发明授权
- 专利标题: Silicon etch with passivation using plasma enhanced oxidation
- 专利标题(中): 使用等离子体增强氧化的钝化硅蚀刻
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申请号: US12257210申请日: 2008-10-23
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公开(公告)号: US08173547B2公开(公告)日: 2012-05-08
- 发明人: Jaroslaw W. Winniczek , Robert P. Chebi
- 申请人: Jaroslaw W. Winniczek , Robert P. Chebi
- 申请人地址: US CA Fremont
- 专利权人: Lam Research Corporation
- 当前专利权人: Lam Research Corporation
- 当前专利权人地址: US CA Fremont
- 代理机构: Beyer Law Group LLP
- 主分类号: H01L21/311
- IPC分类号: H01L21/311
摘要:
A method and apparatus for etching a silicon layer through a patterned mask formed thereon are provided. The silicon layer is placed in an etch chamber. An etch gas comprising a fluorine containing gas and an oxygen and hydrogen containing gas is provided into the etch chamber. A plasma is generated from the etch gas and features are etched into the silicon layer using the plasma. The etch gas is then stopped. The plasma may contain OH radicals.