Invention Grant
- Patent Title: Transistors with metal gate and methods for forming the same
- Patent Title (中): 具有金属栅极的晶体管及其形成方法
-
Application No.: US12343307Application Date: 2008-12-23
-
Publication No.: US08198685B2Publication Date: 2012-06-12
- Inventor: Chung-Shi Liu , Yung-Sheng Chiu , Cheng-Tung Lin , Chen-Hua Yu
- Applicant: Chung-Shi Liu , Yung-Sheng Chiu , Cheng-Tung Lin , Chen-Hua Yu
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Main IPC: H01L27/092
- IPC: H01L27/092 ; H01L21/28
Abstract:
A semiconductor device includes at least one first gate dielectric layer over a substrate. A first transition-metal oxycarbide (MCxOy) containing layer is formed over the at least one first gate dielectric layer, wherein the transition-metal (M) has an atomic percentage of about 40 at. % or more. A first gate is formed over the first transition-metal oxycarbide containing layer. At least one first doped region is formed within the substrate and adjacent to a sidewall of the first gate.
Public/Granted literature
- US20100155849A1 TRANSISTORS WITH METAL GATE AND METHODS FOR FORMING THE SAME Public/Granted day:2010-06-24
Information query
IPC分类:
