Invention Grant
- Patent Title: Manufacturing method of circuit structure
- Patent Title (中): 电路结构的制造方法
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Application No.: US12783806Application Date: 2010-05-20
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Publication No.: US08161638B2Publication Date: 2012-04-24
- Inventor: Tzyy-Jang Tseng , Chang-Ming Lee , Wen-Fang Liu , Cheng-Po Yu
- Applicant: Tzyy-Jang Tseng , Chang-Ming Lee , Wen-Fang Liu , Cheng-Po Yu
- Applicant Address: TW Taoyuan
- Assignee: Unimicron Technology Corp.
- Current Assignee: Unimicron Technology Corp.
- Current Assignee Address: TW Taoyuan
- Agency: J.C. Patents
- Priority: TW98136682A 20091029
- Main IPC: H01K3/10
- IPC: H01K3/10

Abstract:
A manufacturing method of circuit structure is described as follows. Firstly, a composite dielectric layer, a circuit board and an insulating layer disposed therebetween are provided. The composite dielectric layer includes a non-platable dielectric layer and a platable dielectric layer between the non-platable dielectric layer and the insulating layer wherein the non-platable dielectric layer includes a chemical non-platable material and the platable dielectric layer includes a chemical platable material. Then, the composite dielectric layer, the circuit board and the insulating layer are compressed. Subsequently, a through hole passing through the composite dielectric layer and the insulating layer is formed and a conductive via connecting a circuit layer of the circuit board is formed therein. Then, a trench pattern passing through the non-platable dielectric layer is formed on the composite dielectric layer. Subsequently, a chemical plating process is performed to form a conductive pattern in the trench pattern.
Public/Granted literature
- US20110100543A1 MANUFACTURING METHOD OF CIRCUIT STRUCTURE Public/Granted day:2011-05-05
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