Semiconductor device including semiconductor thin film, which is subjected to heat treatment to have alignment mark, crystallizing method for the semiconductor thin film, and crystallizing apparatus for the semiconductor thin film

发明授权

US08183122B2 Semiconductor device including semiconductor thin film, which is subjected to heat treatment to have alignment mark, crystallizing method for the semiconductor thin film, and crystallizing apparatus for the semiconductor thin film 有权

标题翻译：包含半导体薄膜的半导体薄膜，其经受热处理以具有对准标记，用于半导体薄膜的结晶方法和用于半导体薄膜的结晶装置

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专利标题： Semiconductor device including semiconductor thin film, which is subjected to heat treatment to have alignment mark, crystallizing method for the semiconductor thin film, and crystallizing apparatus for the semiconductor thin film
专利标题（中）： 包含半导体薄膜的半导体薄膜，其经受热处理以具有对准标记，用于半导体薄膜的结晶方法和用于半导体薄膜的结晶装置
申请号： US12838206

申请日： 2010-07-16
公开(公告)号： US08183122B2

公开(公告)日： 2012-05-22
发明人: Hiroyuki Ogawa , Noritaka Akita , Yukio Taniguchi , Masato Hiramatsu , Masayuki Jyumonji , Masakiyo Matsumura
申请人： Hiroyuki Ogawa , Noritaka Akita , Yukio Taniguchi , Masato Hiramatsu , Masayuki Jyumonji , Masakiyo Matsumura
申请人地址： JP Osaka
专利权人： Sharp Kabushiki Kaisha
当前专利权人： Sharp Kabushiki Kaisha
当前专利权人地址： JP Osaka
代理机构： Birch, Stewart, Kolasch & Birch, LLP
优先权： JP2004-232745 20040809; JP2004-232750 20040809
主分类号： H01L21/76
IPC分类号： H01L21/76

Semiconductor device including semiconductor thin film, which is subjected to heat treatment to have alignment mark, crystallizing method for the semiconductor thin film, and crystallizing apparatus for the semiconductor thin film

摘要：

Exact alignment of a recrystallized region, which is to be formed in an amorphous or polycrystalline film, is facilitated. An alignment mark is formed, which is usable in a step of forming an electronic device, such as a thin-film transistor, in the recrystallized region. In addition, in a step of obtaining a large-grain-sized crystal-phase semiconductor from a semiconductor film, a mark structure that is usable as an alignment mark in a subsequent step is formed on the semiconductor film in the same exposure step. Thus, the invention includes a light intensity modulation structure that modulates light and forms a light intensity distribution for crystallization, and a mark forming structure that modulates light and forms a light intensity distribution including a pattern with a predetermined shape, and also forms a mark indicative of a predetermined position on a crystallized region.

摘要（中）：

促进在非晶或多晶膜中形成的再结晶区域的精确取向。形成对准标记，其可用于在再结晶区域中形成诸如薄膜晶体管的电子器件的步骤。此外，在从半导体膜获得大晶粒尺寸的晶相半导体的步骤中，在相同的曝光步骤中，在半导体膜上形成可用作后续步骤中的对准标记的标记结构。因此，本发明包括调制光并形成用于结晶的光强度分布的光强调制结构，以及调制光并形成包括具有预定形状的图案的光强度分布的标记形成结构，并且还形成标记在结晶区域上的预定位置。

公开/授权文献

US20100304546A1 SEMICONDUCTOR DEVICE INCLUDING SEMICONDUCTOR THIN FILM, WHICH IS SUBJECTED TO HEAT TREATMENT TO HAVE ALIGNMENT MARK, CRYSTALLIZING METHOD FOR THE SEMICONDUCTOR THIN FILM, AND CRYSTALLIZING APPARATUS FOR THE SEMICONDUCTOR THIN FILM 公开/授权日：2010-12-02

信息查询

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/71	..限定在组H01L21／70中的器件的特殊部件的制造（H01L21/28，H01L21/44，H01L21/48优先）
H01L21/76	...组件间隔离区的制作