发明授权
US08189421B2 Table lookup voltage compensation for memory cells 有权
表查找存储单元的电压补偿

  • 专利标题: Table lookup voltage compensation for memory cells
  • 专利标题(中): 表查找存储单元的电压补偿
  • 申请号: US13107724
    申请日: 2011-05-13
  • 公开(公告)号: US08189421B2
    公开(公告)日: 2012-05-29
  • 发明人: Boon-Aik AngDerric J. H. Lewis
  • 申请人: Boon-Aik AngDerric J. H. Lewis
  • 申请人地址: US CA Sunnyvale
  • 专利权人: Spansion LLC
  • 当前专利权人: Spansion LLC
  • 当前专利权人地址: US CA Sunnyvale
  • 主分类号: G11C5/14
  • IPC分类号: G11C5/14
Table lookup voltage compensation for memory cells
摘要:
Systems and methods of regulating voltage at a memory cell are disclosed. An address for the memory cell is determined. Table lookups based on the address are performed. The table lookups yield voltage compensation parameters that can be used to set voltages on the terminals (e.g., source and drain) of the memory cell.
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