公开(公告)号：US08189421B2

公开(公告)日：2012-05-29

申请号：US13107724

申请日：2011-05-13

申请人： Boon-Aik Ang ,  Derric J. H. Lewis

发明人： Boon-Aik Ang ,  Derric J. H. Lewis

IPC分类号： G11C5/14

CPC分类号： G11C16/30 ,  G11C16/0458 ,  G11C16/0475

摘要： Systems and methods of regulating voltage at a memory cell are disclosed. An address for the memory cell is determined. Table lookups based on the address are performed. The table lookups yield voltage compensation parameters that can be used to set voltages on the terminals (e.g., source and drain) of the memory cell.

摘要翻译： 公开了一种在存储器单元上调节电压的系统和方法。 确定存储单元的地址。 执行基于地址的表查找。 表查找产生可用于设置存储器单元的端子（例如，源极和漏极）上的电压的电压补偿参数。

公开(公告)号：US08456941B2

公开(公告)日：2013-06-04

申请号：US13481582

申请日：2012-05-25

申请人： Boon-Aik Ang ,  Derric J. H. Lewis

发明人： Boon-Aik Ang ,  Derric J. H. Lewis

IPC分类号： G11C7/00

CPC分类号： G11C16/30 ,  G11C16/0458 ,  G11C16/0475

摘要： Systems and methods of regulating voltage at a memory cell are disclosed. An address for the memory cell is determined. Table lookups based on the address are performed. The table lookups yield voltage compensation parameters that can be used to set voltages on the terminals (e.g., source and drain) of the memory cell.

公开(公告)号：US07965574B2

公开(公告)日：2011-06-21

申请号：US12710153

申请日：2010-02-22

申请人： Boon-Aik Ang ,  Derric J. H. Lewis

发明人： Boon-Aik Ang ,  Derric J. H. Lewis

IPC分类号： G11C5/14

CPC分类号： G11C16/30 ,  G11C16/0458 ,  G11C16/0475

摘要： Systems and methods of regulating voltage at a memory cell are disclosed. An address for the memory cell is determined. Table lookups based on the address are performed. The table lookups yield voltage compensation parameters that can be used to set voltages on the terminals (e.g., source and drain) of the memory cell.

摘要翻译： 公开了一种在存储器单元上调节电压的系统和方法。 确定存储单元的地址。 执行基于地址的表查找。 表查找产生可用于设置存储器单元的端子（例如，源极和漏极）上的电压的电压补偿参数。

公开(公告)号：US07675805B2

公开(公告)日：2010-03-09

申请号：US12006744

申请日：2008-01-04

申请人： Boon-Aik Ang ,  Derric J. H. Lewis

发明人： Boon-Aik Ang ,  Derric J. H. Lewis

IPC分类号： G11C11/00

CPC分类号： G11C16/30 ,  G11C16/0458 ,  G11C16/0475

摘要： Systems and methods of regulating voltage at a memory cell are disclosed. An address for the memory cell is determined. Table lookups based on the address are performed. The table lookups yield voltage compensation parameters that can be used to set voltages on the terminals (e.g., source and drain) of the memory cell.

摘要翻译： 公开了一种在存储器单元上调节电压的系统和方法。 确定存储单元的地址。 执行基于地址的表查找。 表查找产生可用于设置存储器单元的端子（例如，源极和漏极）上的电压的电压补偿参数。