Invention Grant
- Patent Title: Chemical mechanical polishing slurry, its preparation method, and use for the same
- Patent Title (中): 化学机械抛光浆料及其制备方法及用途相同
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Application No.: US11892720Application Date: 2007-08-27
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Publication No.: US08167684B2Publication Date: 2012-05-01
- Inventor: Hui-Fang Hou , Wen-Cheng Liu , Yen-Liang Chen , Jui-Ching Chen
- Applicant: Hui-Fang Hou , Wen-Cheng Liu , Yen-Liang Chen , Jui-Ching Chen
- Applicant Address: US IL Aurora
- Assignee: Cabot Microelectronics Corporation
- Current Assignee: Cabot Microelectronics Corporation
- Current Assignee Address: US IL Aurora
- Agent Thomas E. Omholt; Steven D. Weseman
- Priority: TW95139197A 20061024
- Main IPC: B24B1/00
- IPC: B24B1/00 ; B24C1/00 ; B24D3/02 ; C09K3/14 ; C09G1/02

Abstract:
A chemical mechanical polishing slurry for polishing a copper layer without excessively or destructively polishing a barrier layer beneath the copper layer is disclosed and includes an acid, a surfactant, and a silica sol having silica polishing particles that are surface modified with a surface charge modifier and that have potassium ions attached thereto. A method for preparing the chemical mechanical polishing slurry and a chemical mechanical polishing method using the chemical mechanical polishing slurry are also disclosed.
Public/Granted literature
- US20080096470A1 Chemical mechanical polishing slurry, its preparation method, and use for the same Public/Granted day:2008-04-24
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