摘要:
A semiconductor package includes a semiconductor chip stack disposed between first and second leads near first and second sides of the package and including a plurality of semiconductor chips, and a redistribution structure disposed on the semiconductor chip stack. At least one semiconductor chip of the semiconductor chip stack includes a plurality of first chip pads disposed near or closer to a third side of the package. The redistribution structure includes a first redistribution pad disposed near or closer to the first side and electrically connected to the first lead, a second redistribution pad disposed near or closer to the second side and electrically connected to the second lead, and a third redistribution pad disposed near or closer to the third side and electrically connected to a first one of the first chip pads and the first redistribution pad.
摘要:
The invention provides a semiconductor device. The semiconductor device includes a semiconductor chip having an active surface on which pads are disposed, a passivation layer pattern disposed to cover the active surface of the semiconductor chip and to expose the pads, a first insulation layer pattern disposed on the passivation layer pattern, a second insulation layer pattern disposed on only a portion of the first insulation layer pattern, and redistribution line patterns electrically connected to the pads and disposed so as to extend across the second insulation layer pattern and the first insulation layer pattern. A method of fabricating the same is also provided.
摘要:
A chip stack may include a first chip and a second chip stacked on the first chip. Each of the first and second chips may include a substrate having an active surface and an inactive surface opposite to the active surface; an internal circuit in the active surface; an I/O chip pad on the active surface and connected to the internal circuit through an I/O buffer; and a I/O connection pad connected to the I/O chip pad through the I/O buffer by a circuit wiring. A redistributed I/O chip pad layer may be on the active surface of the first chip, the redistributed I/O chip pad layer redistributing the I/O chip pad. The I/O connection pads of the first chip and the second chip may be electrically connected to each other by an electrical connecting part.
摘要:
Provided is a method of fabricating a chip-on-chip (COC) semiconductor device. The method of fabricating a chip-on-chip (COC) semiconductor device may include preparing a first semiconductor device with a metal wiring having at least one discontinuous spot formed therein, preparing a second semiconductor device with at least one bump formed on a surface of the second semiconductor device corresponding to the at least one discontinuous spot, aligning the first semiconductor device onto the second semiconductor device, and connecting the at least one bump of the second semiconductor device to the at least one discontinuous spot formed in the metal wiring of the first semiconductor device.
摘要:
Provided are a semiconductor memory device and a method of driving the device which can improve a noise characteristic of a voltage signal supplied to a memory cell of the device. The semiconductor memory device includes a first semiconductor chip and one or more second semiconductor chips stacked on the first chip. The first chip includes an input/output circuit for sending/receiving a voltage signal, a data signal, and a control signal to/from an outside system. The one or more second semiconductor chips each include a memory cell region for storing data. The second semiconductor chips receive at least one signal through one or more signal paths that are formed outside the input/output circuit of the first chip.
摘要:
A stack package may include a substrate having first and second faces opposite each other and an opening formed therein. The first semiconductor chip may be mounted on the first face of the substrate and include a through electrode in the middle region of the first semiconductor chip that is exposed through the opening. The second semiconductor chip may be stacked on the first semiconductor chip and electrically connected to the first semiconductor chip by the through electrode of the first semiconductor chip. The circuit pattern may be formed on the second face of the substrate and include a bonding pad arranged adjacent to the opening and electrically connected to the through electrode of the first semiconductor chip through the opening, an outer connection pad spaced apart from the bonding pad and a connection wiring extending from the opening to the outer connection pad via the bonding pad.
摘要:
Provided is a semiconductor memory module allowing a filling member formed between a module substrate and memory chips mounted on the module substrate to completely fill the space between the module substrate and the memory chips. According to embodiments of the present invention, the semiconductor memory module includes a module substrate having at least one memory chip mounted on the substrate such that its edges are oblique to major and minor axes bisecting the module substrate. The oblique orientation allows for an improved opening between memory chips formed on the substrate so that the filling member may be properly formed between the module substrate and the memory chips to prevent voids where the filling member is not formed.
摘要:
An embodiment may comprise a test probe to measure electrical properties of a semiconductor package having ball-shaped terminals. The probe may include a signal tip and a ground tip. The signal tip may have a spherical lower surface allowing good contact with a ball-shaped signal terminal. The ground tip may be extended from a lower end of a ground barrel that encloses the signal tip. The ground tip may move independent of the signal tip by means of a barrel stopper and a spring. Thus, the probe can be used regardless of the size of and the distance between the package terminals.
摘要:
The present invention relates to a three-dimensional semiconductor module having at least one unit semiconductor device connected to the outer-facing side surfaces of a multi-side ground block. The unit semiconductor device has a structure in which a semiconductor package (or semiconductor chip) is mounted on a unit wiring substrate. Ground pads to be connected to the outer-facing side surfaces of the ground block are formed on the first surface of the unit wiring substrate, the semiconductor chip is mounted on the second surface opposite to the first surface, and contact terminals electrically connected to the semiconductor chip are formed on the second surface.
摘要:
A semiconductor package includes a substrate; and first and second semiconductor chips sequentially disposed on the substrate so that active surfaces of the first and second semiconductor chips face each other, wherein the first and second semiconductor chips are center pad-type semiconductor chips each having I/O pads arranged in two columns to be adjacent to a central line thereof, and I/O pads of the second semiconductor chip are electrically connected directly to the substrate without intersecting the central line of the second semiconductor chip.