Invention Grant
US08198106B2 Dense array of field emitters using vertical ballasting structures
有权
使用垂直压载结构的致密阵列的场发射器
- Patent Title: Dense array of field emitters using vertical ballasting structures
- Patent Title (中): 使用垂直压载结构的致密阵列的场发射器
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Application No.: US12233859Application Date: 2008-09-19
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Publication No.: US08198106B2Publication Date: 2012-06-12
- Inventor: Akintunde I. Akinwande , Luis Fernando Velásquez-García
- Applicant: Akintunde I. Akinwande , Luis Fernando Velásquez-García
- Applicant Address: US MA Cambridge
- Assignee: Massachusetts Institute of Technology
- Current Assignee: Massachusetts Institute of Technology
- Current Assignee Address: US MA Cambridge
- Agency: Gesmer Updegrove LLP
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
A field emitter array structure is provided. The field emitter array structure includes a plurality of vertical un-gated transistor structures formed on a semiconductor substrate. The semiconductor substrate includes a plurality of vertical pillar structures to define said un-gated transistor structures. A plurality of emitter structures are formed on said vertical un-gated transistor structures. Each of said emitter structures is positioned in a ballasting fashion on one of said vertical un-gated transistor structures so as to allow said vertical ungated transistor structure to effectively provide high dynamic resistance with large saturation currents.
Public/Granted literature
- US20090072750A1 DENSE ARRAY OF FIELD EMITTERS USING VERTICAL BALLASTING STRUCTURES Public/Granted day:2009-03-19
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