发明授权
US08174860B2 Semiconductor memory device having improved voltage transmission path and driving method thereof
有权
具有改善的电压传输路径的半导体存储器件及其驱动方法
- 专利标题: Semiconductor memory device having improved voltage transmission path and driving method thereof
- 专利标题(中): 具有改善的电压传输路径的半导体存储器件及其驱动方法
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申请号: US13042049申请日: 2011-03-07
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公开(公告)号: US08174860B2公开(公告)日: 2012-05-08
- 发明人: Sun-Won Kang , Seung-Duk Baek
- 申请人: Sun-Won Kang , Seung-Duk Baek
- 申请人地址: KR Maetan-dong, Yeongtong-gu, Suwon-si, Gyeonggi-do
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Maetan-dong, Yeongtong-gu, Suwon-si, Gyeonggi-do
- 代理机构: Muir Patent Consulting, PLLC
- 优先权: KR10-2006-0117087 20061124
- 主分类号: G11C5/06
- IPC分类号: G11C5/06 ; G11C5/00 ; H01L23/02 ; H01L23/48
摘要:
Provided are a semiconductor memory device and a method of driving the device which can improve a noise characteristic of a voltage signal supplied to a memory cell of the device. The semiconductor memory device includes a first semiconductor chip and one or more second semiconductor chips stacked on the first chip. The first chip includes an input/output circuit for sending/receiving a voltage signal, a data signal, and a control signal to/from an outside system. The one or more second semiconductor chips each include a memory cell region for storing data. The second semiconductor chips receive at least one signal through one or more signal paths that are formed outside the input/output circuit of the first chip.