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1.发明授权Photoresist stripping chamber and methods of etching photoresist on substrates 有权光刻胶剥离室和在基材上蚀刻光致抗蚀剂的方法公开(公告)号：US07605063B2
公开(公告)日：2009-10-20
申请号：US11431104
申请日：2006-05-10
CPC分类号： H01L21/31138 , H01J37/321 , H01J2237/3342
摘要： Methods of processing a substrate so as to protect an active area include positioning a substrate in an inductively coupled plasma processing chamber, supplying process gas to the chamber, generating plasma from the process gas and processing the substrate so as to protect the active area by maintaining a plasma potential of about 5 to 15 volts at the substrate surface and/or passivating the active area by using a siliane-free process gas including at least one additive effective to form a protective layer on the active area of the substrate wherein the protective layer includes at least one element from the additive which is already present in the active area.
摘要翻译： 处理衬底以保护有源区域的方法包括将衬底定位在电感耦合等离子体处理室中，将工艺气体供应到腔室，从处理气体产生等离子体并处理衬底，以通过保持来保护有源区域 在衬底表面上具有约5至15伏特的等离子体电位和/或通过使用包含至少一种在衬底的有源区上形成保护层的至少一种添加剂的无硅衬底工艺气体来钝化活性区域，其中保护层 包括已经存在于活性区域中的来自添加剂的至少一种元素。
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公开(公告)号：US09018098B2
公开(公告)日：2015-04-28
申请号：US12257215
申请日：2008-10-23
IPC分类号： H01L21/302 , H01L21/461 , H01L21/3065 , H01J37/32 , H01L21/3213
CPC分类号： H01L21/3065 , H01J37/32082 , H01L21/32137
摘要： A silicon layer is etched through a patterned mask formed thereon using an etch chamber. A fluorine (F) containing etch gas and a silicon (Si) containing chemical vapor deposition gas are provided in the etch chamber. The fluorine (F) containing etch gas is used to etch features into the silicon layer, and the silicon (Si) containing chemical vapor deposition gas is used to form a silicon-containing deposition layer on sidewalls of the features. A plasma is generated from the etch gas and the chemical vapor deposition gas, and a bias voltage is provided. Features are etched into the silicon layer using the plasma, and a silicon-containing passivation layer is deposited on the sidewalls of the features which are being etched. Silicon in the passivation layer primarily comes from the chemical vapor deposition gas. The etch gas and the chemical vapor deposition gas are then stopped.
摘要翻译： 通过使用蚀刻室在其上形成的图案化掩模蚀刻硅层。 在蚀刻室中设置含有含氟（F）的蚀刻气体和含硅（Si）的化学气相沉积气体。 使用含氟（F）的蚀刻气体将特征蚀刻到硅层中，并且使用含硅（Si）的化学气相沉积气体在特征的侧壁上形成含硅沉积层。 从蚀刻气体和化学气相沉积气体产生等离子体，并提供偏置电压。 使用等离子体将特征蚀刻到硅层中，并且在被蚀刻的特征的侧壁上沉积含硅钝化层。 钝化层中的硅主要来自化学气相沉积气体。 然后停止蚀刻气体和化学气相沉积气体。
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公开(公告)号：US08298336B2
公开(公告)日：2012-10-30
申请号：US11096820
申请日：2005-04-01
申请人： Ing-Yann Wang , Jaroslaw W. Winniczek , David J. Cooperberg , Erik A. Edelberg , Robert P. Chebi
发明人： Ing-Yann Wang , Jaroslaw W. Winniczek , David J. Cooperberg , Erik A. Edelberg , Robert P. Chebi
IPC分类号： C23C16/455 , C23C16/458 , C23F1/00 , H01L21/306 , C23C16/06 , C23C16/22
CPC分类号： H01J37/32449 , H01J37/32357 , H01J37/3244 , Y10T137/0318 , Y10T137/85938
摘要： A gas chamber contains upper and lower chamber bodies forming a cavity, a heating chuck for a wafer, a remote gas source, and an exhaust unit. Gas is injected into the cavity through channels in an injector. Each channel has sections that are bent with respect to each other at a sufficient angle to substantially eliminate entering light rays entering the channel from exiting the channel without reflection. The channels have funnel-shaped nozzles at end points proximate to the chuck. The injector also has thermal expansion relief slots and small gaps between the injector and mating surfaces of the chamber and gas source. The temperature of the injector is controlled by a cooling liquid in cooling channels and electrical heaters in receptacles of the injector. The upper chamber body is funnel-shaped and curves downward at an end of the upper chamber body proximate to the chuck.
摘要翻译： 气室包含形成空腔的上下腔体，用于晶片的加热卡盘，远程气体源和排气单元。 气体通过注射器中的通道注入空腔。 每个通道具有以足够的角度相对于彼此弯曲的部分，以基本上消除进入通道的入射光线而不反射离开通道。 通道在靠近卡盘的端点处具有漏斗形喷嘴。 注射器还具有热膨胀释放槽和注射器与腔室和气体源的配合表面之间的小间隙。 喷射器的温度由冷却通道中的冷却液体和喷射器插座中的电加热器控制。 上腔体是漏斗形的，并且在上腔体的靠近卡盘的端部处向下弯曲。
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公开(公告)号：US08757178B2
公开(公告)日：2014-06-24
申请号：US13241087
申请日：2011-09-22
CPC分类号： H01L21/31138 , G03F7/427 , H01J37/321 , H01J37/32357 , H01J37/3244 , H01J37/32449
摘要： A method and apparatus remove photoresist from a wafer. A process gas containing sulfur (S), oxygen (O), and hydrogen (H) is provided, and a plasma is generated from the process gas in a first chamber. A radical-rich ion-poor reaction medium is flown from the first chamber to a second chamber where the wafer is placed. The patterned photoresist layer on the wafer is removed using the reaction medium, and then the reaction medium flowing into the second chamber is stopped. Water vapor may be introduced in a solvation zone provided in a passage of the reaction medium flowing down from the plasma such that the water vapor solvates the reaction medium to form solvated clusters of species before the reaction medium reaches the wafer. The photoresist is removed using the solvated reaction medium.
摘要翻译： 一种方法和设备从晶片上去除光致抗蚀剂。 提供含有硫（S），氧（O）和氢（H）的工艺气体，并且在第一室中从处理气体产生等离子体。 富含自由基的离子不良反应介质从第一室流到放置晶片的第二室。 使用反应介质去除晶片上的图案化光致抗蚀剂层，然后停止流入第二室的反应介质。 水蒸气可以被引入设置在从等离子体向下流动的反应介质的通道中的溶剂化区，使得水蒸气溶解反应介质以在反应介质到达晶片之前形成溶剂化的物质簇。 使用溶剂化反应介质去除光致抗蚀剂。
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公开(公告)号：US20100101603A1
公开(公告)日：2010-04-29
申请号：US12257216
申请日：2008-10-23
CPC分类号： H01L21/31138 , G03F7/427 , H01J37/321 , H01J37/32357 , H01J37/3244 , H01J37/32449
摘要： A method and apparatus remove photoresist from a wafer. A process gas containing sulfur (S), oxygen (O), and hydrogen (H) is provided, and a plasma is generated from the process gas in a first chamber. A radical-rich ion-poor reaction medium is flown from the first chamber to a second chamber where the wafer is placed. The patterned photoresist layer on the wafer is removed using the reaction medium, and then the reaction medium flowing into the second chamber is stopped. Water vapor may be introduced in a salvation zone provided in a passage of the reaction medium flowing down from the plasma such that the water vapor solvates the reaction medium to form solvated clusters of species before the reaction medium reaches the wafer. The photoresist is removed using the solvated reaction medium.
摘要翻译： 一种方法和设备从晶片上去除光致抗蚀剂。 提供含有硫（S），氧（O）和氢（H）的工艺气体，并且在第一室中从处理气体产生等离子体。 富含自由基的离子不良反应介质从第一室流到放置晶片的第二室。 使用反应介质去除晶片上的图案化光致抗蚀剂层，然后停止流入第二室的反应介质。 水蒸汽可以被引入设置在从等离子体向下流动的反应介质的通道中的救生区，使得水蒸气溶解反应介质以在反应介质到达晶片之前形成溶剂化的物质簇。 使用溶剂化反应介质去除光致抗蚀剂。
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公开(公告)号：US08173547B2
公开(公告)日：2012-05-08
申请号：US12257210
申请日：2008-10-23
IPC分类号： H01L21/311
CPC分类号： H01L21/32137 , H01J37/32082 , H01L21/3065
摘要： A method and apparatus for etching a silicon layer through a patterned mask formed thereon are provided. The silicon layer is placed in an etch chamber. An etch gas comprising a fluorine containing gas and an oxygen and hydrogen containing gas is provided into the etch chamber. A plasma is generated from the etch gas and features are etched into the silicon layer using the plasma. The etch gas is then stopped. The plasma may contain OH radicals.
摘要翻译： 提供了通过形成在其上的图案化掩模来蚀刻硅层的方法和装置。 将硅层放置在蚀刻室中。 包括含氟气体和含氧和氢气的气体的蚀刻气体被提供到蚀刻室中。 从蚀刻气体产生等离子体，并且使用等离子体将特征蚀刻到硅层中。 然后停止蚀刻气体。 等离子体可能含有OH自由基。
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公开(公告)号：US08043434B2
公开(公告)日：2011-10-25
申请号：US12257216
申请日：2008-10-23
IPC分类号： B08B7/00
CPC分类号： H01L21/31138 , G03F7/427 , H01J37/321 , H01J37/32357 , H01J37/3244 , H01J37/32449
摘要： A method and apparatus remove photoresist from a wafer. A process gas containing sulfur (S), oxygen (O), and hydrogen (H) is provided, and a plasma is generated from the process gas in a first chamber. A radical-rich ion-poor reaction medium is flown from the first chamber to a second chamber where the wafer is placed. The patterned photoresist layer on the wafer is removed using the reaction medium, and then the reaction medium flowing into the second chamber is stopped. Water vapor may be introduced in a salvation zone provided in a passage of the reaction medium flowing down from the plasma such that the water vapor solvates the reaction medium to form solvated clusters of species before the reaction medium reaches the wafer. The photoresist is removed using the solvated reaction medium.
摘要翻译： 一种方法和设备从晶片上去除光致抗蚀剂。 提供含有硫（S），氧（O）和氢（H）的工艺气体，并且在第一室中从处理气体产生等离子体。 富含自由基的离子不良反应介质从第一室流到放置晶片的第二室。 使用反应介质去除晶片上的图案化光致抗蚀剂层，然后停止流入第二室的反应介质。 水蒸汽可以被引入设置在从等离子体向下流动的反应介质的通道中的救生区，使得水蒸气溶解反应介质以在反应介质到达晶片之前形成溶剂化的物质簇。 使用溶剂化反应介质去除光致抗蚀剂。
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公开(公告)号：US20100105209A1
公开(公告)日：2010-04-29
申请号：US12257210
申请日：2008-10-23
IPC分类号： H01L21/3065
CPC分类号： H01L21/32137 , H01J37/32082 , H01L21/3065
摘要： A method and apparatus for etching a silicon layer through a patterned mask formed thereon are provided. The silicon layer is placed in an etch chamber. An etch gas comprising a fluorine containing gas and an oxygen and hydrogen containing gas is provided into the etch chamber. A plasma is generated from the etch gas and features are etched into the silicon layer using the plasma. The etch gas is then stopped. The plasma may contain OH radicals.
摘要翻译： 提供了通过形成在其上的图案化掩模来蚀刻硅层的方法和装置。 将硅层放置在蚀刻室中。 包括含氟气体和含氧和氢气的气体的蚀刻气体被提供到蚀刻室中。 从蚀刻气体产生等离子体，并且使用等离子体将特征蚀刻到硅层中。 然后停止蚀刻气体。 等离子体可能含有OH自由基。
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公开(公告)号：US08598037B2
公开(公告)日：2013-12-03
申请号：US13339301
申请日：2011-12-28
IPC分类号： H01L21/3065 , H01L21/308
CPC分类号： H01L21/32137 , H01J37/32082 , H01L21/3065
摘要： A method of etching a silicon layer through a patterned mask is provided. The method uses an etch chamber in which the silicon layer is placed. The method includes (a) providing the silicon layer having the patterned mask formed thereon, (b) providing an etch gas comprising a fluorine containing gas and an oxygen and hydrogen containing gas into the etch chamber in which the silicon layer has been placed, (c) generating a plasma from the etch gas, (d) etching features into the silicon layer through the patterned mask using the plasma, and (e) stopping the etch gas. The oxygen and hydrogen containing gas contains water vapor.
摘要翻译： 提供了通过图案化掩模蚀刻硅层的方法。 该方法使用其中放置硅层的蚀刻室。 该方法包括（a）提供其上形成有图案化掩模的硅层，（b）在其中放置硅层的蚀刻室中提供包括含氟气体和含氧和氢的气体的蚀刻气体（ c）从蚀刻气体产生等离子体，（d）通过使用等离子体的图案化掩模将特征蚀刻到硅层中，和（e）停止蚀刻气体。 含氧气体和含氢气体含有水蒸气。
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公开(公告)号：US20100105208A1
公开(公告)日：2010-04-29
申请号：US12257215
申请日：2008-10-23
IPC分类号： H01L21/311 , H01L21/306
CPC分类号： H01L21/3065 , H01J37/32082 , H01L21/32137
摘要： A silicon layer is etched through a patterned mask formed thereon using an etch chamber. A fluorine (F) containing etch gas and a silicon (Si) containing chemical vapor deposition gas are provided in the etch chamber. The fluorine (F) containing etch gas is used to etch features into the silicon layer, and the silicon (Si) containing chemical vapor deposition gas is used to form a silicon-containing deposition layer on sidewalls of the features. A plasma is generated from the etch gas and the chemical vapor deposition gas, and a bias voltage is provided. Features are etched into the silicon layer using the plasma, and a silicon-containing passivation layer is deposited on the sidewalls of the features which are being etched. Silicon in the passivation layer primarily comes from the chemical vapor deposition gas. The etch gas and the chemical vapor deposition gas are then stopped.
摘要翻译： 通过使用蚀刻室在其上形成的图案化掩模蚀刻硅层。 在蚀刻室中设置含有含氟（F）的蚀刻气体和含硅（Si）的化学气相沉积气体。 使用含氟（F）的蚀刻气体将特征蚀刻到硅层中，并且使用含硅（Si）的化学气相沉积气体在特征的侧壁上形成含硅沉积层。 从蚀刻气体和化学气相沉积气体产生等离子体，并提供偏置电压。 使用等离子体将特征蚀刻到硅层中，并且在被蚀刻的特征的侧壁上沉积含硅钝化层。 钝化层中的硅主要来自化学气相沉积气体。 然后停止蚀刻气体和化学气相沉积气体。
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