发明授权
- 专利标题: Semiconductor device
- 专利标题(中): 半导体器件
-
申请号: US12155232申请日: 2008-05-30
-
公开(公告)号: US08164160B2公开(公告)日: 2012-04-24
- 发明人: Yuichi Nakao , Takahisa Yamaha
- 申请人: Yuichi Nakao , Takahisa Yamaha
- 申请人地址: JP Kyoto
- 专利权人: Rohm Co., Ltd.
- 当前专利权人: Rohm Co., Ltd.
- 当前专利权人地址: JP Kyoto
- 代理机构: Rabin & Berdo, P.C.
- 优先权: JP2007-145809 20070531
- 主分类号: H01L29/92
- IPC分类号: H01L29/92
摘要:
A semiconductor device according to the present invention has a multilayer wiring structure laminating and disposing a plurality of with sandwiching an insulating film and includes: a copper wire having copper as a main component; an insulating film formed on the copper wire; an aluminum wire having aluminum as a main component and formed on the insulating film to be electrically connected to the copper wire via a via hole formed to penetrate through the insulating film; and a surface protective film formed on the aluminum wire; and the surface protective film formed with a pad opening exposing a portion of the aluminum wire as an electrode pad for electrical connection with an external portion.
公开/授权文献
- US20080296730A1 Semiconductor device 公开/授权日:2008-12-04
信息查询
IPC分类: