- 专利标题: Semiconductor light-emitting device
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申请号: US12873753申请日: 2010-09-01
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公开(公告)号: US08188510B2公开(公告)日: 2012-05-29
- 发明人: Taisuke Sato , Toshiyuki Oka , Koichi Tachibana , Shinya Nunoue , Kazufumi Shiozawa , Takayoshi Fujii
- 申请人: Taisuke Sato , Toshiyuki Oka , Koichi Tachibana , Shinya Nunoue , Kazufumi Shiozawa , Takayoshi Fujii
- 申请人地址: JP Tokyo
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Tokyo
- 代理机构: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权: JP2010-051040 20100308
- 主分类号: H01L33/26
- IPC分类号: H01L33/26
摘要:
According to one embodiment, a semiconductor light-emitting device having high light extraction efficiency is provided. The semiconductor light-emitting device includes a light transmissive substrate; a nitride semiconductor layer of a first conduction type formed on or above a top face side of the light transmissive substrate; an active layer made of nitride semiconductor formed on a top face of the nitride semiconductor layer of the first conduction type; a nitride semiconductor layer of a second conduction type formed on a top face of the active layer; a dielectric layer formed on a bottom face of the light transmissive substrate and having a refractive index lower than that of the light transmissive substrate; and a metal layer formed on a bottom face of the dielectric layer. And an interface between the light transmissive substrate and the dielectric layer is a uneven face, and an interface between the dielectric layer and the metal layer is a flat face.
公开/授权文献
- US08242532B2 Semiconductor light-emitting device 公开/授权日:2012-08-14