Invention Grant
- Patent Title: Plasma processing apparatus of batch type
- Patent Title (中): 批式等离子体处理装置
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Application No.: US12219218Application Date: 2008-07-17
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Publication No.: US08166914B2Publication Date: 2012-05-01
- Inventor: Toshiki Takahashi
- Applicant: Toshiki Takahashi
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Smith, Gambrell & Russell, LLP
- Priority: JP2007-200114 20070731
- Main IPC: B05B5/025
- IPC: B05B5/025 ; B05C5/00 ; B05C9/08 ; C23C16/00 ; C23F1/00 ; H01L21/306

Abstract:
A plasma processing apparatus of the batch type includes a tubular process container having a closed end and an open end opposite to each other, and a process field for accommodating target substrates, the process container including a tubular insulating body. The apparatus further includes a holder configured to hold the target substrates at intervals, a loading mechanism configured to load and unload the holder into and from the process container, and a lid member connected to the loading mechanism and configured to airtightly close the open end. A first electrode is disposed at the closed end of the process container, and a second electrode is disposed at the lid member, to constitute a pair of parallel-plate electrodes. An RF power supply is connected to one of the first and second electrodes and configured to apply an RF power for plasma generation.
Public/Granted literature
- US20090032190A1 Plasma processing apparatus of batch type Public/Granted day:2009-02-05
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