分布式布拉格反射器来增强激光器的侧模抑制比。
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公开(公告)号：US08306086B2
公开(公告)日：2012-11-06
申请号：US13397595
申请日：2012-02-15
IPC分类号： H01S5/00
CPC分类号： H01S5/0201 , B82Y20/00 , H01S5/0042 , H01S5/0203 , H01S5/0262 , H01S5/0264 , H01S5/028 , H01S5/1039 , H01S5/18 , H01S5/22 , H01S5/32341 , H01S5/34333
摘要： A process for fabricating AlGaInN-based photonic devices, such as lasers, capable of emitting blue light employs etching to form device waveguides and mirrors, preferably using a temperature of over 500° C. and an ion beam in excess of 500 V in CAIBE.
摘要翻译： 用于制造能够发射蓝光的基于AlGaInN的光子器件（例如激光器）的工艺采用蚀刻法，在CAIBE中优选使用超过500℃的温度和超过500V的离子束来形成器件波导和反射镜。
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公开(公告)号：US08009711B2
公开(公告)日：2011-08-30
申请号：US12567448
申请日：2009-09-25
IPC分类号： H01S5/00
CPC分类号： H01S5/22 , H01S5/209 , H01S5/2214
摘要： A photonic device incorporates an epitaxial structure having an active region, and which includes a wet etch stop layer above, but close to, the active region. An etched-facet ridge laser is fabricated on the epitaxial structure by dry etching followed by wet etching. The dry etch is designed to stop before reading the depth needed to form the ridge. The wet etch completes the formation of the ridge and stops at the wet etch stop layer.
摘要翻译： 光子器件包含具有有源区的外延结构，并且其包括在活性区上方但接近于活性区的湿蚀刻停止层。 通过干法蚀刻然后进行湿蚀刻，在外延结构上制造蚀刻小面脊激光器。 干蚀刻被设计为在读取形成脊的所需深度之前停止。 湿蚀刻完成了脊的形成，并在湿蚀刻停止层处停止。
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公开(公告)号：US20100015743A1
公开(公告)日：2010-01-21
申请号：US12567448
申请日：2009-09-25
IPC分类号： H01L21/30
CPC分类号： H01S5/22 , H01S5/209 , H01S5/2214
摘要： A photonic device incorporates an epitaxial structure having an active region, and which includes a wet etch stop layer above, but close to, the active region. An etched-facet ridge laser is fabricated on the epitaxial structure by dry etching followed by wet etching. The dry etch is designed to stop before reading the depth needed to form the ridge. The wet etch completes the formation of the ridge and stops at the wet etch stop layer.
摘要翻译： 光子器件包含具有有源区的外延结构，并且其包括在活性区上方但接近于活性区的湿蚀刻停止层。 通过干法蚀刻然后进行湿蚀刻，在外延结构上制造蚀刻小面脊激光器。 干蚀刻被设计为在读取形成脊的所需深度之前停止。 湿蚀刻完成了脊的形成，并在湿蚀刻停止层处停止。
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公开(公告)号：US08290013B2
公开(公告)日：2012-10-16
申请号：US13397612
申请日：2012-02-15
IPC分类号： H01S5/00
CPC分类号： H01S5/0201 , B82Y20/00 , H01S5/0042 , H01S5/0203 , H01S5/0262 , H01S5/0264 , H01S5/028 , H01S5/1039 , H01S5/18 , H01S5/22 , H01S5/32341 , H01S5/34333
摘要： A process for fabricating AlGaInN-based photonic devices, such as lasers, capable of emitting blue light employs dry etching to form device waveguides and mirrors. The dry etching is preferably performed using a Chemically Assisted Ion Beam Etching (CAIBE) system.
摘要翻译： 用于制造能够发射蓝光的基于AlGaInN的光子器件（例如激光器）的工艺采用干蚀刻来形成器件波导和反射镜。 干蚀刻优选使用化学辅助离子束蚀刻（CAIBE）系统进行。
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公开(公告)号：US08130806B2
公开(公告)日：2012-03-06
申请号：US11455636
申请日：2006-06-20
IPC分类号： H01S5/00
CPC分类号： H01S5/0201 , B82Y20/00 , H01S5/0042 , H01S5/0203 , H01S5/0262 , H01S5/0264 , H01S5/028 , H01S5/1039 , H01S5/18 , H01S5/22 , H01S5/32341 , H01S5/34333
摘要： A process for fabricating lasers capable of emitting blue light wherein a GaN wafer is etched to form laser waveguides and mirrors using a temperature of over 500° C. and an ion beam in excess of 500 V in CAIBE.
摘要翻译： 一种用于制造能够发射蓝光的激光的工艺，其中在CAIBE中使用超过500℃的温度和超过500V的离子束蚀刻GaN晶片以形成激光波导和反射镜。
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